JP6704701B2 - 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 - Google Patents
密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 Download PDFInfo
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- JP6704701B2 JP6704701B2 JP2015187477A JP2015187477A JP6704701B2 JP 6704701 B2 JP6704701 B2 JP 6704701B2 JP 2015187477 A JP2015187477 A JP 2015187477A JP 2015187477 A JP2015187477 A JP 2015187477A JP 6704701 B2 JP6704701 B2 JP 6704701B2
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
- C08G75/02—Polythioethers
- C08G75/04—Polythioethers from mercapto compounds or metallic derivatives thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Medicinal Chemistry (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Micromachines (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104141150A TWI576403B (zh) | 2014-12-15 | 2015-12-08 | 黏著層組成物，形成黏著層和固化產物圖案的方法，及製造光學組件、電路板、壓印模和裝置組件的方法 |
| PCT/JP2015/006106 WO2016098314A1 (en) | 2014-12-15 | 2015-12-08 | Adhesion layer composition, methods for forming adhesion layer and cured product pattern, and methods for manufacturing optical component, circuit board, imprinting mold and device component |
| KR1020177018766A KR101952058B1 (ko) | 2014-12-15 | 2015-12-08 | 밀착층 조성물, 밀착층 및 경화물 패턴의 형성 방법, 광학 부품, 회로 기판, 임프린트용 몰드의 제조 방법, 및 디바이스 부품 |
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| JP2020040627A Division JP2020109858A (ja) | 2014-12-15 | 2020-03-10 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
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| JP2016115921A JP2016115921A (ja) | 2016-06-23 |
| JP6704701B2 true JP6704701B2 (ja) | 2020-06-03 |
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| JP2015187477A Active JP6704701B2 (ja) | 2014-12-15 | 2015-09-24 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
| JP2020040627A Pending JP2020109858A (ja) | 2014-12-15 | 2020-03-10 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
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| JP2020040627A Pending JP2020109858A (ja) | 2014-12-15 | 2020-03-10 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
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| JP2020109858A (ja) * | 2014-12-15 | 2020-07-16 | キヤノン株式会社 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
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| WO2018030351A1 (ja) * | 2016-08-10 | 2018-02-15 | 日産化学工業株式会社 | インプリント材料 |
| JP7011386B2 (ja) * | 2016-11-16 | 2022-01-26 | キヤノン株式会社 | 密着層形成組成物および物品製造方法 |
| WO2018159576A1 (ja) * | 2017-02-28 | 2018-09-07 | 富士フイルム株式会社 | プライマ層形成用組成物、キット、プライマ層および積層体 |
| WO2019065526A1 (ja) * | 2017-09-26 | 2019-04-04 | 富士フイルム株式会社 | インプリント用下層膜形成用組成物、キット、インプリント用硬化性組成物、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法 |
| KR102427691B1 (ko) * | 2017-10-31 | 2022-08-01 | 다우 글로벌 테크놀로지스 엘엘씨 | 광전지 봉지재 필름용 폴리올레핀 조성물 |
| TWI783115B (zh) | 2018-02-14 | 2022-11-11 | 日商富士軟片股份有限公司 | 試劑盒、壓印用下層膜形成組成物、圖案形成方法、半導體器件的製造方法 |
| JP7363681B2 (ja) | 2020-06-25 | 2023-10-18 | 株式会社デンソー | 電力変換器の制御回路 |
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| JP2009215179A (ja) * | 2008-03-07 | 2009-09-24 | Fujifilm Corp | （メタ）アクリレート化合物、これを用いた硬化性組成物、光ナノインプリント用組成物、並びにこれらの硬化性組成物の硬化物およびその製造方法 |
| JP2010024255A (ja) * | 2008-07-15 | 2010-02-04 | Nippon Synthetic Chem Ind Co Ltd:The | 活性エネルギー線硬化型樹脂組成物及びコーティング剤組成物 |
| JP5196489B2 (ja) * | 2009-02-09 | 2013-05-15 | 日油株式会社 | 金属パターンを有する基板の製造方法、およびその基板 |
| JP5546893B2 (ja) * | 2010-02-16 | 2014-07-09 | 東京エレクトロン株式会社 | インプリント方法 |
| KR20130071426A (ko) * | 2010-03-30 | 2013-06-28 | 호야 가부시키가이샤 | 임프린트용 이형층 부착 몰드 및 임프린트용 이형층 부착 몰드의 제조 방법, 카피 몰드의 제조 방법 |
| JP2011222732A (ja) * | 2010-04-09 | 2011-11-04 | Fujifilm Corp | パターン形成方法及びパターン基板製造方法 |
| KR20110125177A (ko) * | 2010-05-12 | 2011-11-18 | 후지필름 가부시키가이샤 | 광경화성 조성물 및 그것을 사용한 경화물의 제조 방법 |
| JP5647533B2 (ja) * | 2010-06-07 | 2014-12-24 | 昭和電工株式会社 | 安定化されたポリエン−ポリチオール系硬化性樹脂組成物 |
| WO2013047435A1 (ja) * | 2011-09-29 | 2013-04-04 | 日産化学工業株式会社 | 光硬化性樹脂組成物 |
| JP5767615B2 (ja) * | 2011-10-07 | 2015-08-19 | 富士フイルム株式会社 | インプリント用下層膜組成物およびこれを用いたパターン形成方法 |
| TWI471693B (zh) * | 2011-11-10 | 2015-02-01 | Canon Kk | 光可固化組成物，及使用彼之圖案化方法 |
| JP5891814B2 (ja) * | 2012-01-25 | 2016-03-23 | 大日本印刷株式会社 | パターン構造体の製造方法とこれに使用するパターン形成用基材 |
| TWI496859B (zh) * | 2012-11-01 | 2015-08-21 | Eternal Materials Co Ltd | 可光固化之框膠材料組合物 |
| JP2015071741A (ja) * | 2013-09-04 | 2015-04-16 | Jsr株式会社 | 硬化性組成物、ナノインプリント材料、硬化膜、積層体、硬化膜の製造方法、パターン形成方法及び半導体発光素子用基板 |
| JP6704701B2 (ja) * | 2014-12-15 | 2020-06-03 | キヤノン株式会社 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2020109858A (ja) * | 2014-12-15 | 2020-07-16 | キヤノン株式会社 | 密着層形成組成物、密着層の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法、およびデバイス部品 |
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| Publication number | Publication date |
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| KR101952058B1 (ko) | 2019-02-25 |
| KR20170095282A (ko) | 2017-08-22 |
| TWI576403B (zh) | 2017-04-01 |
| JP2016115921A (ja) | 2016-06-23 |
| TW201623526A (zh) | 2016-07-01 |
| JP2020109858A (ja) | 2020-07-16 |
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