JP6698438B2 - マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 - Google Patents
マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 Download PDFInfo
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- JP6698438B2 JP6698438B2 JP2016120602A JP2016120602A JP6698438B2 JP 6698438 B2 JP6698438 B2 JP 6698438B2 JP 2016120602 A JP2016120602 A JP 2016120602A JP 2016120602 A JP2016120602 A JP 2016120602A JP 6698438 B2 JP6698438 B2 JP 6698438B2
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- 230000010363 phase shift Effects 0.000 claims description 345
- 239000000758 substrate Substances 0.000 claims description 213
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 126
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 80
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- 239000001301 oxygen Substances 0.000 claims description 79
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 62
- 229910052782 aluminium Inorganic materials 0.000 claims description 62
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2016120602A JP6698438B2 (ja) | 2016-06-17 | 2016-06-17 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2016120602A JP6698438B2 (ja) | 2016-06-17 | 2016-06-17 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 |
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| Publication Number | Publication Date |
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| JP2017223890A JP2017223890A (ja) | 2017-12-21 |
| JP2017223890A5 JP2017223890A5 (enrdf_load_stackoverflow) | 2019-07-18 |
| JP6698438B2 true JP6698438B2 (ja) | 2020-05-27 |
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| KR102402742B1 (ko) | 2021-04-30 | 2022-05-26 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크 및 이를 이용한 포토마스크 |
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| SG11202007542WA (en) * | 2018-02-27 | 2020-09-29 | Hoya Corp | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
| CN111801618B (zh) * | 2018-03-14 | 2023-08-22 | Hoya株式会社 | 掩模坯料、相移掩模及半导体器件的制造方法 |
| US20220035235A1 (en) * | 2018-09-25 | 2022-02-03 | Hoya Corporation | Mask blank, transfer mask, and semiconductor-device manufacturing method |
| JP6756796B2 (ja) * | 2018-10-09 | 2020-09-16 | アルバック成膜株式会社 | マスクブランクス、ハーフトーンマスク、製造方法 |
| JP7491681B2 (ja) * | 2019-02-05 | 2024-05-28 | 株式会社トッパンフォトマスク | クロムブランクス、フォトマスクの製造方法、およびインプリントモールドの製造方法 |
| US20220179300A1 (en) * | 2019-03-07 | 2022-06-09 | Hoya Corporation | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP7313166B2 (ja) * | 2019-03-18 | 2023-07-24 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP7346527B2 (ja) * | 2021-11-25 | 2023-09-19 | Hoya株式会社 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法 |
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| JPH07134389A (ja) * | 1993-06-25 | 1995-05-23 | Hoya Corp | 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法 |
| JPH11184067A (ja) * | 1997-12-19 | 1999-07-09 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
| JP4340859B2 (ja) * | 2003-07-25 | 2009-10-07 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
| TWI329779B (en) * | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
| KR20050076827A (ko) * | 2004-01-22 | 2005-07-28 | 쇼오트 아게 | 초 고투과율 위상편이 마스크 블랭크 |
| JP2005208660A (ja) * | 2004-01-22 | 2005-08-04 | Schott Ag | 超高透過率の位相シフト型のマスクブランク |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP4490980B2 (ja) * | 2007-02-16 | 2010-06-30 | クリーンサアフェイス技術株式会社 | ハーフトーンブランクス |
| US8535855B2 (en) * | 2010-05-19 | 2013-09-17 | Hoya Corporation | Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask |
| JP6005530B2 (ja) * | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
| WO2015012151A1 (ja) * | 2013-07-22 | 2015-01-29 | Hoya株式会社 | 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP6573806B2 (ja) * | 2015-08-31 | 2019-09-11 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
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Cited By (1)
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