JP6691704B2 - 裏面照射型センサのための反射防止層 - Google Patents
裏面照射型センサのための反射防止層 Download PDFInfo
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- JP6691704B2 JP6691704B2 JP2016544609A JP2016544609A JP6691704B2 JP 6691704 B2 JP6691704 B2 JP 6691704B2 JP 2016544609 A JP2016544609 A JP 2016544609A JP 2016544609 A JP2016544609 A JP 2016544609A JP 6691704 B2 JP6691704 B2 JP 6691704B2
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- 238000000034 method Methods 0.000 claims description 55
- 229910052796 boron Inorganic materials 0.000 claims description 49
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 48
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 155
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- 229910052710 silicon Inorganic materials 0.000 description 37
- 239000010703 silicon Substances 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 239000000758 substrate Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 28
- 238000000231 atomic layer deposition Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000006117 anti-reflective coating Substances 0.000 description 16
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- 235000012239 silicon dioxide Nutrition 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
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- 238000005530 etching Methods 0.000 description 7
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Formation Of Insulating Films (AREA)
- Light Receiving Elements (AREA)
Description
Claims (2)
- 深紫外線(DUV)照射、真空紫外線(VUV)照射、極紫外線(EUV)照射及び荷電粒子の少なくとも1つを感知するためのイメージセンサであって、
第1の面に形成されている回路素子を含む半導体膜と、
前記半導体膜の第2の面に形成されている純ホウ素層と、
前記純ホウ素層に形成されている反射防止コーティングとを備え、
前記純ホウ素層の厚さが2nmと10nmとの間であり、
前記反射防止コーティングがアルミナを含み、
前記アルミナが16.5nmの厚さを有している、イメージセンサ。 - 前記アルミナがALD工程によって成膜されている、請求項1に記載のイメージセンサ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461926107P | 2014-01-10 | 2014-01-10 | |
US61/926,107 | 2014-01-10 | ||
US14/591,325 US9748294B2 (en) | 2014-01-10 | 2015-01-07 | Anti-reflection layer for back-illuminated sensor |
US14/591,325 | 2015-01-07 | ||
PCT/US2015/010672 WO2015147963A2 (en) | 2014-01-10 | 2015-01-08 | Anti-reflection layer for back-illuminated sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017509142A JP2017509142A (ja) | 2017-03-30 |
JP6691704B2 true JP6691704B2 (ja) | 2020-05-13 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016544609A Active JP6691704B2 (ja) | 2014-01-10 | 2015-01-08 | 裏面照射型センサのための反射防止層 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9748294B2 (ja) |
JP (1) | JP6691704B2 (ja) |
DE (1) | DE112015000383T5 (ja) |
TW (1) | TWI675463B (ja) |
WO (1) | WO2015147963A2 (ja) |
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US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
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JP6803137B2 (ja) * | 2015-09-30 | 2020-12-23 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像素子 |
JP6962906B2 (ja) * | 2016-03-03 | 2021-11-05 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
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US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
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JP2021044439A (ja) * | 2019-09-12 | 2021-03-18 | 浜松ホトニクス株式会社 | 裏面入射型撮像素子 |
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2015
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US20150200216A1 (en) | 2015-07-16 |
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