TW201532260A - 用於背照式感測器之防反射層 - Google Patents
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/144—Devices controlled by radiation
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Abstract
本發明揭示一種用於短波長光之影像感測器,其包含一半導體薄膜、形成於該半導體薄膜之一表面上之電路元件及處於該半導體薄膜之另一表面上之一純硼層。一防反射或保護層形成於該純硼層之頂部上。此影像感測器甚至在於高通量下連續使用多年的情況下仍具有高效率及良好穩定性。可使用電荷耦合裝置(CCD)或互補金屬氧化物半導體(CMOS)技術製造該影像感測器。該影像感測器可係二維區域感測器或一維陣列感測器。
Description
本申請案主張2014年1月10日申請之標題為「Anti-Reflection Layer For Back-Illuminated Sensor」的美國臨時專利申請案第61/926,107號之優先權,且該案以引用的方式併入本文。
本申請案係關於2009年6月1日由Brown申請、現放棄之標題為「Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems」的美國專利申請案第12/476,190號。
本申請案係關於適用於感測深UV(DUV)及真空UV(VUV)波長中之輻射的影像感測器,且係關於用於製造此等影像感測器之方法。此等感測器適用於光罩、主光罩或晶圓檢驗系統中且適用於其他應用中。
積體電路產業需要具有越來越高之解析度的檢驗工具來解析積體電路、光罩、主光罩、太陽能電池、電荷耦合裝置等等之越來越小的特徵,以及偵測大小係該等特徵大小等級或小於該等特徵大小的缺陷。
在諸多情況下,在短波長(例如,短於大約250nm之波長)下操作之檢驗系統可提供此解析度。特定言之,針對光罩或主光罩檢驗,需
使用與將用於微影術之波長相同或接近該波長(即接近用於當代微影術之193.4nm及接近用於未來EUV微影術之13.5nm)的一波長檢驗,此係因為由圖案化造成之檢驗光的相移將與在微影術期間造成之相移相同或非常相似。為檢驗半導體圖案化晶圓,在一相對較廣之波長範圍(諸如包含處於近UV、DUV及/或VUV範圍中之波長的一波長範圍)內操作的檢驗系統可係有利的,此係因為一較廣之波長範圍可降低對層厚或圖案尺寸之較小改變的靈敏度,在一個別波長下,該等改變可造成反射率之較大改變。
為偵測光罩、主光罩及半導體晶圓上之較小缺陷或粒子,需要較高之信雜比。需要高光子通量密度以保證高速檢驗時之高信雜比,此係因為所偵測之光子數目之統計波動(泊松雜訊(Poisson noise))係對信雜比之一基本限制。在諸多情況下,每一像素需要大約100,000或更多個光子。因為檢驗系統通常每天24小時運行且僅停止較短時間,所以在操作僅若干個月之後感測器即曝露於大劑量輻射。
具有250nm之一真空波長的一光子具有大約5eV之能量。二氧化矽之帶隙係大約10eV。儘管二氧化矽看起來似乎不能吸收此等波長光子,然如生長於一矽表面上般二氧化矽必須在與矽之界面上具有相同的懸鍵,此係因為二氧化矽結構不可完全匹配矽晶體之結構。此外,因為單一二氧化物係非晶形,所以在材料內亦可能存在相同懸鍵。實際上,在氧化物內及在與下層半導體之界面上將存在一不可忽略的缺陷及雜質密度,該等缺陷及雜質可吸收具有DUV波長之光子,特定言之波長短於250nm之光子。此外,在高輻射通量密度下,兩個高能光子可在一非常短之時間間隔(奈秒或皮秒)內抵達近相同位置,此可導致藉由兩個快速連續吸收事件或雙光子吸收將電子激發至二氧化矽之傳導帶。
對於用於檢驗、計量及相關應用之感測器之一進一步要求係高
靈敏度。如上文所說明,需要高信雜比。若感測器不將較大一部分入射光子轉換為信號,則將需要一強度較高之光源以維持與具有一更有效之感測器的一檢驗或計量系統相同之檢驗或量測速度。一強度較高之光源將使正在檢驗或量測之儀器光學裝置及樣本曝露於較高光強度下,久而久之可能造成損壞或劣化。一強度較高之光源亦將更昂貴,或特定言之在DUV及VUV波長下的強度較高之光源可能不可得。矽反射一較高百分比之入射於其上之DUV及VUV光。例如,波長接近193nm,在其表面上具有一2nm氧化物層(諸如一原生氧化物層)之矽反射大約65%之入射於其上的光。針對接近193nm之波長,在矽表面上生長大約21nm之一氧化物層將反射率減小至接近40%。具有40%之反射率的一偵測器明顯比具有65%之反射率的一偵測器更有效,但是需要更低之反射率及因此更高之效率。
防反射塗層通常用於光學元件(諸如透鏡及反射鏡)上。然而通常用於光學元件之諸多塗層材料及製程通常與基於矽之感測器不相容。例如,電子及離子輔助沈積技術通常用於光學塗層。此等塗層製程一般而言不可用以塗覆半導體裝置,此係因為電子或離子可在半導體裝置之表面上沈積足夠電荷以造成電崩潰,從而導致對製造於半導體上之電路的損壞。
DUV及VUV波長被矽大量吸收。此等波長可基本上被吸收於矽表面之大約10nm或數十奈米內。在DUV或VUV波長下操作之一感測器之效率取決於在電子重新組合之前可收集多大部分由所吸收光子所產生的電子。二氧化矽可與具有一低缺陷密度之矽形成一高品質界面。大部分包含諸多通常用於防反射塗層之材料之其他材料若直接沈積在矽上,則導致矽表面上之電缺陷密度非常高。矽表面上之一高電缺陷密度對於預期在可見波長下操作之一感測器而言可能不係一問題,因為此等波長在被吸收之前通常可行進大約100nm或更多至矽
中,且因此可幾乎不受矽表面上之電缺陷影響。然而過於接近矽表面吸收DUV及VUV波長使得表面上之電缺陷及/或表面上之(多個)層內的捕獲電荷可導致所產生的相當大部分之電子於或接近矽表面處重新組合且消失,從而導致一低效感測器。
因此,需要一種能夠有效偵測高能光子同時克服一些或全部上述缺點之影像感測器。
描述製造用於使DUV及/或VUV成像之具有高量子效率的影像感測器之方法。根據此等方法製造之影像感測器能夠在高通量DUV及VUV輻射下長期操作。此等方法包含在一半導體(較佳係矽)晶圓上之一層中形成光敏主動及/或被動電路元件的製程步驟。
製造一影像感測器之一例示性方法包含:在一基板上形成一磊晶層;在磊晶層上形成一閘極層,該閘極層包括一或多個介電材料(諸如二氧化矽及氮化矽)層;在包括多晶矽及介電材料之閘極層上形成電路元件,但無金屬膜或金屬互連件;薄化基板以曝露磊晶層之至少一部分(該曝露磊晶層在本文中被稱作一半導體薄膜)且曝露磊晶層之至少多個部分;直接在磊晶層之曝露部分上形成一純硼層;及直接在該硼層之表面上形成一或多個防反射層。如本文所使用,片語「電路元件」指代光敏裝置(諸如電荷耦合裝置及光二極體)、其他半導體裝置(諸如電晶體、二極體、電阻器及電容器)及其等之間的電互連件(通常稱作互連件)。在此第一例示性實施例中,在硼沈積之前形成之電路元件不包含任何金屬互連件。使用包含但不限於光微影術、沈積、蝕刻、離子植入及退火之標準半導體製程形成此等電路元件。可使用化學蝕刻及/或拋光執行薄化樣本(例如一晶圓)。值得注意的係,此薄化可增加影像感測器對照射背表面之光的靈敏度。在硼層上形成一防反射塗層。此防反射塗層可包括一或多個材料層。可使用一原子
層沈積(ALD)技術沈積該等層之至少一者。此防反射塗層增加至影像感測器中之至少一相關波長的傳輸。在一實施例中,在薄化基板之後且在形成硼層之前可摻雜磊晶層之至少一曝露部分。在已於背表面上沈積硼及防反射層之後,可完成前表面上之電路,包含形成金屬互連件。
製造一影像感測器之另一方法包含在一基板上形成一磊晶層,接著在磊晶層上形成電路元件。此步驟可包含形成金屬互連件。一處置晶圓或一保護層可形成於電路元件上。接著薄化基板以曝露磊晶層之至少部分。如上文所指示,此薄化可增加影像感測器對照射於背表面上之光的靈敏度。在薄化製程中曝露之磊晶層的表面上形成一純硼層。在硼層上形成一防反射塗層。此防反射塗層增加至影像感測器中之至少一相關波長的傳輸。此防反射塗層可包括一或多個材料層。可使用一原子層沈積(ALD)技術沈積該等層之至少一者。
用於DUV及/或VUV輻射之具有高量子效率及長操作壽命的影像感測器。自背側薄化此等影像感測器使得其等對照射於影像感測器(其中此等影像感測器係背照式)之背側上之輻射高度靈敏。直接在磊晶層之背表面上沈積一薄(例如,厚度介於大約2nm與大約20nm之間)高純度非晶硼層。在一些實施例中,可將一或多個額外材料層塗覆於硼上。可選擇各層之厚度及材料以增加至影像感測器中之相關一波長的傳輸。
可使用電荷耦合裝置(CCD)或互補金屬氧化物半導體(CMOS)技術製造本文所描述之影像感測器。影像感測器可係二維區域感測器或一維陣列感測器。
100‧‧‧技術/方法
101‧‧‧步驟
103‧‧‧步驟
105‧‧‧步驟
107‧‧‧步驟
109‧‧‧步驟
111‧‧‧步驟
112‧‧‧步驟
113‧‧‧步驟
115‧‧‧步驟
117‧‧‧步驟
200‧‧‧技術/方法
201‧‧‧步驟
203‧‧‧步驟
205‧‧‧步驟
207‧‧‧步驟
209‧‧‧步驟
211‧‧‧步驟
212‧‧‧步驟
213‧‧‧步驟
215‧‧‧步驟
301‧‧‧p+基板
301A‧‧‧薄化基板
302‧‧‧磊晶(epi)層
303‧‧‧閘極氧化物層
303A‧‧‧摻雜層
304‧‧‧氮化矽(Si3N4)閘極層
305‧‧‧前側電路元件
305A‧‧‧保護層
306‧‧‧硼層
307‧‧‧前側金屬/互連件
308‧‧‧防反射層
401‧‧‧基板
402‧‧‧磊晶(epi)層
402A‧‧‧埋藏氧化物層
402B‧‧‧經蝕刻氧化物
403‧‧‧電路元件
403A‧‧‧矽穿孔(TSV)
404‧‧‧處置晶圓
406‧‧‧純硼層
407‧‧‧金屬墊
408‧‧‧防反射層
500‧‧‧偵測器總成
502‧‧‧矽中介層
504‧‧‧影像感測器/光敏感測器/光敏陣列感測器
506‧‧‧驅動器電路
508‧‧‧轉換電路/數化器/驅動器電路/數化器電路
510‧‧‧基板
512‧‧‧互連件
516‧‧‧焊球
圖1圖解說明製造一影像感測器之一例示性方法。
圖2圖解說明用於製造一影像感測器之一替代例示性技術。
圖3A至圖3G圖解說明經受參考圖1所描述之方法之一晶圓的例示性橫截面。
圖4A至圖4H圖解說明經受參考圖2所描述之方法之一晶圓的例示性橫截面。
圖5圖解說明併入一影像感測器、一矽中介層及其他電子裝置之一例示性偵測器總成。
圖1圖解說明用於製造一影像感測器之一例示性技術100。在步驟101中,可使用標準半導體處理步驟(諸如微影術、沈積、離子植入、退火及蝕刻)產生電路元件。亦可在步驟101期間產生CCD及/或CMOS感測器元件及裝置。此等電路元件係產生在晶圓之前表面上之一磊晶層中且因此亦被稱作前側電路元件。在較佳實施例中,磊晶(epi)層之厚度係大約10μm至40μm。在較佳實施例中,epi層及基板兩者皆摻雜有p型摻雜劑(諸如硼),但epi層(在下文及圖式中被稱作p-摻雜)具有比塊狀晶圓(在下文及圖式中被稱作p+摻雜)更低之一摻雜劑濃度。通常,磊晶層電阻將係大約10Ω cm至100Ω cm,且基板電阻將小於大約0.01Ω cm。儘管可在步驟101中形成多晶矽互連件,然一般而言不在此步驟中形成金屬互連件,此係因為在後續高溫處理步驟中將損壞金屬。
在步驟103中,可自背側薄化主動感測器區域或甚至整個晶圓。此薄化通常包含拋光及蝕刻之一組合以曝露epi層。在一實施例中,自背側拋光晶圓直至晶圓之厚度係大約200μm至300μm為止。接著,使用一材料(諸如光阻或其他合適之材料)保護圍繞主動感測器區域之前表面及框架區域。此時,使用一化學蝕刻劑以蝕除主動感測器區域上之塊狀晶圓,藉此曝露主動感測器區域。因為塊狀晶圓具有比epi層更高之一摻雜劑濃度及缺陷密度,所以塊狀半導體材料之蝕刻
速率比epi層之蝕刻速率更高。當到達epi層時減緩蝕刻處理,藉此導致一厚度均勻之薄膜區域。在另一實施例中,影像感測器晶圓接合至可由石英、矽、藍寶石或其他材料製成之一處置晶圓。接著,一拋光處理用以拋光整個晶圓直至僅剩epi層為止。
在步驟105中,可在前側表面上沈積一保護層以在步驟107至步驟111期間保護前側電路元件。特定言之,必須保護前側表面上之任何所曝露之矽或多晶矽,因為硼趨於優先沈積在矽上。在一些實施例中,可在步驟103之前執行步驟105使得保護層可在背面薄化處理(步驟103)期間為前側表面提供額外保護。在一些實施例中,保護層可包括(例如)使用電漿增強型CVD沈積所沈積之氮化矽層。
在步驟107中,可清潔且準備背側表面用於硼沈積。在此清潔期間,應自背側表面移除原生氧化物及任何污染物,包含有機物及金屬。在一較佳實施例中,可使用一稀釋HF溶液或一RCA清潔製程(此係為人熟知的一組步驟,包含移除有機污染物、薄氧化物層及離子污染物)執行清潔。在清潔之後且在準備期間,較佳地使用馬蘭哥尼(Marangoni)乾燥技術(基於表面張力之乾燥技術)或一相似技術乾燥晶圓以使表面乾燥且無水痕。在較佳實施例中,在步驟107至步驟109中(使用,例如乾燥氮)將晶圓保護在一經控制大氣中以最小化原生氧化物之重新生長。
在步驟109中,可使晶圓保持在一高溫還原環境(諸如一稀釋氮氣或一低壓氫氣)中持續若干分鐘。在較佳實施例中,可使晶圓保持在大約800℃至850℃之一溫度下持續大約1至4分鐘。此高溫可移除可能在步驟107之後重新生長之任何原生氧化物層。
在步驟111中,在背側表面之背側上沈積一非晶純硼層。在一較佳實施例中,可在大約650℃至800℃之一溫度下使用二硼烷及氫氣之一混合物執行此沈積以產生一高純度非晶硼層。硼層之厚度取決於感
測器之預期應用。通常,硼層厚度係介於大約2nm與20nm之間。較佳地,硼層厚度係介於大約3nm與10nm之間。最小厚度一般而言受限於對一無釘扎均勻膜之需要。最大厚度一般而言取決於硼對相關波長的吸收。注意,可在相同製程工具且較佳地在相同製程腔室中執行步驟109及111,藉此保證可快速連續執行步驟109及111且在步驟之間不可能有表面污染或氧化物生長。可在J.Electron.Material,2010年,第39卷,第162至173頁中之Sarubbi等人的「Chemical vapor deposition of a-boron layers on silicon for controlled nanometer-deep p+-n junction formation」中見到硼沈積之更多細節,該文章以引用的方式併入本文。
硼層中釘扎孔之純度及缺乏對於本文所揭示之影像感測器的靈敏度及壽命而言較為關鍵。若在硼沈積之前不自epi層移除任何原生氧化物膜,則該原生氧化物將受DUV、VUV或其他高能光子影響且可造成感測器隨著使用性能衰減。即使在硼沈積之前移除全部原生氧化物,若在硼層中存在釘扎孔,則在處理之後,氧化物仍將可透過此等釘扎孔到達epi層且可氧化該層之表面。
在步驟112中,在步驟111期間或緊接步驟111,將其他層安置於硼層之頂部上。此等其他層可包含由一或多個材料(諸如二氧化矽、氮化矽、氧化鋁、二氧化鉿、氟化鎂及氟化鋰)組成之防反射塗層。可使用ALD沈積此等其他層之一或多者。使用一ALD製程用於沈積防反射層之一優點在於ALD製程通常允許非常精確地(單一單層)控制(多個)所沈積之層的厚度。較佳地,針對短波長(諸如DUV及VUV波長)之防反射層較薄(諸如厚度介於大約10nm與20nm之間)。控制一或兩個原子層之層厚(零點幾奈米)之優點在於反射率(且因此靈敏度)在不同感測器之間維持一致。即使DUV、VUV或其他輻射可影響防反射塗層,在防反射塗層與epi層之間存在硼層仍使epi層屏蔽防反射塗層
中之電荷及陷阱且保證影像感測器之靈敏度不顯著降低。在一替代實施例中,可在步驟115與117之間執行步驟112。當涉及沈積防反射塗層之全部製程步驟使用低於大約450℃之溫度時,可在其等上已形成有金屬互連件之晶圓或感測器上沈積防反射塗層。使用ALD用於沈積包括防反射塗層之一層或多個層之另一優點在於ALD製程通常涉及遠低於450℃之溫度。
在步驟113中,可移除或圖案化前側保護層以準備在前表面上製造互連件。在一些實施例中,此移除/圖案化可包含在稀釋HF中蝕刻前側表面,此係因為硼層相對不受稀釋HF影響。
在步驟115中,可圖案化且製造前表面上之互連件。可由Al、Cu或另一金屬形成此等互連件。在完成互連件製造之後,可在前側表面上沈積一鈍化層以保護此等互連件。
在步驟117中,可封裝已完成的電路元件。封裝可包含覆晶接合或導線接合一晶片至一基板。封裝可包含傳輸相關波長的一窗,或可包括用於至一真空密封件之界面的一凸緣或密封件。
圖2圖解說明用於製造一影像感測器之一替代例示性技術200。在此實施例中,可在步驟201中使用標準半導體處理步驟(包含微影術、沈積、離子植入、退火及蝕刻)產生電路元件。在一實施例中,亦可在步驟201中產生CCD及/或CMOS感測器元件及裝置。在晶圓之前側表面上之一epi層中產生此等電路元件。在較佳實施例中,epi層之厚度係大約10μm至40μm。epi層具有一低摻雜劑濃度(p-)。在一實施例中,亦可在步驟201中產生互連件,諸如金屬互連件。
在步驟203中,可保護晶圓之前側表面。此保護可包含在於步驟201期間形成之電路元件之頂部上沈積一或多個保護層。此保護亦可或反之包含將晶圓附著至一處置晶圓,諸如一矽晶圓、一石英晶圓或由其他材料製成之一晶圓。
步驟205涉及自背側薄化晶圓以至少曝露主動感測器區域中之磊晶層。此步驟可涉及拋光、蝕刻或兩者。在一些實施例中,背面薄化整個晶圓。在其他實施例中,僅薄化主動感測器區域直至磊晶層。
步驟207包含在硼沈積之前清潔且準備背側表面。在此清潔期間,應自背側表面移除原生氧化物或任何污染物,包含有機物及金屬。在一實施例中,可使用一稀釋HF溶液或使用一RCA清潔製程執行此清潔。在清潔之後且在準備期間,可使用馬蘭哥尼乾燥技術或一相似技術乾燥晶圓以使表面乾燥且無水痕。
在步驟209中,可在一保護性環境中將晶圓輸送至一沈積工具,藉此允許在步驟211期間保護晶圓。在一實施例中,(例如)保護性環境係一乾燥氮氛圍,此最小化原生氧化物之重新生長。應使執行步驟209所花費之時間保持在一最小值,較佳不超過五分鐘。
在步驟211中,在晶圓之背側表面上沈積硼。在一較佳實施例中,可在大約400℃至450℃之一溫度下使用二硼烷及氫氣之一混合物完成此沈積,藉此產生一高純度非晶硼層。所沈積之硼層的厚度取決於感測器之預期應用。通常,硼層厚度將係介於大約3nm與10nm之間。最小厚度由對一無釘扎孔均勻膜之需要設定,然而最大厚度取決於硼對相關光子或帶電粒子之吸收,及當在前側上存在金屬互連件時可使晶圓保持於高溫之最大時間長度。
在步驟212中,可在硼層上沈積其他層。此等其他層包含由一或多個材料(諸如二氧化矽、氮化矽、氧化鋁、二氧化鉿、氟化鎂及氟化鋰)組成之防反射塗層。可使用一ALD製程沈積此等其他層之一或多者。如上文所說明,使用一ALD製程用於沈積針對DUV或VUV波長之一防反射層之一優點係可非常精確地控制層厚。此外,在圖2中所圖解說明之實施例中,因為存在金屬互連件,所以較佳係沈積製程不使用大於450℃之溫度。使用ADL用於沈積之另一優點在於大部分
ALD製程使用遠低於450℃之溫度。
在一實施例中,可在步驟213中移除保護性前側層。在另一實施例中,在步驟213中,可在保護性前側層中打開電洞或通孔或可曝露圍繞裝置邊緣之矽穿孔,藉此允許連接至電路構造。
在步驟215中,可將所得之構造封包於一合適封裝中。封包步驟可包括覆晶接合或導線接合裝置至基板。封裝可包含傳輸相關波長的一窗,或可包括用於至一真空密封件之界面的一凸緣或密封件。
圖3A至圖3F圖解說明經受方法100(圖1)之一晶圓的例示性橫截面。圖3A圖解說明一磊晶(epi)層302形成於一基板301之前側上。在一實施例中,基板301係一p+(即高度p摻雜)基板,且epi層302係一p-epi層(即,具有一低p摻雜劑濃度之一層)。圖3B圖解說明一閘極氧化物層303形成於epi層302上、一氮化矽(Si3N4)閘極層304形成於閘極氧化物層303上及前側電路元件305形成於閘極層304上(步驟101)。注意,取決於影像感測器技術之類型,閘極介電質可包括一、二或三層。形成前側電路元件包含植入或摻雜epi層之前側之部分且可涉及圖案化閘極層。圖3C圖解說明基板301在其背側表面,至少在某些區域中薄化以形成薄化基板301A,該薄化基板301A組合epi層302形成一半導體薄膜(步驟103),且圖解說明一保護層305A形成於前側電路元件305上(步驟105)。圖3D圖解說明可形成於epi層302由薄化基板301A曝露之一部分中的一選用摻雜層303A。可藉由離子植入、隨後藉由熱活化、藉由電漿摻雜、藉由電漿輔助摻雜或相似技術而形成此摻雜。在一實施例中,可在步驟107期間作為背側表面準備之部分且在步驟109中之高溫表面處理之前執行此摻雜。圖3E圖解說明一純硼層306形成於薄化基板301A及所曝露之epi層302上(步驟111)。因為一些硼向epi層中擴散若干奈米,所以一些實施例不需要包含單獨摻雜之層303A。圖3F圖解說明在移除或打開保護層305A(步驟113)之後,
可在前側電路元件305上形成前側金屬(即互連件)307。圖3G圖解說明在硼層306上形成一或多個防反射層308。可在步驟111(沈積硼層)之後之任意時間,但在步驟117(封裝)之前形成防反射層308。使用一ALD製程沈積該等防反射層之至少一者。如上文所說明,使用一ALD製程用於沈積DUV及VUV防反射層之優點包含厚度控制精確及低處理溫度(通常遠低於450℃)。
圖4A至圖4G圖解說明經受方法200(圖2)之一晶圓的例示性橫截面。圖4A圖解說明一磊晶(epi)層402形成於一基板401之前側上。在一實施例中,基板401係一p+基板,且epi層402係一p- epi層。在一實施例中,基板係一絕緣體上矽(SOI)晶圓,其中一埋藏氧化物層402A介於基板401與epi層402之間。SOI晶圓可商業上購自Soitec(法國,貝爾南)及其他供應商。在其他實施例中,直接在基板401上生長epi層而無任何埋藏氧化物層402A。圖4B圖解說明可形成於epi層上之包含互連件之各種電路元件403(步驟201)(注意,展示但未標記epi層以不使附圖過度複雜)。因為在背面薄化直至epi層之前於晶圓上形成互連件,所以可使用正常亞微米CMOS處理技術形成此等互連件且此等互連件可包含多層高密度金屬互連件。在一些實施例中,圍繞影像感測器陣列之一或多個邊緣產生多個矽穿孔(TSV)403A以允許連接至電路元件403。圖4C圖解說明一處置晶圓404附著至電路元件403之頂部(步驟203)。注意,展示但不標記矽穿孔以不使附圖過度複雜。在其他實施例中,可使用一保護層替代處置晶圓404。圖4D圖解說明在背面薄化基板401至其上形成有電路元件403之epi層(此情況下係形成半導體薄膜)之後的晶圓。在一實施例中,此背面薄化曝露埋藏氧化物層402A。圖4E圖解說明在背側表面之一清潔及準備(步驟207)之後的晶圓,其可導致圖案化經蝕刻氧化物402B以保護TSV 403A同時曝露影像感測器陣列區域中之epi層。圖4F圖解說明在形成於epi層401之背側
表面上(步驟211)之後的一純硼層406。圖4G圖解說明在純硼層406之頂部上沈積之一或多個防反射層408。使用一ALD製程沈積該等防反射層之至少一者。如上文所說明,ALD之優點包含處理溫度低及所沈積之材料的(多個)厚度控制精確。圖4H圖解說明在移除經蝕刻氧化物402B及任何上覆防反射層且使用金屬墊407替換以允許電連接至TSV403A(步驟213)之後的晶圓。
在上文所描述之實施例之任一者中,(多個)防反射層可具有經選擇以最大化至矽感測器中之(多個)相關波長的傳輸之一厚度(或多個厚度)。當防反射層之吸收不明顯時,至矽中之最大傳輸對應於最小反射率。例如,針對預期於接近193nm之波長下操作之一感測器,可選擇(多個)防反射層之(多個)厚度以最大化接近193nm之波長的傳輸。針對DUV波長,非晶礬土(氧化鋁)可為矽上之薄(<10nm)硼層形成一有效防反射塗層。礬土適用於藉由ALD進行沈積。一薄硼層(諸如一厚度係2至3nm之硼層)上厚度係大約16.5nm之的一礬土塗層導致針對近法向入射在接近193nm之波長下小於10%之一反射率最小值。因為在接近193nm之波長下,一薄礬土層具有可忽略的吸收,此反射率最小值對應於至感測器中之最大傳輸。相較於其他沈積技術,用於沈積此類防反射層之一ALD製程之一優點在於ALD製程一般而言不需要高能離子或電子用於沈積且因此使損壞靈敏半導體電路之風險較小。另一優點在於使用ALD製程厚度控制(大約一單層)可係非常精確。因為針對DUV及VUV波長之防反射層需較薄(諸如在上文實例中係16.5nm),所以精確厚度控制導致自一感測器至另一感測器且跨一感測器之整個光敏區域一致性較佳。
在一些實施例中,防反射塗層可包括一個以上層。特定言之,當感測器想要在一波長範圍內操作時,或當可得塗層材料不個別給予如所要般之一低反射率時,一多層防反射塗層可給予比一單層塗層更
佳之效能。例如,若針對接近193nm之一波長,使用氮化矽塗層替代礬土塗層,則9nm之一單層塗層在接近193nm下將給予大約0.8%之反射率之一反射率最小值。然而,因為氮化矽吸收DUV光,所以9nm之氮化物塗層中193nm之光傳輸至矽中之部分實際上比16.5nm之礬土塗層更少(大約53%比大約58%)。即使9nm之塗層中之反射率略高(大約1.5%對大約0.8%),減少氮化矽塗層厚度至大約8nm仍可將至矽中之傳輸改良大約0.5%。在矽感測器上之2至3nm硼上之一大約5nm氮化矽層的頂部上包括一大約17nm氟化鎂層之一兩層塗層可將193nm之光至矽中的傳輸改良大約56%,其接近一單層礬土塗層可達成之大約58%。此僅係額外塗層層如何可允許不夠理想的材料對相關波長至一感測器中之傳輸作出顯著改良之一實例。因為兩個層皆較薄,所以ALD製程可有利地用以沈積兩個層以精確控制厚度。
上文實例並非意在限制本文所揭示之本發明之範疇。其等僅意為可如何使用可得材料針對一或多個相關波長選擇適當防反射塗層的圖解說明。針對DUV波長之大部分材料之反射率不準確地為人所知,且針對不同沈積條件,一材料之反射率可不同,例如,如同材料之密度可隨沈積條件之改變而改變。由於材料之實際反射率不同於假設用於計算的值,針對上文實例之最佳防反射塗層層厚可不同於上文的值。應充分瞭解如何計算薄膜之反射率及吸收。一旦已知材料在一或多個給定波長下之反射率,一適當技術即可計算針對該一或多個給定波長之適當塗層厚度。
氟化鎂及氟化鈣係對於VUV及DUV波長而言尤其有用之材料,此係因為其等不大量吸收分別長於大約115nm及125nm之波長。礬土對於DUV及一些VUV波長而言亦有用。SiO2對於長於大約130nm之波長而言可有用。氮化矽及二氧化鉿係可在DUV光譜上之較長波長端上有用之指數較高的材料之實例,其中其等之吸收較弱,但由於在VUV
波長上相對較強之吸收,其等在該等波長上並不如此有用。
圖5圖解說明根據本發明之某些實施例之併入一影像感測器504、一矽中介層502及其他電子裝置的一例示性偵測器總成500。
在本發明之一態樣中,偵測器總成500可包含安置於一中介層502之表面上之一或多個光敏感測器504。在一些實施例中,總成500之一或多個中介層502可包含但不限於一矽中介層。在本發明之一進一步態樣中,如上文所描述,總成500之一或多個光敏感測器504經背面薄化且進一步經組態用於包含安置於背表面上之一硼層及一或多個防反射層的背照。
在本發明之另一態樣中,總成500之各種電路元件可安置於或建置於中介層502中。在一實施例中,一或多個放大電路(例如,電荷轉換放大器)(未展示)可安置於或建置於中介層502中。在另一實施例中,一或多個轉換電路508(例如,類比轉數位轉換電路,即數化器508)可安置於或建造於中介層502中。在另一實施例中,一或多個驅動器電路506可安置於或建造於中介層502中。例如,一或多個驅動器電路506可包含一時序/串列驅動電路。例如,一或多個驅動器電路506可包含但不限於時脈驅動器電路或重設驅動器電路。在另一實施例中,一或多個解耦電容器(未展示)可安置於或建造於中介層502中。在一進一步實施例中,一或多個串列發射器(未在圖5中展示)可安置於或建造於中介層502中。
在本發明之另一態樣中,一或多個支撐結構可安置於光敏陣列感測器504之底面與中介層502之頂面之間以向感測器504提供實體支撐。在一實施例中,複數個焊球516可安置於光敏陣列感測器504之底面與中介層502之頂面之間以向感測器504提供實體支撐。在本文中應認知,儘管感測器504之成像區域可能不包含外部電連接,然背面薄化感測器504造成感測器504變得越來越具撓性。如此,可利用焊球
516以依加固感測器504之成像部分之方式將感測器504連接至中介層502。在一替代實施例中,一側填滿材料可安置於光敏陣列感測器504之底面與中介層502之頂面之間以向感測器504提供實體支撐。例如,環氧樹脂可安置於光敏陣列感測器504之底面與中介層502之頂面之間。
在本發明之另一態樣中,中介層502及各種額外電路(例如,放大電路、驅動器電路506、數化器電路508及類似物)安置於一基板510之一表面上。在一進一步態樣中,基板510包含具有高導熱率之一基板(例如,陶瓷基板)。就此而言,基板510經組態以向感測器504/中介層502總成提供實體支撐,同時亦為總成500提供一構件以有效將熱量自成像感測器504及各種其他電路(例如,數化器506、驅動器電路508、放大器及類似物)傳走。在本文中應認知,基板可包含此項技術中已知的任何剛性高導熱基板材料。例如,基板510可包含但不限於一陶瓷基板。例如,基板510可包含但不限於氮化鋁。
在另一實施例中,基板510可經組態以提供至一插座或一下層印刷電路板(PCB)之一界面。例如,如在圖5中所展示,基板510可經由互連件512提供中介層502與一插座或一PCB之間之互連。熟習此項技術者將認知,基板510可操作地耦合至一下層PCB且進一步以各種方式電耦合至一插座或PCB,其等全部被解釋為處在本發明之範疇內。
上文所描述之本發明之結構及方法的各項實施例僅闡釋本發明之原理且非旨在限制本發明之範疇於所描述的特定實施例。例如,可添加額外步驟至圖1及圖2中所描繪之流程圖,或可以與所展示不同之序列完成所展示之該等步驟中的一些。因此,僅由下列申請專利範圍及其等之等效物限制本發明。
100‧‧‧技術/方法
101‧‧‧步驟
103‧‧‧步驟
105‧‧‧步驟
107‧‧‧步驟
109‧‧‧步驟
111‧‧‧步驟
112‧‧‧步驟
113‧‧‧步驟
115‧‧‧步驟
117‧‧‧步驟
Claims (20)
- 一種用於感測深紫外(DUV)輻射、真空紫外(VUV)輻射、極紫外(EUV)輻射及帶電粒子之至少一者的影像感測器,該影像感測器包括:一半導體薄膜,其包含形成於該半導體薄膜之一第一表面上之電路元件;一純硼層,其形成於該半導體薄膜之一第二表面上;及一防反射塗層,其形成於該純硼層之表面上,其中使用一原子層沈積(ALD)製程形成該防反射塗層之至少部分。
- 如請求項1之影像感測器,其中該半導體薄膜包括厚度介於大約10μm與大約40μm之間的一磊晶層。
- 如請求項2之影像感測器,其進一步包含形成於該薄膜之該第二表面中之一摻雜層。
- 如請求項1之影像感測器,其中該純硼層之厚度係介於2nm與20nm之間。
- 如請求項1之影像感測器,其中該防反射塗層包括兩個或更多個不同材料層。
- 如請求項1之影像感測器,其中該防反射塗層包括由該ALD製程沈積之礬土。
- 如請求項1之影像感測器,其進一步包括附著至該等電路元件之一處置晶圓。
- 如請求項1之影像感測器,其進一步包括形成於該等電路元件上之一保護層。
- 如請求項4之影像感測器,其中該影像感測器包括一電荷耦合裝置(CCD)或一CMOS裝置。
- 一種用於感測深紫外(DUV)輻射、真空紫外(VUV)輻射、極紫外(EUV)輻射及帶電粒子之至少一者的影像感測器,該影像感測器包括:一半導體基板薄膜,其包含形成於其之一第一表面上之電路元件;一純硼層,其形成於該半導體基板之一第二表面上;及一防反射塗層,其形成於該純硼層上。
- 如請求項10之影像感測器,其中該純硼層之厚度係介於2nm與20nm之間,且其中該防反射塗層包括礬土。
- 如請求項11之影像感測器,其中該純硼層之厚度係介於3nm與10nm之間,且其中該礬土具有大約16.5nm之一厚度。
- 如請求項11之影像感測器,其中藉由一ALD製程沈積該礬土。
- 一種製造一影像感測器之方法,該方法包括:在一基板上形成一磊晶層;在該基板上形成一閘極層;在該閘極層上形成一電路元件層;薄化該基板以產生一薄化基板,該薄化基板曝露該磊晶層之至少部分;在該磊晶層之該等曝露部分上形成一純硼層;及在該純硼層之該表面上形成一防反射塗層,其中形成該防反射塗層包含一原子層沈積(ALD)製程。
- 如請求項14之方法,其中該防反射塗層包括至少兩個不同材料層。
- 如請求項14之方法,其中該防反射塗層包括礬土。
- 如請求項14之方法,其進一步包括在薄化該基板之後且在形成該純硼層之前摻雜該磊晶層的至少一曝露部分。
- 一種製造一影像感測器之方法,該方法包括:在一基板上形成一磊晶層;在該磊晶層上形成電路元件;附著一處置晶圓至該等電路元件;薄化該基板以曝露該磊晶層;及在該磊晶層之該曝露表面上形成一純硼層;及在該純硼層之該表面上形成一防反射塗層,其中形成該防反射塗層包含一原子層沈積(ALD)製程。
- 如請求項18之方法,其中該防反射塗層包括至少兩個不同材料層。
- 如請求項18之方法,其中該防反射塗層包括礬土。
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