JP6691636B2 - スパッタリング装置用のカソードユニット - Google Patents
スパッタリング装置用のカソードユニット Download PDFInfo
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- JP6691636B2 JP6691636B2 JP2019508976A JP2019508976A JP6691636B2 JP 6691636 B2 JP6691636 B2 JP 6691636B2 JP 2019508976 A JP2019508976 A JP 2019508976A JP 2019508976 A JP2019508976 A JP 2019508976A JP 6691636 B2 JP6691636 B2 JP 6691636B2
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- 238000004544 sputter deposition Methods 0.000 title claims description 23
- 230000007935 neutral effect Effects 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (3)
- ターゲットを備えて真空チャンバに取り付けられるスパッタリング装置用のカソードユニットにおいて、
真空チャンバの外壁に取り付けられる支持フレームと、
支持フレームで支持されて真空チャンバに対して近接離間可能に進退する環状の可動ベースと、
可動ベースの内方空間をターゲットのスパッタ面に平行にのびるように当該可動ベースで軸支された回転軸体と、
回転軸体の軸線方向をX軸方向、X軸方向に直交する可動ベースの進退方向をZ軸方向とし、回転軸体にその径方向に向けて突設され、その先端面にターゲットが着脱自在に取り付けられる少なくとも1個のターゲットホルダと、
真空チャンバの外壁面からZ軸方向に所定間隔離した支持フレームの部分に設けられる、開閉扉を有する予備チャンバであって真空チャンバと独立して真空排気自在であるものと、
可動ベースと予備チャンバとの間及び可動ベースと真空チャンバとの間に設けられてターゲットホルダを囲繞する一対の真空ベローズとを備え、
ターゲットホルダがZ軸上に位置し且つターゲットが真空チャンバ側を向く姿勢で真空チャンバに対しZ軸方向に近接移動させた可動ベースの成膜位置では真空チャンバに形成した第1開口の周縁部に密接してターゲットが存する真空チャンバ内を隔絶すると共に、ターゲットが予備チャンバ側を向く姿勢で真空チャンバに対しZ軸方向に離間移動させた可動ベースの交換位置では予備チャンバに形成した第2開口の周縁部に密接してターゲットが存する予備チャンバ内を隔絶する隔絶部がターゲットホルダに設けられ、隔絶部が第1開口と第2開口とから離れた可動ベースの中立位置で回転軸体をX軸回りに回転する回転機構を更に備えることを特徴とするスパッタリング装置用のカソードユニット。 - 前記回転軸体に、同一線上で相反する方向に夫々のびるように前記ターゲットホルダを2個設けたことを特徴とする請求項1記載のスパッタリング装置用のカソードユニット。
- 前記ターゲットホルダ内に、ターゲット表面に漏洩磁場を作用させる磁石ユニットと、この磁石ユニットをZ軸回りに回転駆動する駆動手段とを内蔵したことを特徴とする請求項1または請求項2記載のスパッタリング装置用のカソードユニット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017143364 | 2017-07-25 | ||
JP2017143364 | 2017-07-25 | ||
PCT/JP2018/008619 WO2019021519A1 (ja) | 2017-07-25 | 2018-03-06 | スパッタリング装置用のカソードユニット |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019021519A1 JPWO2019021519A1 (ja) | 2019-07-25 |
JP6691636B2 true JP6691636B2 (ja) | 2020-04-28 |
Family
ID=65040060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019508976A Active JP6691636B2 (ja) | 2017-07-25 | 2018-03-06 | スパッタリング装置用のカソードユニット |
Country Status (6)
Country | Link |
---|---|
US (1) | US10844474B2 (ja) |
JP (1) | JP6691636B2 (ja) |
KR (1) | KR102170483B1 (ja) |
CN (1) | CN109844168B (ja) |
SG (1) | SG11201901359PA (ja) |
WO (1) | WO2019021519A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7212167B2 (ja) * | 2019-07-22 | 2023-01-24 | 株式会社アルバック | 真空処理装置 |
CN111605864B (zh) * | 2020-05-19 | 2023-06-09 | 国科中子医疗科技有限公司 | 一种可隔绝外界气氛的存储装置及其隔绝保护方法 |
JP2022045769A (ja) * | 2020-09-09 | 2022-03-22 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及びプログラム |
KR20220044122A (ko) * | 2020-09-30 | 2022-04-06 | 시바우라 메카트로닉스 가부시끼가이샤 | 성막 장치 |
CN113445013B (zh) * | 2021-06-28 | 2022-06-03 | 哈尔滨工业大学 | 旋翼轴承内圈内壁高功率磁控溅射薄膜沉积装置及方法 |
CN117070909B (zh) * | 2023-09-26 | 2024-02-20 | 河北海阳顺达节能玻璃有限公司 | 一种用于生产高硼硅玻璃的磁控溅射镀膜设备及方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128976U (ja) * | 1982-02-17 | 1983-09-01 | ティーディーケイ株式会社 | スパツタ装置 |
JPS6210270A (ja) * | 1985-07-05 | 1987-01-19 | Fujitsu Ltd | スパツタ装置 |
US5292419A (en) * | 1990-12-20 | 1994-03-08 | Leybold Aktiengesellschaft | Sputtering unit |
JP4036928B2 (ja) * | 1996-09-18 | 2008-01-23 | 松下電器産業株式会社 | 成膜装置とそのターゲット交換方法 |
CN100543176C (zh) * | 2006-10-14 | 2009-09-23 | 中国科学院合肥物质科学研究院 | 用于超高真空系统的磁控溅射阴极靶 |
JP5898523B2 (ja) * | 2012-02-20 | 2016-04-06 | スタンレー電気株式会社 | 真空処理装置および真空処理装置を用いた物品の製造方法 |
JP6007070B2 (ja) | 2012-11-06 | 2016-10-12 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
US9418823B2 (en) * | 2013-03-01 | 2016-08-16 | Sputtering Components, Inc. | Sputtering apparatus |
CN205803585U (zh) * | 2016-07-25 | 2016-12-14 | 昆山迅立光电设备有限公司 | 磁控溅射阴极座的磁场移动调节装置及真空镀膜设备 |
-
2018
- 2018-03-06 SG SG11201901359PA patent/SG11201901359PA/en unknown
- 2018-03-06 CN CN201880003956.3A patent/CN109844168B/zh active Active
- 2018-03-06 JP JP2019508976A patent/JP6691636B2/ja active Active
- 2018-03-06 KR KR1020197016957A patent/KR102170483B1/ko active IP Right Grant
- 2018-03-06 US US16/326,760 patent/US10844474B2/en active Active
- 2018-03-06 WO PCT/JP2018/008619 patent/WO2019021519A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JPWO2019021519A1 (ja) | 2019-07-25 |
SG11201901359PA (en) | 2019-03-28 |
KR20190077549A (ko) | 2019-07-03 |
CN109844168A (zh) | 2019-06-04 |
US10844474B2 (en) | 2020-11-24 |
KR102170483B1 (ko) | 2020-10-28 |
CN109844168B (zh) | 2020-12-08 |
WO2019021519A1 (ja) | 2019-01-31 |
US20190194798A1 (en) | 2019-06-27 |
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