JP7212167B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP7212167B2 JP7212167B2 JP2021534530A JP2021534530A JP7212167B2 JP 7212167 B2 JP7212167 B2 JP 7212167B2 JP 2021534530 A JP2021534530 A JP 2021534530A JP 2021534530 A JP2021534530 A JP 2021534530A JP 7212167 B2 JP7212167 B2 JP 7212167B2
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- 238000012545 processing Methods 0.000 title claims description 118
- 239000000758 substrate Substances 0.000 claims description 27
- 238000004891 communication Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 description 21
- 238000012546 transfer Methods 0.000 description 14
- 238000012423 maintenance Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (2)
- 被処理基板の処理面に対して所定の真空処理を施す真空処理装置であって、
被処理基板が設置され、処理面が向く方向を上方として上壁に処理面を臨む取付開口が形成された真空チャンバと、真空処理を施すための処理ユニットと、真空チャンバと処理ユニットとの間に介設される所定長さの連通管とを備え、真空雰囲気の真空チャンバ内の被処理基板に対して連通管を通して所定の真空処理を施すように構成したものにおいて、
処理ユニットに、上下方向に直交してのびる回転軸回りに揺動する回動アームが連結され、真空チャンバと連通管とを、または、処理ユニットと連通管とを選択的に係合する係合手段を更に備え、処理ユニットを、または、係合された処理ユニットと連通管とを回動アームの長さに応じた距離だけ真空チャンバから離間させ、
前記回動アームにより前記真空チャンバに向けて前記処理ユニットを揺動させる方向を揺動方向先方とし、この揺動方向先方側に位置させて前記真空チャンバと前記連通管とのいずれか一方に半球状の突起を設けると共に、前記真空チャンバと前記連通管とのいずれか他方に突起を受け入れる受入凹部が形成されることを特徴とする真空処理装置。 - 前記係合手段は、前記処理ユニット、前記真空チャンバ及び前記連通管の外面に夫々突設され、前記真空チャンバに前記連通管を介して処理ユニットを組付けた状態にて、上下方向で互いに対面する締結ブロックと、互いに対面する各締結ブロックを締結する締結部材とで構成されることを特徴とする請求項1記載の真空処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019134821 | 2019-07-22 | ||
JP2019134821 | 2019-07-22 | ||
PCT/JP2020/010586 WO2021014675A1 (ja) | 2019-07-22 | 2020-03-11 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021014675A1 JPWO2021014675A1 (ja) | 2021-12-23 |
JP7212167B2 true JP7212167B2 (ja) | 2023-01-24 |
Family
ID=74192685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021534530A Active JP7212167B2 (ja) | 2019-07-22 | 2020-03-11 | 真空処理装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11891685B2 (ja) |
EP (1) | EP4006195A4 (ja) |
JP (1) | JP7212167B2 (ja) |
KR (1) | KR102623402B1 (ja) |
CN (1) | CN113994021B (ja) |
TW (1) | TWI831953B (ja) |
WO (1) | WO2021014675A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060071384A1 (en) | 2004-10-06 | 2006-04-06 | Advanced Display Process Engineering Co. Ltd. | Apparatus for manufacturing flat-panel display |
CN2830419Y (zh) | 2005-07-06 | 2006-10-25 | 中国电子科技集团公司第四十八研究所 | 分体式金属有机物化学气相淀积反应器 |
JP2011253842A (ja) | 2010-05-31 | 2011-12-15 | Tokyo Electron Ltd | 蓋体保持治具 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3650697T2 (de) * | 1985-10-24 | 1999-04-15 | Texas Instruments Inc., Dallas, Tex. | Wafertransferarm und Wafertransfermethode |
JP3122617B2 (ja) | 1996-07-19 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH11140648A (ja) * | 1997-11-07 | 1999-05-25 | Tokyo Electron Ltd | プロセスチャンバ装置及び処理装置 |
US6776848B2 (en) * | 2002-01-17 | 2004-08-17 | Applied Materials, Inc. | Motorized chamber lid |
US7097744B2 (en) * | 2003-06-12 | 2006-08-29 | Applied Materials, Inc. | Method and apparatus for controlling darkspace gap in a chamber |
TWI267917B (en) * | 2004-02-24 | 2006-12-01 | Advanced Display Proc Eng Co | Apparatus for manufacturing flat-panel display |
JP4246654B2 (ja) * | 2004-03-08 | 2009-04-02 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP2010162611A (ja) | 2009-01-13 | 2010-07-29 | Ulvac Japan Ltd | 相対ティーチング方法 |
JP6960737B2 (ja) * | 2017-01-23 | 2021-11-05 | 株式会社日立ハイテク | 真空処理装置 |
US10844474B2 (en) * | 2017-07-25 | 2020-11-24 | Ulvac, Inc. | Cathode unit for sputtering apparatus |
KR102273512B1 (ko) * | 2017-09-07 | 2021-07-06 | 가부시키가이샤 알박 | 스퍼터링 장치 |
-
2020
- 2020-03-11 CN CN202080042799.4A patent/CN113994021B/zh active Active
- 2020-03-11 US US17/433,140 patent/US11891685B2/en active Active
- 2020-03-11 JP JP2021534530A patent/JP7212167B2/ja active Active
- 2020-03-11 EP EP20842937.3A patent/EP4006195A4/en not_active Withdrawn
- 2020-03-11 WO PCT/JP2020/010586 patent/WO2021014675A1/ja unknown
- 2020-03-11 KR KR1020217037321A patent/KR102623402B1/ko active IP Right Grant
- 2020-03-23 TW TW109109560A patent/TWI831953B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060071384A1 (en) | 2004-10-06 | 2006-04-06 | Advanced Display Process Engineering Co. Ltd. | Apparatus for manufacturing flat-panel display |
CN2830419Y (zh) | 2005-07-06 | 2006-10-25 | 中国电子科技集团公司第四十八研究所 | 分体式金属有机物化学气相淀积反应器 |
JP2011253842A (ja) | 2010-05-31 | 2011-12-15 | Tokyo Electron Ltd | 蓋体保持治具 |
Also Published As
Publication number | Publication date |
---|---|
CN113994021A (zh) | 2022-01-28 |
US20220154324A1 (en) | 2022-05-19 |
TW202113111A (zh) | 2021-04-01 |
TWI831953B (zh) | 2024-02-11 |
EP4006195A4 (en) | 2023-07-12 |
KR102623402B1 (ko) | 2024-01-11 |
WO2021014675A1 (ja) | 2021-01-28 |
EP4006195A1 (en) | 2022-06-01 |
CN113994021B (zh) | 2023-12-01 |
JPWO2021014675A1 (ja) | 2021-12-23 |
KR20210153105A (ko) | 2021-12-16 |
US11891685B2 (en) | 2024-02-06 |
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