JP6689817B2 - 互いに光学的に分離された領域を有するイメージセンサを含む光電子モジュール - Google Patents

互いに光学的に分離された領域を有するイメージセンサを含む光電子モジュール Download PDF

Info

Publication number
JP6689817B2
JP6689817B2 JP2017503988A JP2017503988A JP6689817B2 JP 6689817 B2 JP6689817 B2 JP 6689817B2 JP 2017503988 A JP2017503988 A JP 2017503988A JP 2017503988 A JP2017503988 A JP 2017503988A JP 6689817 B2 JP6689817 B2 JP 6689817B2
Authority
JP
Japan
Prior art keywords
image sensor
sensor chip
adhesive
region
epoxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017503988A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017523612A (ja
JP2017523612A5 (https=
Inventor
グプサー，シモン
ハンゼルマン，ソンヤ
ユィ，チーチュアン
カルセナ，クリス
ウー，グオ・シオン
ラドマン，ハルトムート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Sensors Singapore Pte Ltd
Original Assignee
Heptagon Micro Optics Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagon Micro Optics Pte Ltd filed Critical Heptagon Micro Optics Pte Ltd
Publication of JP2017523612A publication Critical patent/JP2017523612A/ja
Publication of JP2017523612A5 publication Critical patent/JP2017523612A5/ja
Application granted granted Critical
Publication of JP6689817B2 publication Critical patent/JP6689817B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
JP2017503988A 2014-07-25 2015-07-22 互いに光学的に分離された領域を有するイメージセンサを含む光電子モジュール Active JP6689817B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201462028893P 2014-07-25 2014-07-25
US62/028,893 2014-07-25
US201462053294P 2014-09-22 2014-09-22
US62/053,294 2014-09-22
US201562156416P 2015-05-04 2015-05-04
US62/156,416 2015-05-04
PCT/SG2015/050224 WO2016013977A1 (en) 2014-07-25 2015-07-22 Optoelectronic modules including an image sensor having regions optically separated from one another

Publications (3)

Publication Number Publication Date
JP2017523612A JP2017523612A (ja) 2017-08-17
JP2017523612A5 JP2017523612A5 (https=) 2018-08-30
JP6689817B2 true JP6689817B2 (ja) 2020-04-28

Family

ID=55163393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017503988A Active JP6689817B2 (ja) 2014-07-25 2015-07-22 互いに光学的に分離された領域を有するイメージセンサを含む光電子モジュール

Country Status (8)

Country Link
US (1) US10199412B2 (https=)
EP (1) EP3172767B1 (https=)
JP (1) JP6689817B2 (https=)
KR (1) KR102455919B1 (https=)
CN (1) CN106575660B (https=)
SG (1) SG11201700235QA (https=)
TW (1) TWI685126B (https=)
WO (1) WO2016013977A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109155258B (zh) 2016-04-08 2022-04-26 赫普塔冈微光有限公司 具有孔径的薄光电模块及其制造
CN114137672A (zh) * 2016-04-15 2022-03-04 赫普塔冈微光有限公司 具有对准间隔件的光电子模块和用于组装所述光电子模块的方法
CN107786784B (zh) * 2016-08-29 2020-06-30 光宝电子(广州)有限公司 镜头组件及其制作方法
JP6620176B2 (ja) * 2018-01-29 2019-12-11 アオイ電子株式会社 半導体装置
US12169315B2 (en) 2018-03-07 2024-12-17 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules and wafer-level methods for manufacturing the same
EP3620813A1 (en) * 2018-09-04 2020-03-11 ams AG Optical sensor arrangement, device and method of manufacturing an optical sensor arrangement
CN111463293B (zh) * 2019-01-17 2022-05-17 光宝光电(常州)有限公司 支架结构、光传感器结构及制造光传感器结构的方法
CN114339000B (zh) * 2021-12-31 2024-04-23 昆山丘钛微电子科技股份有限公司 一种摄像头模组及制备方法
WO2025012223A1 (en) * 2023-07-10 2025-01-16 Sensibel As Optical readout module

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3880278B2 (ja) * 2000-03-10 2007-02-14 オリンパス株式会社 固体撮像装置及びその製造方法
TW513558B (en) 2000-10-27 2002-12-11 Fuji Electric Co Ltd Range finder for automatic focusing
JP2002350129A (ja) 2001-05-23 2002-12-04 Canon Inc 計測装置
JP4016275B2 (ja) 2003-06-25 2007-12-05 富士電機デバイステクノロジー株式会社 測距装置
EP1812968B1 (en) * 2004-08-25 2019-01-16 Callahan Cellular L.L.C. Apparatus for multiple camera devices and method of operating same
JP2007110588A (ja) * 2005-10-17 2007-04-26 Funai Electric Co Ltd 複眼撮像装置
JP4492533B2 (ja) * 2005-12-27 2010-06-30 船井電機株式会社 複眼撮像装置
KR100809277B1 (ko) 2006-07-05 2008-03-03 삼성전기주식회사 어레이 렌즈를 갖는 카메라 모듈
JP2010021283A (ja) * 2008-07-09 2010-01-28 Panasonic Corp 固体撮像装置およびその製造方法
TWM363080U (en) * 2009-01-21 2009-08-11 Pixart Imaging Inc Packaging structure
DE102010041937A1 (de) 2010-10-04 2012-04-05 Robert Bosch Gmbh Optische Abschirm-Vorrichtung zum Trennen von optischen Pfaden
JP5857399B2 (ja) 2010-11-12 2016-02-10 ソニー株式会社 固体撮像装置及び電子機器
CN103620779B (zh) 2011-07-19 2016-12-28 赫普塔冈微光有限公司 光电模块及其制造方法
US8492181B2 (en) * 2011-12-22 2013-07-23 Stmicroelectronics Pte Ltd. Embedded wafer level optical package structure and manufacturing method
US8772898B2 (en) 2012-02-09 2014-07-08 Omnivision Technologies, Inc. Lateral light shield in backside illuminated imaging sensors
US9627572B2 (en) * 2012-04-25 2017-04-18 Kyocera Corporation Light receiving and emitting element module and sensor device using same
CN103839840B (zh) 2012-11-22 2016-12-21 光宝新加坡有限公司 感应器单元的制造方法
US9543354B2 (en) * 2013-07-30 2017-01-10 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
US9094593B2 (en) * 2013-07-30 2015-07-28 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules

Also Published As

Publication number Publication date
TWI685126B (zh) 2020-02-11
SG11201700235QA (en) 2017-02-27
US10199412B2 (en) 2019-02-05
KR20170036020A (ko) 2017-03-31
JP2017523612A (ja) 2017-08-17
KR102455919B1 (ko) 2022-10-17
TW201611319A (zh) 2016-03-16
US20170229505A1 (en) 2017-08-10
WO2016013977A1 (en) 2016-01-28
EP3172767A4 (en) 2018-06-27
CN106575660A (zh) 2017-04-19
CN106575660B (zh) 2019-07-09
EP3172767A1 (en) 2017-05-31
EP3172767B1 (en) 2022-01-05

Similar Documents

Publication Publication Date Title
JP6689817B2 (ja) 互いに光学的に分離された領域を有するイメージセンサを含む光電子モジュール
TWI735538B (zh) 具備配有用於容納一光學組件之開口之雙重囊封的光電模組
CN105493282B (zh) 具有减少漏光或杂散光的屏蔽的光电模块以及用于此类模块的制造方法
US10193026B2 (en) Partial spacers for wafer-level fabricated modules
JP6151354B2 (ja) ウエハスタックの組立
TW201511218A (zh) 小型光電模組及其製造方法
JP2017531310A (ja) シリコン基板を有する光電子モジュールおよびそのようなモジュールの作製方法
EP3341974B1 (en) Optical assemblies including a spacer adhering directly to a substrate
JP2017523612A5 (https=)
EP3374815B1 (en) Optical element stack assemblies
TW201626021A (zh) 光學元件堆疊組件
TWI713173B (zh) 具有流體可滲透通道的光電模組及其製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180720

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180720

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191023

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200317

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200408

R150 Certificate of patent or registration of utility model

Ref document number: 6689817

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250