SG11201700235QA - Optoelectronic modules including an image sensor having regions optically separated from one another - Google Patents
Optoelectronic modules including an image sensor having regions optically separated from one anotherInfo
- Publication number
- SG11201700235QA SG11201700235QA SG11201700235QA SG11201700235QA SG11201700235QA SG 11201700235Q A SG11201700235Q A SG 11201700235QA SG 11201700235Q A SG11201700235Q A SG 11201700235QA SG 11201700235Q A SG11201700235Q A SG 11201700235QA SG 11201700235Q A SG11201700235Q A SG 11201700235QA
- Authority
- SG
- Singapore
- Prior art keywords
- another
- image sensor
- modules including
- optically separated
- optoelectronic modules
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462028893P | 2014-07-25 | 2014-07-25 | |
| US201462053294P | 2014-09-22 | 2014-09-22 | |
| US201562156416P | 2015-05-04 | 2015-05-04 | |
| PCT/SG2015/050224 WO2016013977A1 (en) | 2014-07-25 | 2015-07-22 | Optoelectronic modules including an image sensor having regions optically separated from one another |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201700235QA true SG11201700235QA (en) | 2017-02-27 |
Family
ID=55163393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201700235QA SG11201700235QA (en) | 2014-07-25 | 2015-07-22 | Optoelectronic modules including an image sensor having regions optically separated from one another |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10199412B2 (https=) |
| EP (1) | EP3172767B1 (https=) |
| JP (1) | JP6689817B2 (https=) |
| KR (1) | KR102455919B1 (https=) |
| CN (1) | CN106575660B (https=) |
| SG (1) | SG11201700235QA (https=) |
| TW (1) | TWI685126B (https=) |
| WO (1) | WO2016013977A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109155258B (zh) | 2016-04-08 | 2022-04-26 | 赫普塔冈微光有限公司 | 具有孔径的薄光电模块及其制造 |
| CN114137672A (zh) * | 2016-04-15 | 2022-03-04 | 赫普塔冈微光有限公司 | 具有对准间隔件的光电子模块和用于组装所述光电子模块的方法 |
| CN107786784B (zh) * | 2016-08-29 | 2020-06-30 | 光宝电子(广州)有限公司 | 镜头组件及其制作方法 |
| JP6620176B2 (ja) * | 2018-01-29 | 2019-12-11 | アオイ電子株式会社 | 半導体装置 |
| US12169315B2 (en) | 2018-03-07 | 2024-12-17 | Ams Sensors Singapore Pte. Ltd. | Optoelectronic modules and wafer-level methods for manufacturing the same |
| EP3620813A1 (en) * | 2018-09-04 | 2020-03-11 | ams AG | Optical sensor arrangement, device and method of manufacturing an optical sensor arrangement |
| CN111463293B (zh) * | 2019-01-17 | 2022-05-17 | 光宝光电(常州)有限公司 | 支架结构、光传感器结构及制造光传感器结构的方法 |
| CN114339000B (zh) * | 2021-12-31 | 2024-04-23 | 昆山丘钛微电子科技股份有限公司 | 一种摄像头模组及制备方法 |
| WO2025012223A1 (en) * | 2023-07-10 | 2025-01-16 | Sensibel As | Optical readout module |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3880278B2 (ja) * | 2000-03-10 | 2007-02-14 | オリンパス株式会社 | 固体撮像装置及びその製造方法 |
| TW513558B (en) | 2000-10-27 | 2002-12-11 | Fuji Electric Co Ltd | Range finder for automatic focusing |
| JP2002350129A (ja) | 2001-05-23 | 2002-12-04 | Canon Inc | 計測装置 |
| JP4016275B2 (ja) | 2003-06-25 | 2007-12-05 | 富士電機デバイステクノロジー株式会社 | 測距装置 |
| EP1812968B1 (en) * | 2004-08-25 | 2019-01-16 | Callahan Cellular L.L.C. | Apparatus for multiple camera devices and method of operating same |
| JP2007110588A (ja) * | 2005-10-17 | 2007-04-26 | Funai Electric Co Ltd | 複眼撮像装置 |
| JP4492533B2 (ja) * | 2005-12-27 | 2010-06-30 | 船井電機株式会社 | 複眼撮像装置 |
| KR100809277B1 (ko) | 2006-07-05 | 2008-03-03 | 삼성전기주식회사 | 어레이 렌즈를 갖는 카메라 모듈 |
| JP2010021283A (ja) * | 2008-07-09 | 2010-01-28 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| TWM363080U (en) * | 2009-01-21 | 2009-08-11 | Pixart Imaging Inc | Packaging structure |
| DE102010041937A1 (de) | 2010-10-04 | 2012-04-05 | Robert Bosch Gmbh | Optische Abschirm-Vorrichtung zum Trennen von optischen Pfaden |
| JP5857399B2 (ja) | 2010-11-12 | 2016-02-10 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| CN103620779B (zh) | 2011-07-19 | 2016-12-28 | 赫普塔冈微光有限公司 | 光电模块及其制造方法 |
| US8492181B2 (en) * | 2011-12-22 | 2013-07-23 | Stmicroelectronics Pte Ltd. | Embedded wafer level optical package structure and manufacturing method |
| US8772898B2 (en) | 2012-02-09 | 2014-07-08 | Omnivision Technologies, Inc. | Lateral light shield in backside illuminated imaging sensors |
| US9627572B2 (en) * | 2012-04-25 | 2017-04-18 | Kyocera Corporation | Light receiving and emitting element module and sensor device using same |
| CN103839840B (zh) | 2012-11-22 | 2016-12-21 | 光宝新加坡有限公司 | 感应器单元的制造方法 |
| US9543354B2 (en) * | 2013-07-30 | 2017-01-10 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
| US9094593B2 (en) * | 2013-07-30 | 2015-07-28 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
-
2015
- 2015-07-22 JP JP2017503988A patent/JP6689817B2/ja active Active
- 2015-07-22 CN CN201580044781.7A patent/CN106575660B/zh active Active
- 2015-07-22 EP EP15824918.5A patent/EP3172767B1/en active Active
- 2015-07-22 KR KR1020177005060A patent/KR102455919B1/ko active Active
- 2015-07-22 SG SG11201700235QA patent/SG11201700235QA/en unknown
- 2015-07-22 WO PCT/SG2015/050224 patent/WO2016013977A1/en not_active Ceased
- 2015-07-22 US US15/329,112 patent/US10199412B2/en active Active
- 2015-07-24 TW TW104124161A patent/TWI685126B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI685126B (zh) | 2020-02-11 |
| JP6689817B2 (ja) | 2020-04-28 |
| US10199412B2 (en) | 2019-02-05 |
| KR20170036020A (ko) | 2017-03-31 |
| JP2017523612A (ja) | 2017-08-17 |
| KR102455919B1 (ko) | 2022-10-17 |
| TW201611319A (zh) | 2016-03-16 |
| US20170229505A1 (en) | 2017-08-10 |
| WO2016013977A1 (en) | 2016-01-28 |
| EP3172767A4 (en) | 2018-06-27 |
| CN106575660A (zh) | 2017-04-19 |
| CN106575660B (zh) | 2019-07-09 |
| EP3172767A1 (en) | 2017-05-31 |
| EP3172767B1 (en) | 2022-01-05 |
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