TWI685126B - 包括具有光學上彼此分離之區域之影像感測器之光電模組 - Google Patents

包括具有光學上彼此分離之區域之影像感測器之光電模組 Download PDF

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TWI685126B
TWI685126B TW104124161A TW104124161A TWI685126B TW I685126 B TWI685126 B TW I685126B TW 104124161 A TW104124161 A TW 104124161A TW 104124161 A TW104124161 A TW 104124161A TW I685126 B TWI685126 B TW I685126B
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image sensor
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TW104124161A
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TW201611319A (zh
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賽門 古柏瑟
孫雅 韓塞爾曼
齊權 余
克里斯 卡瑟娜
國雄 吳
哈特牧 魯德曼
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新加坡商海特根微光學公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
TW104124161A 2014-07-25 2015-07-24 包括具有光學上彼此分離之區域之影像感測器之光電模組 TWI685126B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201462028893P 2014-07-25 2014-07-25
US62/028,893 2014-07-25
US201462053294P 2014-09-22 2014-09-22
US62/053,294 2014-09-22
US201562156416P 2015-05-04 2015-05-04
US62/156,416 2015-05-04

Publications (2)

Publication Number Publication Date
TW201611319A TW201611319A (zh) 2016-03-16
TWI685126B true TWI685126B (zh) 2020-02-11

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TW104124161A TWI685126B (zh) 2014-07-25 2015-07-24 包括具有光學上彼此分離之區域之影像感測器之光電模組

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US (1) US10199412B2 (https=)
EP (1) EP3172767B1 (https=)
JP (1) JP6689817B2 (https=)
KR (1) KR102455919B1 (https=)
CN (1) CN106575660B (https=)
SG (1) SG11201700235QA (https=)
TW (1) TWI685126B (https=)
WO (1) WO2016013977A1 (https=)

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CN109155258B (zh) 2016-04-08 2022-04-26 赫普塔冈微光有限公司 具有孔径的薄光电模块及其制造
CN114137672A (zh) * 2016-04-15 2022-03-04 赫普塔冈微光有限公司 具有对准间隔件的光电子模块和用于组装所述光电子模块的方法
CN107786784B (zh) * 2016-08-29 2020-06-30 光宝电子(广州)有限公司 镜头组件及其制作方法
JP6620176B2 (ja) * 2018-01-29 2019-12-11 アオイ電子株式会社 半導体装置
US12169315B2 (en) 2018-03-07 2024-12-17 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules and wafer-level methods for manufacturing the same
EP3620813A1 (en) * 2018-09-04 2020-03-11 ams AG Optical sensor arrangement, device and method of manufacturing an optical sensor arrangement
CN111463293B (zh) * 2019-01-17 2022-05-17 光宝光电(常州)有限公司 支架结构、光传感器结构及制造光传感器结构的方法
CN114339000B (zh) * 2021-12-31 2024-04-23 昆山丘钛微电子科技股份有限公司 一种摄像头模组及制备方法
WO2025012223A1 (en) * 2023-07-10 2025-01-16 Sensibel As Optical readout module

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TWM363080U (en) * 2009-01-21 2009-08-11 Pixart Imaging Inc Packaging structure
US20130265590A1 (en) * 2010-10-04 2013-10-10 Robert Bosch Gmbh Optical Shielding Device for Separating Optical Paths

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JP3880278B2 (ja) * 2000-03-10 2007-02-14 オリンパス株式会社 固体撮像装置及びその製造方法
TW513558B (en) 2000-10-27 2002-12-11 Fuji Electric Co Ltd Range finder for automatic focusing
JP2002350129A (ja) 2001-05-23 2002-12-04 Canon Inc 計測装置
JP4016275B2 (ja) 2003-06-25 2007-12-05 富士電機デバイステクノロジー株式会社 測距装置
JP2007110588A (ja) * 2005-10-17 2007-04-26 Funai Electric Co Ltd 複眼撮像装置
JP4492533B2 (ja) * 2005-12-27 2010-06-30 船井電機株式会社 複眼撮像装置
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US8492181B2 (en) * 2011-12-22 2013-07-23 Stmicroelectronics Pte Ltd. Embedded wafer level optical package structure and manufacturing method
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US20130265590A1 (en) * 2010-10-04 2013-10-10 Robert Bosch Gmbh Optical Shielding Device for Separating Optical Paths

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Publication number Publication date
JP6689817B2 (ja) 2020-04-28
SG11201700235QA (en) 2017-02-27
US10199412B2 (en) 2019-02-05
KR20170036020A (ko) 2017-03-31
JP2017523612A (ja) 2017-08-17
KR102455919B1 (ko) 2022-10-17
TW201611319A (zh) 2016-03-16
US20170229505A1 (en) 2017-08-10
WO2016013977A1 (en) 2016-01-28
EP3172767A4 (en) 2018-06-27
CN106575660A (zh) 2017-04-19
CN106575660B (zh) 2019-07-09
EP3172767A1 (en) 2017-05-31
EP3172767B1 (en) 2022-01-05

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