KR102455919B1 - 서로 광학적으로 분리된 영역들을 갖는 이미지 센서를 포함하는 광전 모듈들 - Google Patents

서로 광학적으로 분리된 영역들을 갖는 이미지 센서를 포함하는 광전 모듈들 Download PDF

Info

Publication number
KR102455919B1
KR102455919B1 KR1020177005060A KR20177005060A KR102455919B1 KR 102455919 B1 KR102455919 B1 KR 102455919B1 KR 1020177005060 A KR1020177005060 A KR 1020177005060A KR 20177005060 A KR20177005060 A KR 20177005060A KR 102455919 B1 KR102455919 B1 KR 102455919B1
Authority
KR
South Korea
Prior art keywords
image sensor
adhesive
epoxy
spacer
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177005060A
Other languages
English (en)
Korean (ko)
Other versions
KR20170036020A (ko
Inventor
시몬 겁서
손야 한셀만
치촨 위
크리스 칼세나
궈 슝 우
하르트무트 루드만
Original Assignee
에이엠에스 센서스 싱가포르 피티이. 리미티드.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이엠에스 센서스 싱가포르 피티이. 리미티드. filed Critical 에이엠에스 센서스 싱가포르 피티이. 리미티드.
Publication of KR20170036020A publication Critical patent/KR20170036020A/ko
Application granted granted Critical
Publication of KR102455919B1 publication Critical patent/KR102455919B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H01L27/14623—
    • H01L25/0655—
    • H01L27/14618—
    • H01L27/14685—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
KR1020177005060A 2014-07-25 2015-07-22 서로 광학적으로 분리된 영역들을 갖는 이미지 센서를 포함하는 광전 모듈들 Active KR102455919B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201462028893P 2014-07-25 2014-07-25
US62/028,893 2014-07-25
US201462053294P 2014-09-22 2014-09-22
US62/053,294 2014-09-22
US201562156416P 2015-05-04 2015-05-04
US62/156,416 2015-05-04
PCT/SG2015/050224 WO2016013977A1 (en) 2014-07-25 2015-07-22 Optoelectronic modules including an image sensor having regions optically separated from one another

Publications (2)

Publication Number Publication Date
KR20170036020A KR20170036020A (ko) 2017-03-31
KR102455919B1 true KR102455919B1 (ko) 2022-10-17

Family

ID=55163393

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177005060A Active KR102455919B1 (ko) 2014-07-25 2015-07-22 서로 광학적으로 분리된 영역들을 갖는 이미지 센서를 포함하는 광전 모듈들

Country Status (8)

Country Link
US (1) US10199412B2 (https=)
EP (1) EP3172767B1 (https=)
JP (1) JP6689817B2 (https=)
KR (1) KR102455919B1 (https=)
CN (1) CN106575660B (https=)
SG (1) SG11201700235QA (https=)
TW (1) TWI685126B (https=)
WO (1) WO2016013977A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109155258B (zh) 2016-04-08 2022-04-26 赫普塔冈微光有限公司 具有孔径的薄光电模块及其制造
CN114137672A (zh) * 2016-04-15 2022-03-04 赫普塔冈微光有限公司 具有对准间隔件的光电子模块和用于组装所述光电子模块的方法
CN107786784B (zh) * 2016-08-29 2020-06-30 光宝电子(广州)有限公司 镜头组件及其制作方法
JP6620176B2 (ja) * 2018-01-29 2019-12-11 アオイ電子株式会社 半導体装置
US12169315B2 (en) 2018-03-07 2024-12-17 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules and wafer-level methods for manufacturing the same
EP3620813A1 (en) * 2018-09-04 2020-03-11 ams AG Optical sensor arrangement, device and method of manufacturing an optical sensor arrangement
CN111463293B (zh) * 2019-01-17 2022-05-17 光宝光电(常州)有限公司 支架结构、光传感器结构及制造光传感器结构的方法
CN114339000B (zh) * 2021-12-31 2024-04-23 昆山丘钛微电子科技股份有限公司 一种摄像头模组及制备方法
WO2025012223A1 (en) * 2023-07-10 2025-01-16 Sensibel As Optical readout module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021283A (ja) * 2008-07-09 2010-01-28 Panasonic Corp 固体撮像装置およびその製造方法
US20130164867A1 (en) 2011-12-22 2013-06-27 Stmicroelectronics Pte Ltd. Embedded wafer level optical package structure and manufacturing method
US20130265590A1 (en) * 2010-10-04 2013-10-10 Robert Bosch Gmbh Optical Shielding Device for Separating Optical Paths
US20150034975A1 (en) 2013-07-30 2015-02-05 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3880278B2 (ja) * 2000-03-10 2007-02-14 オリンパス株式会社 固体撮像装置及びその製造方法
TW513558B (en) 2000-10-27 2002-12-11 Fuji Electric Co Ltd Range finder for automatic focusing
JP2002350129A (ja) 2001-05-23 2002-12-04 Canon Inc 計測装置
JP4016275B2 (ja) 2003-06-25 2007-12-05 富士電機デバイステクノロジー株式会社 測距装置
EP1812968B1 (en) * 2004-08-25 2019-01-16 Callahan Cellular L.L.C. Apparatus for multiple camera devices and method of operating same
JP2007110588A (ja) * 2005-10-17 2007-04-26 Funai Electric Co Ltd 複眼撮像装置
JP4492533B2 (ja) * 2005-12-27 2010-06-30 船井電機株式会社 複眼撮像装置
KR100809277B1 (ko) 2006-07-05 2008-03-03 삼성전기주식회사 어레이 렌즈를 갖는 카메라 모듈
TWM363080U (en) * 2009-01-21 2009-08-11 Pixart Imaging Inc Packaging structure
JP5857399B2 (ja) 2010-11-12 2016-02-10 ソニー株式会社 固体撮像装置及び電子機器
CN103620779B (zh) 2011-07-19 2016-12-28 赫普塔冈微光有限公司 光电模块及其制造方法
US8772898B2 (en) 2012-02-09 2014-07-08 Omnivision Technologies, Inc. Lateral light shield in backside illuminated imaging sensors
US9627572B2 (en) * 2012-04-25 2017-04-18 Kyocera Corporation Light receiving and emitting element module and sensor device using same
CN103839840B (zh) 2012-11-22 2016-12-21 光宝新加坡有限公司 感应器单元的制造方法
US9094593B2 (en) * 2013-07-30 2015-07-28 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021283A (ja) * 2008-07-09 2010-01-28 Panasonic Corp 固体撮像装置およびその製造方法
US20130265590A1 (en) * 2010-10-04 2013-10-10 Robert Bosch Gmbh Optical Shielding Device for Separating Optical Paths
US20130164867A1 (en) 2011-12-22 2013-06-27 Stmicroelectronics Pte Ltd. Embedded wafer level optical package structure and manufacturing method
US20150034975A1 (en) 2013-07-30 2015-02-05 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules

Also Published As

Publication number Publication date
TWI685126B (zh) 2020-02-11
JP6689817B2 (ja) 2020-04-28
SG11201700235QA (en) 2017-02-27
US10199412B2 (en) 2019-02-05
KR20170036020A (ko) 2017-03-31
JP2017523612A (ja) 2017-08-17
TW201611319A (zh) 2016-03-16
US20170229505A1 (en) 2017-08-10
WO2016013977A1 (en) 2016-01-28
EP3172767A4 (en) 2018-06-27
CN106575660A (zh) 2017-04-19
CN106575660B (zh) 2019-07-09
EP3172767A1 (en) 2017-05-31
EP3172767B1 (en) 2022-01-05

Similar Documents

Publication Publication Date Title
KR102455919B1 (ko) 서로 광학적으로 분리된 영역들을 갖는 이미지 센서를 포함하는 광전 모듈들
CN108780820B (zh) 具有带有用于接纳光学组件的开口的双重包封的光电模块
TWI651561B (zh) 具有屏蔽以減少光漏或漫射光的光電模組及此模組之製造方法
US10204945B2 (en) Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and fabrication of the optical modules
TWI638470B (zh) 具有屏蔽以減少光漏或漫射光的光電模組及此模組之製造方法
CN106796916A (zh) 具有硅衬底的光电子模块以及此类模块的制造方法
US10663698B2 (en) Optical assemblies including a spacer adhering directly to a substrate
TWI695200B (zh) 光學模組及其製造方法
JP2017523612A5 (https=)
TW201626021A (zh) 光學元件堆疊組件
CN108700721B (zh) 光学元件堆叠组件
WO2018134203A1 (en) Method for producing an optoelectronic element
CN104898190A (zh) 光学镜头及其阵列式镜片模块与制造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000