JP6688184B2 - ワイドギャップ半導体基板の欠陥検査装置 - Google Patents

ワイドギャップ半導体基板の欠陥検査装置 Download PDF

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JP6688184B2
JP6688184B2 JP2016141943A JP2016141943A JP6688184B2 JP 6688184 B2 JP6688184 B2 JP 6688184B2 JP 2016141943 A JP2016141943 A JP 2016141943A JP 2016141943 A JP2016141943 A JP 2016141943A JP 6688184 B2 JP6688184 B2 JP 6688184B2
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JP2018014377A (ja
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浩之 村田
浩之 村田
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Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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Priority to JP2016141943A priority Critical patent/JP6688184B2/ja
Priority to CN201780044105.9A priority patent/CN109478523B/zh
Priority to KR1020197001018A priority patent/KR102268931B1/ko
Priority to PCT/JP2017/017371 priority patent/WO2018016154A1/ja
Priority to TW106117345A priority patent/TWI698942B/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous

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  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016141943A 2016-07-20 2016-07-20 ワイドギャップ半導体基板の欠陥検査装置 Active JP6688184B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016141943A JP6688184B2 (ja) 2016-07-20 2016-07-20 ワイドギャップ半導体基板の欠陥検査装置
CN201780044105.9A CN109478523B (zh) 2016-07-20 2017-05-08 宽带隙半导体基板的缺陷检查装置
KR1020197001018A KR102268931B1 (ko) 2016-07-20 2017-05-08 와이드 갭 반도체 기판의 결함 검사 장치
PCT/JP2017/017371 WO2018016154A1 (ja) 2016-07-20 2017-05-08 ワイドギャップ半導体基板の欠陥検査装置
TW106117345A TWI698942B (zh) 2016-07-20 2017-05-25 寬能隙半導體基板之缺陷檢查裝置

Applications Claiming Priority (1)

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JP2016141943A JP6688184B2 (ja) 2016-07-20 2016-07-20 ワイドギャップ半導体基板の欠陥検査装置

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JP2018014377A JP2018014377A (ja) 2018-01-25
JP6688184B2 true JP6688184B2 (ja) 2020-04-28

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JP (1) JP6688184B2 (ko)
KR (1) KR102268931B1 (ko)
CN (1) CN109478523B (ko)
TW (1) TWI698942B (ko)
WO (1) WO2018016154A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6827433B2 (ja) * 2018-03-02 2021-02-10 株式会社東芝 半導体装置
JP6585799B1 (ja) 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
KR102148167B1 (ko) * 2019-08-26 2020-08-26 주식회사 윈텍오토메이션 직교로봇을 이용한 초경인서트 고속 검사장비의 mgt 및 밀링용 초경인서트 상면 검사 카메라 심도 자동 조절장치
CN111038114B (zh) * 2019-11-13 2021-03-16 深圳市华星光电半导体显示技术有限公司 喷墨打印装置及其制备有机发光二极体显示面板的方法
JPWO2022049979A1 (ko) * 2020-09-03 2022-03-10
KR102381348B1 (ko) * 2020-10-29 2022-03-30 한국전기연구원 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법
KR102223433B1 (ko) * 2020-11-24 2021-03-05 주식회사 트랙스원 디지털 현미경
CN113295616A (zh) * 2021-03-30 2021-08-24 浙江大学杭州国际科创中心 一种SiC晶圆及其外延层结构的综合测试方法
CN117310925B (zh) * 2023-11-28 2024-02-23 武汉中导光电设备有限公司 一种塔轮式物镜切换器及塔轮式物镜

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JP3259070B2 (ja) * 1993-12-07 2002-02-18 大日本印刷株式会社 レンチキュラーレンズシートの欠陥検査装置
JPH10123425A (ja) 1996-10-22 1998-05-15 Nikon Corp ズーム機能付き蛍光顕微鏡
JP2002122552A (ja) * 2000-10-12 2002-04-26 Sony Corp 欠陥検査装置および欠陥検査方法
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
JP2006098156A (ja) * 2004-09-29 2006-04-13 Hitachi High-Technologies Corp 欠陥検査方法及びその装置
JP3917154B2 (ja) 2004-11-19 2007-05-23 独立行政法人 宇宙航空研究開発機構 半導体試料の欠陥評価方法及び装置
TWI404926B (zh) * 2005-08-26 2013-08-11 尼康股份有限公司 Surface defect inspection device and surface defect inspection method
CN1940540A (zh) * 2005-09-30 2007-04-04 Hoya株式会社 缺陷检查装置和缺陷检查方法
JP2008145226A (ja) * 2006-12-08 2008-06-26 Olympus Corp 欠陥検査装置及び欠陥検査方法
JP2008170371A (ja) * 2007-01-15 2008-07-24 Hoya Corp パターン欠陥検査方法、及びパターン欠陥検査装置
JP4446396B2 (ja) * 2007-03-30 2010-04-07 国立大学法人埼玉大学 顕微フォトルミネッセンス測定装置及び測定方法
JP5000424B2 (ja) * 2007-08-10 2012-08-15 一般財団法人電力中央研究所 炭化珪素単結晶ウェハの欠陥検出方法、及び炭化珪素半導体素子の製造方法
JP2009180597A (ja) * 2008-01-30 2009-08-13 Dainippon Screen Mfg Co Ltd 欠陥検出装置および欠陥検出方法
JP2010271186A (ja) * 2009-05-21 2010-12-02 Nikon Corp 欠陥検査装置
JP5946751B2 (ja) * 2012-11-08 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥検出方法及びその装置並びに欠陥観察方法及びその装置
US9530703B2 (en) 2012-12-20 2016-12-27 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device
JP6124287B2 (ja) * 2013-03-04 2017-05-10 一般財団法人電力中央研究所 炭化珪素基板又は炭化珪素半導体素子の検査方法及び炭化珪素基板又は炭化珪素半導体素子の製造方法
JP5944850B2 (ja) * 2013-03-11 2016-07-05 株式会社日立ハイテクノロジーズ 欠陥検査方法及びこれを用いた装置
JP5633099B1 (ja) * 2013-12-18 2014-12-03 レーザーテック株式会社 欠陥分類方法及び検査装置
US9551672B2 (en) * 2013-12-18 2017-01-24 Lasertec Corporation Defect classifying method and optical inspection apparatus for silicon carbide substrate

Also Published As

Publication number Publication date
TWI698942B (zh) 2020-07-11
WO2018016154A1 (ja) 2018-01-25
JP2018014377A (ja) 2018-01-25
KR102268931B1 (ko) 2021-06-23
TW201812943A (zh) 2018-04-01
CN109478523B (zh) 2022-12-16
CN109478523A (zh) 2019-03-15
KR20190031233A (ko) 2019-03-25

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