JP6683289B2 - 薄膜シールド層付き電子部品 - Google Patents
薄膜シールド層付き電子部品 Download PDFInfo
- Publication number
- JP6683289B2 JP6683289B2 JP2019502859A JP2019502859A JP6683289B2 JP 6683289 B2 JP6683289 B2 JP 6683289B2 JP 2019502859 A JP2019502859 A JP 2019502859A JP 2019502859 A JP2019502859 A JP 2019502859A JP 6683289 B2 JP6683289 B2 JP 6683289B2
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- JP
- Japan
- Prior art keywords
- thin film
- shield layer
- film shield
- metal thin
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims description 267
- 239000002184 metal Substances 0.000 claims description 194
- 229910052751 metal Inorganic materials 0.000 claims description 194
- 229920005989 resin Polymers 0.000 claims description 50
- 239000011347 resin Substances 0.000 claims description 50
- 238000007789 sealing Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 286
- 239000004020 conductor Substances 0.000 description 50
- 239000010408 film Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 230000005855 radiation Effects 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 9
- 239000006247 magnetic powder Substances 0.000 description 9
- 241001125929 Trisopterus luscus Species 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 229910000889 permalloy Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000644 propagated effect Effects 0.000 description 6
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/3135—Double encapsulation or coating and encapsulation
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- H05K1/0237—High frequency adaptations
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- H05K2203/1316—Moulded encapsulation of mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
本発明の第1の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図1は、本発明の第1の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。なお、図1では、電子部品の構成を識別し易くするために、構成要素を識別するための記号の付記を適宜省略している。
本発明の第2の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図2は、本発明の第2の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。なお、図2では、電子部品の構成を識別し易くするために、構成要素を識別するための記号の付記を適宜省略している。
本発明の第3の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図4は、本発明の第3の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。なお、図4では、電子部品の構成を識別し易くするために、構成要素を識別するための記号の付記を適宜省略している。
本発明の第4の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図5は、本発明の第4の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。なお、図5では、電子部品の構成を識別し易くするために、構成要素を識別するための記号の付記を適宜省略している。
本発明の第5の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図6(A)は、本発明の第5の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。図6(B)は、図6(A)の側面断面図の一部を拡大した図である。図6(C)は、薄膜シールド層付き電子部品10Dを第1主面201側から、すなわち、厚み方向から平面視した図である。
本発明の第6の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図7(A)は、本発明の第6の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。図7(B)は、薄膜シールド層付き電子部品を厚み方向から、すなわち、天面側から、平面視した図である。図7(C)は、薄膜シールド層付き電子部品の回路図である。
本発明の第7の実施形態に係る薄膜シールド層付き電子部品について、図を参照して説明する。図8(A)は、本発明の第7の実施形態に係る薄膜シールド層付き電子部品の側面断面図である。図8(B)は、薄膜シールド層付き電子部品を厚み方向から、すなわち、天面側から、平面視した図である。図8(C)は、薄膜シールド層付き電子部品の回路図である。
20、21…配線基板
51、52、53、54…表面実装部品
60、61…封止樹脂層
70、70D、71…金属薄膜シールド層
75…開口
700、710…エッジ部
80、80A、80B、80C、80D、80E、80F…磁性金属薄膜シールド層
90A、90C…磁性シールド層
201、203…第1主面
202、204…第2主面
211、213…導体パターン
212、214…層間接続導体
301…グランド用端子導体
311…外部接続用端子導体
411、412…部品用ランド導体
450…金属シールド用ランド導体
GND…グランド
Pin…入力端子
Pout…出力端子
FET1、FET2…電界効果トランジスタ
Claims (8)
- 配線基板と、
前記配線基板の第1主面に搭載された表面実装部品と、
非磁性金属材料の薄膜プロセスによって、前記表面実装部品の天面側と側面側との全体を覆い、天面部と側面部とを有する、金属薄膜シールド層と、
磁性金属材料の薄膜プロセスによって、前記金属薄膜シールド層の前記天面部と前記側面部が連接するエッジ部の全体を含み、前記天面部と前記側面部とを覆う、磁性金属薄膜シールド層と、
を備え、
前記表面実装部品の天面側と側面側の全体を覆うように、さらに磁性材料を含んだ樹脂層が設けられている、
薄膜シールド層付き電子部品。 - 配線基板と、
前記配線基板の第1主面に搭載された表面実装部品と、
非磁性金属材料の薄膜プロセスによって、前記表面実装部品の天面側と側面側とを覆い、天面部と側面部とを有する、金属薄膜シールド層と、
磁性金属材料の薄膜プロセスによって、前記金属薄膜シールド層の前記天面部と前記側面部が連接するエッジ部の全体を含み、前記天面部と前記側面部とを覆う、磁性金属薄膜シールド層と、
を備え、
前記表面実装部品の天面側と側面側の全体を覆うように、さらに磁性材料を含んだ樹脂層が設けられており、
前記金属薄膜シールド層の前記天面部を平面視して、
前記金属薄膜シールド層は、少なくとも一つの前記表面実装部品と重なる部分に開口を有する、
薄膜シールド層付き電子部品。 - 前記表面実装部品を覆うように封止樹脂層が設けられており、
前記金属薄膜シールド層は、前記封止樹脂層の外側に設けられている、
請求項1または請求項2に記載の薄膜シールド層付き電子部品。 - 前記金属薄膜シールド層の前記天面部と前記側面部と、
前記磁性金属薄膜シールド層と、が当接して積層されている、
請求項1乃至請求項3のいずれかに記載の薄膜シールド層付き電子部品。 - 前記配線基板はグランド電極を備えており、
前記金属薄膜シールド層は前記グランド電極に接続されている、
請求項1乃至請求項4のいずれかに記載の薄膜シールド層付き電子部品。 - 前記配線基板は磁性体層を含む磁性体基板である、
請求項1乃至請求項5のいずれかに記載の薄膜シールド層付き電子部品。 - 前記磁性金属薄膜シールド層は、複数の前記表面実装部品のうち、一部の表面実装部品の天面側と側面側との全体を覆う、
請求項1乃至請求項6のいずれかに記載の薄膜シールド層付き電子部品。 - 前記金属薄膜シールド層の前記エッジ部は曲率を有する、請求項1乃至請求項7のいずれかに記載の薄膜シールド層付き電子部品。
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