JP6679412B2 - ストレージ制御装置、情報処理方法及びプログラム - Google Patents

ストレージ制御装置、情報処理方法及びプログラム Download PDF

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Publication number
JP6679412B2
JP6679412B2 JP2016100796A JP2016100796A JP6679412B2 JP 6679412 B2 JP6679412 B2 JP 6679412B2 JP 2016100796 A JP2016100796 A JP 2016100796A JP 2016100796 A JP2016100796 A JP 2016100796A JP 6679412 B2 JP6679412 B2 JP 6679412B2
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Japan
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area
mlc
mode partition
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JP2016100796A
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Japanese (ja)
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JP2017207980A (ja
JP2017207980A5 (enExample
Inventor
琢真 安川
琢真 安川
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016100796A priority Critical patent/JP6679412B2/ja
Priority to US15/594,212 priority patent/US10276249B2/en
Priority to CN201710356345.4A priority patent/CN107402888A/zh
Publication of JP2017207980A publication Critical patent/JP2017207980A/ja
Publication of JP2017207980A5 publication Critical patent/JP2017207980A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
JP2016100796A 2016-05-19 2016-05-19 ストレージ制御装置、情報処理方法及びプログラム Expired - Fee Related JP6679412B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016100796A JP6679412B2 (ja) 2016-05-19 2016-05-19 ストレージ制御装置、情報処理方法及びプログラム
US15/594,212 US10276249B2 (en) 2016-05-19 2017-05-12 Storage control device, information processing method, and storage medium
CN201710356345.4A CN107402888A (zh) 2016-05-19 2017-05-19 存储控制设备及信息处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016100796A JP6679412B2 (ja) 2016-05-19 2016-05-19 ストレージ制御装置、情報処理方法及びプログラム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020047673A Division JP6852207B2 (ja) 2020-03-18 2020-03-18 ストレージ制御装置、情報処理方法及びプログラム

Publications (3)

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JP2017207980A JP2017207980A (ja) 2017-11-24
JP2017207980A5 JP2017207980A5 (enExample) 2019-06-13
JP6679412B2 true JP6679412B2 (ja) 2020-04-15

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JP2016100796A Expired - Fee Related JP6679412B2 (ja) 2016-05-19 2016-05-19 ストレージ制御装置、情報処理方法及びプログラム

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Country Link
US (1) US10276249B2 (enExample)
JP (1) JP6679412B2 (enExample)
CN (1) CN107402888A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7047628B2 (ja) * 2018-06-25 2022-04-05 日本精機株式会社 車両用表示装置
JP7256976B2 (ja) * 2018-06-25 2023-04-13 日本精機株式会社 車両用表示装置
US11640262B2 (en) * 2020-05-07 2023-05-02 Micron Technology, Inc. Implementing variable number of bits per cell on storage devices
US20220374216A1 (en) * 2021-05-20 2022-11-24 Lenovo (United States) Inc. Method of manufacturing information processing apparatus and mobile computer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2077559B1 (en) * 2007-12-27 2012-11-07 Hagiwara Solutions Co., Ltd. Refresh method of a flash memory
JP2010198407A (ja) * 2009-02-26 2010-09-09 Sony Corp 情報処理装置、およびデータ記録制御方法、並びにプログラム
JP2012089085A (ja) * 2010-10-22 2012-05-10 Toshiba Corp 半導体メモリ装置および半導体メモリシステム
KR20120043524A (ko) * 2010-10-26 2012-05-04 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
WO2012147136A1 (en) * 2011-04-28 2012-11-01 Hitachi, Ltd. Semiconductor storage apparatus and method for controlling semiconductor storage apparatus
US9176864B2 (en) * 2011-05-17 2015-11-03 SanDisk Technologies, Inc. Non-volatile memory and method having block management with hot/cold data sorting
JP2012240397A (ja) * 2011-05-24 2012-12-10 Canon Inc 印刷装置及びその制御方法
KR101625777B1 (ko) * 2011-12-28 2016-05-30 인텔 코포레이션 휘발성 메모리 및 비휘발성 메모리 간의 코드 및 데이터 저장소들을 분산하기 위한 방법 및 장치
US8954655B2 (en) * 2013-01-14 2015-02-10 Western Digital Technologies, Inc. Systems and methods of configuring a mode of operation in a solid-state memory
JP2015148859A (ja) * 2014-02-05 2015-08-20 コニカミノルタ株式会社 情報処理装置及び起動制御プログラム並びに起動制御方法
CN104934066B (zh) * 2014-03-19 2018-03-27 安华高科技通用Ip(新加坡)公司 Nand闪存中的读取干扰处理
US10234931B2 (en) * 2014-05-05 2019-03-19 Empire Technology Development Llc Electronic device
CN103984509B (zh) * 2014-06-11 2019-02-12 上海新储集成电路有限公司 异构nand型固态硬盘及提高其性能的方法
US10108546B2 (en) * 2014-12-30 2018-10-23 Sandisk Technologies Llc Method and system for using non-volatile memory as a replacement for volatile memory
US10048898B2 (en) * 2015-06-15 2018-08-14 Sandisk Technologies Llc Data retention in a memory block based on local heating
KR102309841B1 (ko) * 2015-08-24 2021-10-12 삼성전자주식회사 표면 실장 기술의 적용에 따른 메모리 셀의 문턱 전압 산포 변화 복구 기능을 갖는 데이터 스토리지 및 그것의 동작 방법

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Publication number Publication date
JP2017207980A (ja) 2017-11-24
US10276249B2 (en) 2019-04-30
CN107402888A (zh) 2017-11-28
US20170337977A1 (en) 2017-11-23

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