JP6679044B2 - Mems素子 - Google Patents
Mems素子 Download PDFInfo
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- JP6679044B2 JP6679044B2 JP2016103309A JP2016103309A JP6679044B2 JP 6679044 B2 JP6679044 B2 JP 6679044B2 JP 2016103309 A JP2016103309 A JP 2016103309A JP 2016103309 A JP2016103309 A JP 2016103309A JP 6679044 B2 JP6679044 B2 JP 6679044B2
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- electrode
- mems element
- movable electrode
- protrusions
- film
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- 239000000758 substrate Substances 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
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- Micromachines (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Description
Claims (4)
- 支持基板上に、外圧を受けて変位する可動電極膜を配置し、該可動電極膜は表面に少なくとも二つの電極のいずれかに接続した複数の電極突起を備え、前記可動電極膜の変位とともに各前記電極突起間の距離が変化し、該距離の変化に応じて変化する前記二つの電極間の容量値から前記可動電極膜が受けた前記外圧の大きさを検知することを特徴とするMEMS素子。
- 請求項1に記載のMEMS素子において、
前記電極突起を同心円状に配置することを特徴とするMEMS素子。 - 請求項1または2いずれか記載のMEMS素子において、
前記電極と前記電極突起との間、および前記電極突起間を接続する配線を、相互に重ならないように配置することを特徴とするMEMS素子。 - 請求項1乃至3いずれか記載のMEMS素子において、
前記電極突起の表面を絶縁層で被覆することを特徴とするMEMS素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016103309A JP6679044B2 (ja) | 2016-05-24 | 2016-05-24 | Mems素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2016103309A JP6679044B2 (ja) | 2016-05-24 | 2016-05-24 | Mems素子 |
Publications (2)
Publication Number | Publication Date |
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JP2017212530A JP2017212530A (ja) | 2017-11-30 |
JP6679044B2 true JP6679044B2 (ja) | 2020-04-15 |
Family
ID=60475706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016103309A Active JP6679044B2 (ja) | 2016-05-24 | 2016-05-24 | Mems素子 |
Country Status (1)
Country | Link |
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JP (1) | JP6679044B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109030581B (zh) * | 2018-07-04 | 2024-04-16 | 南京铁道职业技术学院 | 一种复合结构的受电弓碳滑板表面损伤检测用电荷变换器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5218576B2 (ja) * | 1974-04-17 | 1977-05-23 | ||
US7344262B2 (en) * | 2004-09-29 | 2008-03-18 | Lucent Technologies Inc. | MEMS mirror with tip or piston motion for use in adaptive optics |
JP2008259061A (ja) * | 2007-04-06 | 2008-10-23 | Matsushita Electric Works Ltd | 静電型トランスデューサ |
JP5338825B2 (ja) * | 2011-02-23 | 2013-11-13 | オムロン株式会社 | 音響センサ及びマイクロフォン |
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2016
- 2016-05-24 JP JP2016103309A patent/JP6679044B2/ja active Active
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JP2017212530A (ja) | 2017-11-30 |
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