JP6678007B2 - 光素子用パッケージ及びその製造方法と光素子装置 - Google Patents

光素子用パッケージ及びその製造方法と光素子装置 Download PDF

Info

Publication number
JP6678007B2
JP6678007B2 JP2015217491A JP2015217491A JP6678007B2 JP 6678007 B2 JP6678007 B2 JP 6678007B2 JP 2015217491 A JP2015217491 A JP 2015217491A JP 2015217491 A JP2015217491 A JP 2015217491A JP 6678007 B2 JP6678007 B2 JP 6678007B2
Authority
JP
Japan
Prior art keywords
lead
eyelet
lead wiring
insulating substrate
wiring portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015217491A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017092136A (ja
JP2017092136A5 (enExample
Inventor
木村　康之
康之 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2015217491A priority Critical patent/JP6678007B2/ja
Priority to US15/341,427 priority patent/US10389084B2/en
Priority to CN201610945411.7A priority patent/CN106680959B/zh
Priority to TW105135905A priority patent/TWI743060B/zh
Publication of JP2017092136A publication Critical patent/JP2017092136A/ja
Publication of JP2017092136A5 publication Critical patent/JP2017092136A5/ja
Application granted granted Critical
Publication of JP6678007B2 publication Critical patent/JP6678007B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
JP2015217491A 2015-11-05 2015-11-05 光素子用パッケージ及びその製造方法と光素子装置 Active JP6678007B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015217491A JP6678007B2 (ja) 2015-11-05 2015-11-05 光素子用パッケージ及びその製造方法と光素子装置
US15/341,427 US10389084B2 (en) 2015-11-05 2016-11-02 Optical element package and optical element device
CN201610945411.7A CN106680959B (zh) 2015-11-05 2016-11-02 光学元件封装和光学元件设备
TW105135905A TWI743060B (zh) 2015-11-05 2016-11-04 光學元件封裝與光學元件裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015217491A JP6678007B2 (ja) 2015-11-05 2015-11-05 光素子用パッケージ及びその製造方法と光素子装置

Publications (3)

Publication Number Publication Date
JP2017092136A JP2017092136A (ja) 2017-05-25
JP2017092136A5 JP2017092136A5 (enExample) 2018-10-18
JP6678007B2 true JP6678007B2 (ja) 2020-04-08

Family

ID=58663775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015217491A Active JP6678007B2 (ja) 2015-11-05 2015-11-05 光素子用パッケージ及びその製造方法と光素子装置

Country Status (4)

Country Link
US (1) US10389084B2 (enExample)
JP (1) JP6678007B2 (enExample)
CN (1) CN106680959B (enExample)
TW (1) TWI743060B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431955B2 (en) * 2014-04-25 2019-10-01 Lmd Power Of Light Corp Laser core having conductive mass electrical connection
DE102017120216B4 (de) * 2017-09-01 2019-05-23 Schott Ag TO-Gehäuse für einen DFB-Laser
JP7045204B2 (ja) * 2018-01-26 2022-03-31 ローム株式会社 半導体レーザ装置
JPWO2020175619A1 (ja) * 2019-02-28 2021-12-16 京セラ株式会社 電子部品搭載用パッケージ、電子装置及び発光装置
JP7398877B2 (ja) * 2019-04-18 2023-12-15 新光電気工業株式会社 半導体装置用ステム及び半導体装置
JP2021027136A (ja) * 2019-08-02 2021-02-22 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光モジュール
JP7350646B2 (ja) * 2019-12-17 2023-09-26 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光モジュール
US11340412B2 (en) * 2020-02-28 2022-05-24 CIG Photonics Japan Limited Optical module
JP7382871B2 (ja) 2020-03-24 2023-11-17 新光電気工業株式会社 半導体パッケージ用ステム、半導体パッケージ
JP7382872B2 (ja) * 2020-03-24 2023-11-17 新光電気工業株式会社 半導体パッケージ用ステム、半導体パッケージ
JP7437278B2 (ja) * 2020-09-25 2024-02-22 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光モジュール

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152624A (en) * 1978-03-16 1979-05-01 Monsanto Company Molded LED indicator
JPS63178344U (enExample) * 1987-05-09 1988-11-18
JPH054598U (ja) * 1991-06-28 1993-01-22 関西日本電気株式会社 リード成形装置
US6020632A (en) * 1997-02-26 2000-02-01 Motorola, Inc. Electronic component including an adjustable cap
TW357470B (en) * 1997-07-15 1999-05-01 Kai-Feng Huang Vertical resonance cavity injection-type glowing laser package
JP4328470B2 (ja) * 2001-01-23 2009-09-09 富士通株式会社 Ｃａｎタイプ光デバイスのリード曲げ方法
JP2003037329A (ja) * 2001-07-24 2003-02-07 Hitachi Cable Ltd 光送信器
JP4586337B2 (ja) * 2002-08-26 2010-11-24 住友電気工業株式会社 半導体レーザモジュールおよび半導体レーザ装置
JP3848616B2 (ja) * 2002-10-15 2006-11-22 新光電気工業株式会社 ガラス端子
JP3931810B2 (ja) * 2002-12-27 2007-06-20 アイシン・エィ・ダブリュ株式会社 車輌の制御装置
JP2004241480A (ja) * 2003-02-04 2004-08-26 Mitsubishi Electric Corp 光半導体装置
JP4617636B2 (ja) * 2003-03-19 2011-01-26 住友電気工業株式会社 光モジュール
KR100526504B1 (ko) * 2003-06-04 2005-11-08 삼성전자주식회사 광소자 모듈 패키지 및 그 제조 방법
US7196389B2 (en) * 2005-02-14 2007-03-27 Mitsubishi Denki Kabushiki Kaisha Optical semiconductor device package and optical semiconductor device
JP4823648B2 (ja) * 2005-02-14 2011-11-24 三菱電機株式会社 光半導体素子パッケージおよび光半導体素子
TWI302758B (en) * 2006-04-21 2008-11-01 Silicon Base Dev Inc Package base structure of photo diode and manufacturing method of the same
TWI346395B (en) * 2007-03-02 2011-08-01 Advanced Optoelectronic Tech Packaging structure of laser diode surface mount device and fabricating method thereof
DE102009018603B9 (de) * 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
JP2010062512A (ja) * 2008-07-02 2010-03-18 Kyocera Corp 電子部品搭載用パッケージおよびそれを用いた電子装置
JP2010087020A (ja) * 2008-09-29 2010-04-15 Nec Electronics Corp 半導体レーザモジュール
JP5473583B2 (ja) * 2009-12-22 2014-04-16 京セラ株式会社 電子部品搭載用パッケージおよびそれを用いた電子装置
TWI404159B (zh) * 2010-03-04 2013-08-01 Univ Nat Kaohsiung Applied Sci 高速率雷射二極體封裝座
JP6614811B2 (ja) * 2015-05-29 2019-12-04 新光電気工業株式会社 半導体装置用ステム及び半導体装置

Also Published As

Publication number Publication date
JP2017092136A (ja) 2017-05-25
CN106680959B (zh) 2021-01-12
CN106680959A (zh) 2017-05-17
TW201728024A (zh) 2017-08-01
TWI743060B (zh) 2021-10-21
US10389084B2 (en) 2019-08-20
US20170133821A1 (en) 2017-05-11

Similar Documents

Publication Publication Date Title
JP6678007B2 (ja) 光素子用パッケージ及びその製造方法と光素子装置
JP6614811B2 (ja) 半導体装置用ステム及び半導体装置
US20010017964A1 (en) Optical interconnection module
JP4015440B2 (ja) 光通信モジュール
JP6576665B2 (ja) 光素子用パッケージ及び光素子装置
JPWO2009130743A1 (ja) 光素子用パッケージ、半導体発光装置および照明装置
CN111834885B (zh) 半导体装置用管座和半导体装置
CN107658691B (zh) 光半导体装置
JPH0760906B2 (ja) 光素子用パツケ−ジ
JP2015106663A (ja) 配線基板の接続方法、および配線基板の実装構造
JP2010541219A (ja) オプトエレクトロニクス部品を備えている配置構造
CN113193475A (zh) 一种同轴封装的25g高速激光器及制作方法
JP5981145B2 (ja) 回路基板および通信システム
US7977700B2 (en) Resin and metal semiconductor device package and semiconductor light-emitting device incorporating the package
JP2002280479A (ja) 表面実装型の半導体装置
JP3501695B2 (ja) 半導体発光装置
JP2008187428A (ja) マイクロストリップ線路を有するフレキシブル基板、およびこれを用いた光モジュール
JP5195476B2 (ja) 光伝送モジュール
JP3726718B2 (ja) 半導体装置
JP2010141175A (ja) 半導体装置
JP2001326291A (ja) 半導体素子モジュールおよび半導体装置
JPH07130798A (ja) 半導体装置およびその製造方法
JP2013142731A (ja) 光モジュール、回路基板および通信システム
JPH11150200A (ja) 半導体素子モジュールおよび半導体装置
JPS6242376B2 (enExample)

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20180207

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180907

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180907

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190724

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190806

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190930

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200225

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200316

R150 Certificate of patent or registration of utility model

Ref document number: 6678007

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150