JP6674255B2 - 固体撮像素子及び撮像装置 - Google Patents

固体撮像素子及び撮像装置 Download PDF

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Publication number
JP6674255B2
JP6674255B2 JP2015256094A JP2015256094A JP6674255B2 JP 6674255 B2 JP6674255 B2 JP 6674255B2 JP 2015256094 A JP2015256094 A JP 2015256094A JP 2015256094 A JP2015256094 A JP 2015256094A JP 6674255 B2 JP6674255 B2 JP 6674255B2
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Japan
Prior art keywords
image
image signal
unit
signal
imaging device
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JP2015256094A
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English (en)
Japanese (ja)
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JP2017120971A (ja
JP2017120971A5 (enExample
Inventor
聡史 鈴木
聡史 鈴木
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015256094A priority Critical patent/JP6674255B2/ja
Priority to KR1020160165513A priority patent/KR102117858B1/ko
Priority to US15/381,840 priority patent/US10122948B2/en
Priority to CN201611236982.XA priority patent/CN107071241B/zh
Publication of JP2017120971A publication Critical patent/JP2017120971A/ja
Publication of JP2017120971A5 publication Critical patent/JP2017120971A5/ja
Application granted granted Critical
Publication of JP6674255B2 publication Critical patent/JP6674255B2/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/95—Computational photography systems, e.g. light-field imaging systems
    • H04N23/951—Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H04N25/534—Control of the integration time by using differing integration times for different sensor regions depending on the spectral component
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/222—Studio circuitry; Studio devices; Studio equipment
    • H04N5/262—Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects ; Cameras specially adapted for the electronic generation of special effects
    • H04N5/265—Mixing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Studio Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2015256094A 2015-12-28 2015-12-28 固体撮像素子及び撮像装置 Active JP6674255B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015256094A JP6674255B2 (ja) 2015-12-28 2015-12-28 固体撮像素子及び撮像装置
KR1020160165513A KR102117858B1 (ko) 2015-12-28 2016-12-07 고체 촬상 소자 및 촬상장치
US15/381,840 US10122948B2 (en) 2015-12-28 2016-12-16 Solid-state image pickup element and image pickup apparatus
CN201611236982.XA CN107071241B (zh) 2015-12-28 2016-12-28 固态摄像元件和摄像设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015256094A JP6674255B2 (ja) 2015-12-28 2015-12-28 固体撮像素子及び撮像装置

Publications (3)

Publication Number Publication Date
JP2017120971A JP2017120971A (ja) 2017-07-06
JP2017120971A5 JP2017120971A5 (enExample) 2019-02-14
JP6674255B2 true JP6674255B2 (ja) 2020-04-01

Family

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Family Applications (1)

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JP2015256094A Active JP6674255B2 (ja) 2015-12-28 2015-12-28 固体撮像素子及び撮像装置

Country Status (4)

Country Link
US (1) US10122948B2 (enExample)
JP (1) JP6674255B2 (enExample)
KR (1) KR102117858B1 (enExample)
CN (1) CN107071241B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102301940B1 (ko) * 2017-12-01 2021-09-14 삼성전자주식회사 이미지 합성 방법 및 장치
CN108900789B (zh) * 2018-08-23 2024-07-12 Oppo广东移动通信有限公司 一种图像传感器、摄像头模组及电子设备
JP7374630B2 (ja) 2019-07-09 2023-11-07 キヤノン株式会社 撮像装置及びその駆動方法

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JPH0817455B2 (ja) 1987-06-09 1996-02-21 キヤノン株式会社 撮像装置
JP3166776B2 (ja) * 1990-11-30 2001-05-14 キヤノン株式会社 撮像装置及び撮像方法
JP4996402B2 (ja) * 2007-09-14 2012-08-08 株式会社東芝 撮像装置
US8115858B2 (en) * 2008-01-16 2012-02-14 Samsung Electronics Co., Ltd. System and method for acquiring moving images
US7795650B2 (en) * 2008-12-09 2010-09-14 Teledyne Scientific & Imaging Llc Method and apparatus for backside illuminated image sensors using capacitively coupled readout integrated circuits
US8355059B2 (en) * 2009-02-06 2013-01-15 Canon Kabushiki Kaisha Image capturing apparatus and control method thereof
KR101614914B1 (ko) * 2009-07-23 2016-04-25 삼성전자주식회사 모션 적응적 고대비 영상 획득 장치 및 방법
JP5445235B2 (ja) * 2010-03-09 2014-03-19 ソニー株式会社 画像処理装置、画像処理方法およびプログラム
JP5655667B2 (ja) 2011-03-31 2015-01-21 カシオ計算機株式会社 撮像装置及び撮像制御方法、画像処理装置及び画像処理方法、並びにプログラム
US8947555B2 (en) * 2011-04-18 2015-02-03 Qualcomm Incorporated White balance optimization with high dynamic range images
JP5787648B2 (ja) * 2011-07-11 2015-09-30 キヤノン株式会社 画像処理装置及び画像処理装置の制御方法
JP2013021660A (ja) * 2011-07-14 2013-01-31 Sony Corp 画像処理装置、撮像装置、および画像処理方法、並びにプログラム
US8913153B2 (en) * 2011-10-06 2014-12-16 Aptina Imaging Corporation Imaging systems and methods for generating motion-compensated high-dynamic-range images
US9185307B2 (en) * 2012-02-21 2015-11-10 Semiconductor Components Industries, Llc Detecting transient signals using stacked-chip imaging systems
BR112014027066A2 (pt) * 2012-05-02 2017-06-27 Nikon Corp dispositivo de formação de imagem
JP6137792B2 (ja) * 2012-07-10 2017-05-31 キヤノン株式会社 撮像装置、該撮像装置の制御方法、プログラム、記憶媒体
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CN104125408B (zh) * 2013-04-28 2018-06-12 比亚迪股份有限公司 一种高动态范围图像处理方法及装置
KR102106537B1 (ko) * 2013-09-27 2020-05-04 삼성전자주식회사 하이 다이나믹 레인지 영상 생성 방법 및, 그에 따른 장치, 그에 따른 시스템
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TWI530911B (zh) 2014-02-25 2016-04-21 宏碁股份有限公司 動態曝光調整方法及其電子裝置
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JP2015144475A (ja) * 2015-03-11 2015-08-06 キヤノン株式会社 撮像装置、撮像装置の制御方法、プログラム及び記憶媒体
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Also Published As

Publication number Publication date
CN107071241A (zh) 2017-08-18
KR102117858B1 (ko) 2020-06-02
JP2017120971A (ja) 2017-07-06
US20170187971A1 (en) 2017-06-29
US10122948B2 (en) 2018-11-06
CN107071241B (zh) 2020-06-23
KR20170077784A (ko) 2017-07-06

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