JP6673174B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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JP6673174B2
JP6673174B2 JP2016240558A JP2016240558A JP6673174B2 JP 6673174 B2 JP6673174 B2 JP 6673174B2 JP 2016240558 A JP2016240558 A JP 2016240558A JP 2016240558 A JP2016240558 A JP 2016240558A JP 6673174 B2 JP6673174 B2 JP 6673174B2
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layer
conductivity type
guard ring
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forming
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JP2018098324A (ja
JP2018098324A5 (enExample
Inventor
竹内　有一
有一 竹内
龍太 鈴木
龍太 鈴木
永岡　達司
達司 永岡
佐智子 青井
佐智子 青井
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Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Priority to JP2016240558A priority Critical patent/JP6673174B2/ja
Priority to CN201780075779.5A priority patent/CN110050349B/zh
Priority to PCT/JP2017/044580 priority patent/WO2018110556A1/ja
Publication of JP2018098324A publication Critical patent/JP2018098324A/ja
Publication of JP2018098324A5 publication Critical patent/JP2018098324A5/ja
Priority to US16/427,413 priority patent/US11177353B2/en
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Priority to US17/477,168 priority patent/US11769801B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016240558A 2016-12-12 2016-12-12 炭化珪素半導体装置およびその製造方法 Expired - Fee Related JP6673174B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016240558A JP6673174B2 (ja) 2016-12-12 2016-12-12 炭化珪素半導体装置およびその製造方法
CN201780075779.5A CN110050349B (zh) 2016-12-12 2017-12-12 碳化硅半导体装置及其制造方法
PCT/JP2017/044580 WO2018110556A1 (ja) 2016-12-12 2017-12-12 炭化珪素半導体装置およびその製造方法
US16/427,413 US11177353B2 (en) 2016-12-12 2019-05-31 Silicon carbide semiconductor device, and manufacturing method of the same
US17/477,168 US11769801B2 (en) 2016-12-12 2021-09-16 Silicon carbide semiconductor device with cell section and outer periphery section

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Application Number Priority Date Filing Date Title
JP2016240558A JP6673174B2 (ja) 2016-12-12 2016-12-12 炭化珪素半導体装置およびその製造方法

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JP2018098324A JP2018098324A (ja) 2018-06-21
JP2018098324A5 JP2018098324A5 (enExample) 2019-03-28
JP6673174B2 true JP6673174B2 (ja) 2020-03-25

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JP (1) JP6673174B2 (enExample)
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WO (1) WO2018110556A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020119922A (ja) * 2019-01-18 2020-08-06 トヨタ自動車株式会社 半導体装置
JP2020123607A (ja) * 2019-01-29 2020-08-13 トヨタ自動車株式会社 半導体装置
JP7142606B2 (ja) * 2019-06-04 2022-09-27 三菱電機株式会社 半導体装置
US11450734B2 (en) 2019-06-17 2022-09-20 Fuji Electric Co., Ltd. Semiconductor device and fabrication method for semiconductor device
JP7249921B2 (ja) 2019-09-20 2023-03-31 株式会社東芝 半導体装置
JP7425943B2 (ja) * 2019-12-12 2024-02-01 株式会社デンソー 炭化珪素半導体装置
KR102817292B1 (ko) * 2020-11-30 2025-06-05 현대자동차 주식회사 반도체 소자 및 그 제조 방법
JP7647104B2 (ja) * 2021-01-06 2025-03-18 富士電機株式会社 半導体装置
TWI782390B (zh) * 2021-01-08 2022-11-01 力晶積成電子製造股份有限公司 半導體結構
JP7593235B2 (ja) * 2021-05-28 2024-12-03 株式会社デンソー 半導体装置
JP2023140037A (ja) * 2022-03-22 2023-10-04 株式会社東芝 半導体装置
JP2024060452A (ja) * 2022-10-19 2024-05-02 株式会社デンソー 半導体装置とその製造方法
JP2024132455A (ja) * 2023-03-17 2024-10-01 株式会社東芝 半導体装置
WO2025150283A1 (ja) * 2024-01-10 2025-07-17 富士電機株式会社 半導体装置

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Publication number Priority date Publication date Assignee Title
JP3506676B2 (ja) * 2001-01-25 2004-03-15 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP3914226B2 (ja) * 2004-09-29 2007-05-16 株式会社東芝 高耐圧半導体装置
JP5198030B2 (ja) * 2007-10-22 2013-05-15 株式会社東芝 半導体素子
EP2091083A3 (en) 2008-02-13 2009-10-14 Denso Corporation Silicon carbide semiconductor device including a deep layer
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
JP5224289B2 (ja) * 2009-05-12 2013-07-03 三菱電機株式会社 半導体装置
JP2011066246A (ja) * 2009-09-17 2011-03-31 Seiko Instruments Inc 静電気保護用半導体装置
JP5533677B2 (ja) * 2011-01-07 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2012169384A (ja) * 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
US8618582B2 (en) * 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5751213B2 (ja) * 2012-06-14 2015-07-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9318624B2 (en) * 2012-11-27 2016-04-19 Cree, Inc. Schottky structure employing central implants between junction barrier elements
JP2014138048A (ja) * 2013-01-16 2014-07-28 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP6477106B2 (ja) * 2015-03-24 2019-03-06 サンケン電気株式会社 半導体装置
JP6409681B2 (ja) * 2015-05-29 2018-10-24 株式会社デンソー 半導体装置およびその製造方法
JP6485382B2 (ja) * 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置の製造方法および化合物半導体装置
JP6740759B2 (ja) 2016-07-05 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法

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US20190288074A1 (en) 2019-09-19
US11769801B2 (en) 2023-09-26
JP2018098324A (ja) 2018-06-21
CN110050349A (zh) 2019-07-23
US20220005928A1 (en) 2022-01-06
CN110050349B (zh) 2022-05-10
US11177353B2 (en) 2021-11-16
WO2018110556A1 (ja) 2018-06-21

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