JP6668201B2 - 圧電薄膜共振器、フィルタおよびマルチプレクサ。 - Google Patents

圧電薄膜共振器、フィルタおよびマルチプレクサ。 Download PDF

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Publication number
JP6668201B2
JP6668201B2 JP2016170315A JP2016170315A JP6668201B2 JP 6668201 B2 JP6668201 B2 JP 6668201B2 JP 2016170315 A JP2016170315 A JP 2016170315A JP 2016170315 A JP2016170315 A JP 2016170315A JP 6668201 B2 JP6668201 B2 JP 6668201B2
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film
layer
region
resonance region
wiring layer
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Japanese (ja)
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JP2018037906A (ja
JP2018037906A5 (enExample
Inventor
義之 矢神
義之 矢神
龍一 岡村
龍一 岡村
良知 高岡
良知 高岡
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Priority to JP2016170315A priority Critical patent/JP6668201B2/ja
Priority to US15/667,339 priority patent/US10862448B2/en
Publication of JP2018037906A publication Critical patent/JP2018037906A/ja
Publication of JP2018037906A5 publication Critical patent/JP2018037906A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2016170315A 2016-08-31 2016-08-31 圧電薄膜共振器、フィルタおよびマルチプレクサ。 Active JP6668201B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016170315A JP6668201B2 (ja) 2016-08-31 2016-08-31 圧電薄膜共振器、フィルタおよびマルチプレクサ。
US15/667,339 US10862448B2 (en) 2016-08-31 2017-08-02 Piezoelectric thin film resonator, filter, and multiplexer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016170315A JP6668201B2 (ja) 2016-08-31 2016-08-31 圧電薄膜共振器、フィルタおよびマルチプレクサ。

Publications (3)

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JP2018037906A JP2018037906A (ja) 2018-03-08
JP2018037906A5 JP2018037906A5 (enExample) 2018-04-19
JP6668201B2 true JP6668201B2 (ja) 2020-03-18

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JP2016170315A Active JP6668201B2 (ja) 2016-08-31 2016-08-31 圧電薄膜共振器、フィルタおよびマルチプレクサ。

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Country Link
US (1) US10862448B2 (enExample)
JP (1) JP6668201B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7447372B2 (ja) * 2018-05-17 2024-03-12 サムソン エレクトロ－メカニックス カンパニーリミテッド． バルク音響共振器及びその製造方法
EP3841669A4 (en) 2018-08-20 2022-05-25 Woolsey, David An acoustic resonator
JP7290941B2 (ja) * 2018-12-27 2023-06-14 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
JP7451134B2 (ja) * 2019-10-21 2024-03-18 太陽誘電株式会社 センサデバイス
CN111010122B (zh) * 2019-10-23 2021-06-01 诺思(天津)微系统有限责任公司 电极具有空隙层的体声波谐振器、滤波器及电子设备
CN113131896B (zh) * 2019-12-31 2024-04-30 中芯集成电路（宁波）有限公司 一种薄膜压电声波谐振器及其制造方法及滤波器
CN117013985B (zh) * 2022-04-29 2024-07-05 锐石创芯(重庆)科技有限公司 滤波器、多工器、射频前端模组及滤波器的制备方法
CN118138003A (zh) * 2023-11-29 2024-06-04 深圳新声半导体有限公司 体声波谐振器及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4535841B2 (ja) 2004-10-28 2010-09-01 富士通メディアデバイス株式会社 圧電薄膜共振子及びこれを用いたフィルタ
JP4663401B2 (ja) * 2005-05-23 2011-04-06 京セラ株式会社 薄膜バルク音響波共振子およびフィルタならびに通信装置
JP5018788B2 (ja) * 2007-01-24 2012-09-05 株式会社村田製作所 圧電共振子及び圧電フィルタ
JP2008182543A (ja) * 2007-01-25 2008-08-07 Ube Ind Ltd 薄膜圧電共振器とそれを用いた薄膜圧電フィルタ
WO2009011022A1 (ja) * 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
JPWO2009013938A1 (ja) * 2007-07-20 2010-09-30 株式会社村田製作所 圧電共振子及び圧電フィルタ装置
JP5246454B2 (ja) * 2009-02-20 2013-07-24 宇部興産株式会社 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ
JP5360432B2 (ja) * 2011-01-27 2013-12-04 株式会社村田製作所 圧電デバイス
JP5918522B2 (ja) * 2011-12-12 2016-05-18 太陽誘電株式会社 フィルタおよびデュプレクサ

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US20180062609A1 (en) 2018-03-01
JP2018037906A (ja) 2018-03-08
US10862448B2 (en) 2020-12-08

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