JP6656162B2 - 研磨パッド及びシステム、並びにその作製方法及び使用方法 - Google Patents
研磨パッド及びシステム、並びにその作製方法及び使用方法 Download PDFInfo
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- JP6656162B2 JP6656162B2 JP2016560455A JP2016560455A JP6656162B2 JP 6656162 B2 JP6656162 B2 JP 6656162B2 JP 2016560455 A JP2016560455 A JP 2016560455A JP 2016560455 A JP2016560455 A JP 2016560455A JP 6656162 B2 JP6656162 B2 JP 6656162B2
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/241—Methods
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461974848P | 2014-04-03 | 2014-04-03 | |
| US61/974,848 | 2014-04-03 | ||
| US201462052729P | 2014-09-19 | 2014-09-19 | |
| US62/052,729 | 2014-09-19 | ||
| PCT/US2015/023576 WO2015153601A1 (en) | 2014-04-03 | 2015-03-31 | Polishing pads and systems and methods of making and using the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017510470A JP2017510470A (ja) | 2017-04-13 |
| JP2017510470A5 JP2017510470A5 (enExample) | 2019-07-04 |
| JP6656162B2 true JP6656162B2 (ja) | 2020-03-04 |
Family
ID=52823890
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016560455A Active JP6656162B2 (ja) | 2014-04-03 | 2015-03-31 | 研磨パッド及びシステム、並びにその作製方法及び使用方法 |
| JP2016560383A Active JP6640106B2 (ja) | 2014-04-03 | 2015-03-31 | 研磨パッド及びシステム、並びにその作製方法及び使用方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016560383A Active JP6640106B2 (ja) | 2014-04-03 | 2015-03-31 | 研磨パッド及びシステム、並びにその作製方法及び使用方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10071461B2 (enExample) |
| EP (2) | EP3126092B1 (enExample) |
| JP (2) | JP6656162B2 (enExample) |
| KR (2) | KR102347711B1 (enExample) |
| CN (2) | CN106163740B (enExample) |
| SG (2) | SG11201608134YA (enExample) |
| TW (2) | TWI655998B (enExample) |
| WO (2) | WO2015153601A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104349893B (zh) * | 2012-06-01 | 2017-07-18 | 科思创德国股份有限公司 | 作为反射器的多层结构 |
| KR102252673B1 (ko) * | 2013-09-25 | 2021-05-18 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 다층화된 폴리싱 패드 |
| KR102347711B1 (ko) | 2014-04-03 | 2022-01-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법 |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| CN107078048B (zh) | 2014-10-17 | 2021-08-13 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
| US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
| US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| TWI769988B (zh) | 2015-10-07 | 2022-07-11 | 美商3M新設資產公司 | 拋光墊與系統及其製造與使用方法 |
| KR20230169424A (ko) | 2015-10-30 | 2023-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| TWI629297B (zh) * | 2016-07-05 | 2018-07-11 | 智勝科技股份有限公司 | 研磨層及其製造方法以及研磨方法 |
| JP6777475B2 (ja) * | 2016-09-07 | 2020-10-28 | 富士紡ホールディングス株式会社 | 研磨パッド |
| TWI626117B (zh) * | 2017-01-19 | 2018-06-11 | 智勝科技股份有限公司 | 研磨墊及研磨方法 |
| KR102329099B1 (ko) * | 2017-01-20 | 2021-11-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp 응용들을 위한 얇은 플라스틱 연마 물품 |
| WO2019012389A1 (en) | 2017-07-11 | 2019-01-17 | 3M Innovative Properties Company | ABRASIVE ARTICLES COMPRISING ADAPTABLE COATINGS AND POLISHING SYSTEM MANUFACTURED THEREFROM |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| WO2019026021A1 (en) * | 2017-08-04 | 2019-02-07 | 3M Innovative Properties Company | MICRO-REPLICATED POLISHING SURFACE WITH IMPROVED COPLANARITY |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
| JP7273796B2 (ja) * | 2017-08-25 | 2023-05-15 | スリーエム イノベイティブ プロパティズ カンパニー | 表面突起研磨パッド |
| US11685013B2 (en) * | 2018-01-24 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad for chemical mechanical planarization |
| US11878388B2 (en) * | 2018-06-15 | 2024-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad, polishing apparatus and method of manufacturing semiconductor package using the same |
| CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
| KR20200028097A (ko) * | 2018-09-06 | 2020-03-16 | 에스케이실트론 주식회사 | 웨이퍼 연마 장치용 연마패드 |
| US11331767B2 (en) | 2019-02-01 | 2022-05-17 | Micron Technology, Inc. | Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods |
| KR102222851B1 (ko) | 2019-05-29 | 2021-03-08 | 한국생산기술연구원 | 그루브가 형성된 연마용 패드 |
| KR102440315B1 (ko) | 2020-05-11 | 2022-09-06 | 한국생산기술연구원 | 패턴구조를 갖는 화학기계적 연마용 패드 및 이의 제조방법 |
| KR102186895B1 (ko) | 2019-05-29 | 2020-12-07 | 한국생산기술연구원 | 마이크로 패턴을 갖는 연마용 패드의 설계방법 |
| KR102221514B1 (ko) | 2019-05-29 | 2021-03-03 | 한국생산기술연구원 | 연마액의 유동 저항 구조를 갖는 연마용 패드 |
| KR102674356B1 (ko) * | 2019-06-19 | 2024-06-11 | 주식회사 쿠라레 | 연마 패드, 연마 패드의 제조 방법 및 연마 방법 |
| CN114599482A (zh) * | 2019-11-04 | 2022-06-07 | 3M创新有限公司 | 抛光制品、抛光系统和抛光方法 |
| US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
| US11833638B2 (en) * | 2020-03-25 | 2023-12-05 | Rohm and Haas Electronic Materials Holding, Inc. | CMP polishing pad with polishing elements on supports |
| US12138738B2 (en) * | 2020-06-19 | 2024-11-12 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
| US11806829B2 (en) * | 2020-06-19 | 2023-11-07 | Applied Materials, Inc. | Advanced polishing pads and related polishing pad manufacturing methods |
| US11759909B2 (en) * | 2020-06-19 | 2023-09-19 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
| WO2021260629A1 (en) * | 2020-06-25 | 2021-12-30 | 3M Innovative Properties Company | Polishing pads and systems for and methods of using same |
| JP7550583B2 (ja) * | 2020-09-23 | 2024-09-13 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| JP7553299B2 (ja) * | 2020-09-23 | 2024-09-18 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| CN114425743A (zh) * | 2020-10-28 | 2022-05-03 | 中国科学院微电子研究所 | 一种抛光垫及化学机械抛光设备 |
| WO2022091069A1 (en) * | 2020-11-02 | 2022-05-05 | 3M Innovative Properties Company | Polyurethanes, polishing articles and polishing systems therefrom and method of use thereof |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
| CN117355554A (zh) * | 2021-05-28 | 2024-01-05 | 3M创新有限公司 | 聚氨酯、由其制备的抛光制品和抛光系统及其使用方法 |
| CN113246016A (zh) * | 2021-06-09 | 2021-08-13 | 广东工业大学 | 一种多层多功能cmp抛光垫及其制备方法和应用 |
| WO2024023618A1 (en) * | 2022-07-29 | 2024-02-01 | 3M Innovative Properties Company | Polyurethanes, polishing articles and polishing systems therefrom and method of use thereof |
| US12447582B2 (en) | 2022-12-22 | 2025-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with fluorinated polymer and multimodal groove pattern |
| WO2025093967A1 (en) * | 2023-10-31 | 2025-05-08 | 3M Innovative Properties Company | Hydrophobic surface modification of polishing pads |
| WO2025177101A1 (en) | 2024-02-23 | 2025-08-28 | 3M Innovative Properties Company | A polishing article and system |
Family Cites Families (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5143528B2 (enExample) | 1972-12-02 | 1976-11-22 | ||
| AT347283B (de) * | 1975-03-07 | 1978-12-27 | Collo Gmbh | Schaumstoffkoerper fuer reinigungs-, scheuer- und/oder polierzwecke u. dgl. |
| US5348788A (en) * | 1991-01-30 | 1994-09-20 | Interpore Orthopaedics, Inc. | Mesh sheet with microscopic projections and holes |
| US5152917B1 (en) | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
| US5212910A (en) | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
| US5435816A (en) | 1993-01-14 | 1995-07-25 | Minnesota Mining And Manufacturing Company | Method of making an abrasive article |
| US5441598A (en) * | 1993-12-16 | 1995-08-15 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| US6099954A (en) | 1995-04-24 | 2000-08-08 | Rodel Holdings, Inc. | Polishing material and method of polishing a surface |
| WO1996033839A1 (en) | 1995-04-26 | 1996-10-31 | Minnesota Mining And Manufacturing Company | Method and apparatus for step and repeat exposures |
| US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| JP3324643B2 (ja) | 1995-10-25 | 2002-09-17 | 日本電気株式会社 | 研磨パッド |
| US5778481A (en) | 1996-02-15 | 1998-07-14 | International Business Machines Corporation | Silicon wafer cleaning and polishing pads |
| US5876268A (en) * | 1997-01-03 | 1999-03-02 | Minnesota Mining And Manufacturing Company | Method and article for the production of optical quality surfaces on glass |
| JPH10225864A (ja) | 1997-02-17 | 1998-08-25 | Sony Corp | 研磨パッドとその製造方法並びにその研磨パッドを用いたウエハの研磨方法 |
| US5882251A (en) * | 1997-08-19 | 1999-03-16 | Lsi Logic Corporation | Chemical mechanical polishing pad slurry distribution grooves |
| US6780095B1 (en) * | 1997-12-30 | 2004-08-24 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
| US6139402A (en) * | 1997-12-30 | 2000-10-31 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
| JPH11267961A (ja) | 1998-03-23 | 1999-10-05 | Sony Corp | 研磨パッド、研磨装置および研磨方法 |
| US6218306B1 (en) * | 1998-04-22 | 2001-04-17 | Applied Materials, Inc. | Method of chemical mechanical polishing a metal layer |
| US6372323B1 (en) | 1998-10-05 | 2002-04-16 | 3M Innovative Properties Company | Slip control article for wet and dry applications |
| US6206759B1 (en) | 1998-11-30 | 2001-03-27 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines |
| JP2000158327A (ja) * | 1998-12-02 | 2000-06-13 | Rohm Co Ltd | 化学的機械的研磨用研磨布およびそれを用いた化学的機械的研磨装置 |
| US6354915B1 (en) * | 1999-01-21 | 2002-03-12 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
| JP2000301450A (ja) * | 1999-04-19 | 2000-10-31 | Rohm Co Ltd | Cmp研磨パッドおよびそれを用いたcmp処理装置 |
| US6234875B1 (en) | 1999-06-09 | 2001-05-22 | 3M Innovative Properties Company | Method of modifying a surface |
| US6364749B1 (en) | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
| US6443809B1 (en) * | 1999-11-16 | 2002-09-03 | Chartered Semiconductor Manufacturing, Ltd. | Polishing apparatus and method for forming an integrated circuit |
| US6390891B1 (en) | 2000-04-26 | 2002-05-21 | Speedfam-Ipec Corporation | Method and apparatus for improved stability chemical mechanical polishing |
| EP1284842B1 (en) * | 2000-05-27 | 2005-10-19 | Rohm and Haas Electronic Materials CMP Holdings, Inc. | Polishing pads for chemical mechanical planarization |
| WO2001096434A1 (en) * | 2000-06-13 | 2001-12-20 | Toyo Tire & Rubber Co., Ltd. | Process for producing polyurethane foam, polyurethane foam, and abrasive sheet |
| US6852766B1 (en) | 2000-06-15 | 2005-02-08 | 3M Innovative Properties Company | Multiphoton photosensitization system |
| US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
| US6612916B2 (en) | 2001-01-08 | 2003-09-02 | 3M Innovative Properties Company | Article suitable for chemical mechanical planarization processes |
| US20020098789A1 (en) | 2001-01-19 | 2002-07-25 | Peter A. Burke | Polishing pad and methods for improved pad surface and pad interior characteristics |
| JP2002246343A (ja) | 2001-02-13 | 2002-08-30 | Nikon Corp | 研磨装置、この研磨装置を用いた半導体デバイス製造方法及びこの半導体デバイス製造方法により製造された半導体デバイス |
| JP3359629B1 (ja) * | 2001-04-09 | 2002-12-24 | 東洋紡績株式会社 | ポリウレタン組成物からなる研磨パッド |
| CN100540221C (zh) * | 2001-11-13 | 2009-09-16 | 东洋橡胶工业株式会社 | 研磨垫及其制造方法 |
| KR100877390B1 (ko) * | 2001-11-13 | 2009-01-07 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
| JP2003205451A (ja) | 2002-01-07 | 2003-07-22 | Hitachi Ltd | 研磨パッド |
| US20030134581A1 (en) * | 2002-01-11 | 2003-07-17 | Wang Hsing Maw | Device for chemical mechanical polishing |
| JP2003225855A (ja) | 2002-01-30 | 2003-08-12 | Hitachi Chem Co Ltd | 研磨用パッド及びそれを用いた被研磨物の研磨方法 |
| JP2003334753A (ja) | 2002-05-15 | 2003-11-25 | Rodel Nitta Co | 研磨パッド |
| US7399516B2 (en) | 2002-05-23 | 2008-07-15 | Novellus Systems, Inc. | Long-life workpiece surface influencing device structure and manufacturing method |
| KR100465649B1 (ko) | 2002-09-17 | 2005-01-13 | 한국포리올 주식회사 | 일체형 연마 패드 및 그 제조 방법 |
| JP2004140178A (ja) | 2002-10-17 | 2004-05-13 | Renesas Technology Corp | 化学的機械研磨装置 |
| KR100577470B1 (ko) | 2002-12-28 | 2006-05-10 | 에스케이씨 주식회사 | 다수의 투과창을 갖는 연마 패드 |
| JP3910921B2 (ja) | 2003-02-06 | 2007-04-25 | 株式会社東芝 | 研磨布および半導体装置の製造方法 |
| JP4659338B2 (ja) * | 2003-02-12 | 2011-03-30 | Hoya株式会社 | 情報記録媒体用ガラス基板の製造方法並びにそれに使用する研磨パッド |
| US20060189269A1 (en) * | 2005-02-18 | 2006-08-24 | Roy Pradip K | Customized polishing pads for CMP and methods of fabrication and use thereof |
| WO2005000529A1 (en) * | 2003-06-03 | 2005-01-06 | Neopad Technologies Corporation | Synthesis of a functionally graded pad for chemical mechanical planarization |
| JP4790973B2 (ja) * | 2003-03-28 | 2011-10-12 | Hoya株式会社 | 研磨パッドを使用した情報記録媒体用ガラス基板の製造方法及びその方法で得られた情報記録媒体用ガラス基板 |
| US6893328B2 (en) | 2003-04-23 | 2005-05-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Conductive polishing pad with anode and cathode |
| KR20050012661A (ko) | 2003-07-26 | 2005-02-02 | 매그나칩 반도체 유한회사 | 연마패드 형성방법및 연마패드 구조 |
| US6942549B2 (en) | 2003-10-29 | 2005-09-13 | International Business Machines Corporation | Two-sided chemical mechanical polishing pad for semiconductor processing |
| KR100545795B1 (ko) * | 2004-02-17 | 2006-01-24 | 에스케이씨 주식회사 | 연마 패드의 기재 패드와 이를 이용한 다층 패드 |
| JP2007521980A (ja) | 2004-02-17 | 2007-08-09 | エスケーシー カンパニー リミテッド | 研磨パッドのベースパッド及びそれを含む多層パッド |
| JP2005342881A (ja) | 2004-05-07 | 2005-12-15 | Nitta Haas Inc | 研磨パッド、研磨方法および研磨装置 |
| US20050277376A1 (en) | 2004-06-11 | 2005-12-15 | Harvey Pinder | Single component pad backer for polishing head of an orbital chemical mechanical polishing machine and method therefor |
| JP3769581B1 (ja) * | 2005-05-18 | 2006-04-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法 |
| EP1848569B1 (en) * | 2005-02-18 | 2016-11-23 | NexPlanar Corporation | Customized polishing pads for cmp and method of using the same |
| TWI378844B (en) | 2005-08-18 | 2012-12-11 | Rohm & Haas Elect Mat | Polishing pad and method of manufacture |
| US7226345B1 (en) * | 2005-12-09 | 2007-06-05 | The Regents Of The University Of California | CMP pad with designed surface features |
| US7241206B1 (en) * | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
| US20080003935A1 (en) | 2006-07-03 | 2008-01-03 | Chung-Chih Feng | Polishing pad having surface texture |
| TWI409136B (zh) | 2006-07-19 | 2013-09-21 | Innopad Inc | 表面具微溝槽之化學機械平坦化墊 |
| US20080146129A1 (en) | 2006-12-08 | 2008-06-19 | Makoto Kouzuma | Fast break-in polishing pad and a method of making the same |
| JP5297096B2 (ja) | 2007-10-03 | 2013-09-25 | 富士紡ホールディングス株式会社 | 研磨布 |
| JP5143528B2 (ja) | 2007-10-25 | 2013-02-13 | 株式会社クラレ | 研磨パッド |
| US8398462B2 (en) * | 2008-02-21 | 2013-03-19 | Chien-Min Sung | CMP pads and method of creating voids in-situ therein |
| JP2009283538A (ja) | 2008-05-20 | 2009-12-03 | Jsr Corp | 化学機械研磨パッドおよび化学機械研磨方法 |
| CN102131618A (zh) | 2008-06-26 | 2011-07-20 | 3M创新有限公司 | 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法 |
| JP2010056184A (ja) | 2008-08-27 | 2010-03-11 | Jsr Corp | 化学機械研磨パッドおよび化学機械研磨方法 |
| WO2010032715A1 (ja) | 2008-09-17 | 2010-03-25 | 株式会社クラレ | 研磨パッド |
| KR101615787B1 (ko) | 2008-12-30 | 2016-04-26 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 나노구조화 표면의 제조 방법 |
| US20100188751A1 (en) | 2009-01-29 | 2010-07-29 | 3M Innovative Properties Company | Optical films with internally conformable layers and method of making the films |
| KR101609128B1 (ko) | 2009-08-13 | 2016-04-05 | 삼성전자주식회사 | 연마 패드 및 이를 갖는 화학 기계적 연마 장치 |
| KR20120112662A (ko) | 2009-12-30 | 2012-10-11 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 유기 미립자 로딩된 폴리싱 패드 및 이를 제조 및 사용하는 방법 |
| CN102686362A (zh) | 2009-12-30 | 2012-09-19 | 3M创新有限公司 | 包括分相共混聚合物的抛光垫及其制备和使用方法 |
| KR101721721B1 (ko) | 2010-05-03 | 2017-03-30 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 나노구조의 제조 방법 |
| US20120171935A1 (en) * | 2010-12-20 | 2012-07-05 | Diamond Innovations, Inc. | CMP PAD Conditioning Tool |
| JP5711525B2 (ja) | 2010-12-22 | 2015-04-30 | 富士紡ホールディングス株式会社 | 研磨パッドおよび研磨パッドの製造方法 |
| US8808573B2 (en) | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US20120302148A1 (en) * | 2011-05-23 | 2012-11-29 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
| CN103782371A (zh) | 2011-09-16 | 2014-05-07 | 东丽株式会社 | 研磨垫 |
| SG10201508090WA (en) * | 2011-11-29 | 2015-10-29 | Nexplanar Corp | Polishing pad with foundation layer and polishing surface layer |
| JP5917236B2 (ja) | 2012-03-30 | 2016-05-11 | 富士紡ホールディングス株式会社 | 研磨パッド用シート及びその製造方法、研磨パッド及びその製造方法、並びに研磨方法 |
| US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
| JP2014054719A (ja) | 2012-09-14 | 2014-03-27 | Toho Engineering Kk | 研磨パッド再生加工装置 |
| WO2014051104A1 (ja) * | 2012-09-28 | 2014-04-03 | 富士紡ホールディングス株式会社 | 研磨パッド |
| US10160092B2 (en) | 2013-03-14 | 2018-12-25 | Cabot Microelectronics Corporation | Polishing pad having polishing surface with continuous protrusions having tapered sidewalls |
| JP6111797B2 (ja) | 2013-03-29 | 2017-04-12 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨パッドの製造方法 |
| BR112016001710A2 (pt) | 2013-07-26 | 2017-08-01 | 3M Innovative Properties Co | método para fabricação de uma nanoestrutura e artigos nanoestruturados |
| KR102347711B1 (ko) * | 2014-04-03 | 2022-01-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법 |
-
2015
- 2015-03-31 KR KR1020167030479A patent/KR102347711B1/ko active Active
- 2015-03-31 SG SG11201608134YA patent/SG11201608134YA/en unknown
- 2015-03-31 SG SG11201608219WA patent/SG11201608219WA/en unknown
- 2015-03-31 KR KR1020167030482A patent/KR102350350B1/ko active Active
- 2015-03-31 JP JP2016560455A patent/JP6656162B2/ja active Active
- 2015-03-31 EP EP15715634.0A patent/EP3126092B1/en active Active
- 2015-03-31 CN CN201580018328.9A patent/CN106163740B/zh active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| EP3126092B1 (en) | 2022-08-17 |
| WO2015153601A1 (en) | 2015-10-08 |
| TW201542316A (zh) | 2015-11-16 |
| CN106163740B (zh) | 2019-07-09 |
| SG11201608134YA (en) | 2016-10-28 |
| CN106132630B (zh) | 2019-11-26 |
| JP2017513722A (ja) | 2017-06-01 |
| US10252396B2 (en) | 2019-04-09 |
| TWI655998B (zh) | 2019-04-11 |
| CN106163740A (zh) | 2016-11-23 |
| US10071461B2 (en) | 2018-09-11 |
| EP3126093B1 (en) | 2022-08-17 |
| EP3126093A1 (en) | 2017-02-08 |
| KR102350350B1 (ko) | 2022-01-14 |
| KR20160140874A (ko) | 2016-12-07 |
| JP2017510470A (ja) | 2017-04-13 |
| TWI652142B (zh) | 2019-03-01 |
| CN106132630A (zh) | 2016-11-16 |
| WO2015153597A1 (en) | 2015-10-08 |
| KR20160142346A (ko) | 2016-12-12 |
| US20170173758A1 (en) | 2017-06-22 |
| KR102347711B1 (ko) | 2022-01-06 |
| SG11201608219WA (en) | 2016-10-28 |
| JP6640106B2 (ja) | 2020-02-05 |
| US20170182629A1 (en) | 2017-06-29 |
| TW201542318A (zh) | 2015-11-16 |
| EP3126092A1 (en) | 2017-02-08 |
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