JP6644051B2 - 高温処理用静電チャックアセンブリ - Google Patents
高温処理用静電チャックアセンブリ Download PDFInfo
- Publication number
- JP6644051B2 JP6644051B2 JP2017502661A JP2017502661A JP6644051B2 JP 6644051 B2 JP6644051 B2 JP 6644051B2 JP 2017502661 A JP2017502661 A JP 2017502661A JP 2017502661 A JP2017502661 A JP 2017502661A JP 6644051 B2 JP6644051 B2 JP 6644051B2
- Authority
- JP
- Japan
- Prior art keywords
- pack
- plate
- cooling plate
- gasket
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title description 26
- 238000001816 cooling Methods 0.000 claims description 120
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 35
- 229920005548 perfluoropolymer Polymers 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000012546 transfer Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims 4
- 239000010439 graphite Substances 0.000 claims 4
- 239000000463 material Substances 0.000 description 42
- 239000007789 gas Substances 0.000 description 39
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 239000010410 layer Substances 0.000 description 18
- 239000011156 metal matrix composite Substances 0.000 description 15
- 239000011888 foil Substances 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005524 ceramic coating Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001335 Galvanized steel Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000008397 galvanized steel Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910000946 Y alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- NVIVJPRCKQTWLY-UHFFFAOYSA-N cobalt nickel Chemical compound [Co][Ni][Co] NVIVJPRCKQTWLY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000410 poly[9,9-bis((6'-N,N,N-trimethylammonium)hexyl)fluorenylene phenylene dibromide] polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Manipulator (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462065503P | 2014-10-17 | 2014-10-17 | |
US62/065,503 | 2014-10-17 | ||
US14/878,955 US10008404B2 (en) | 2014-10-17 | 2015-10-08 | Electrostatic chuck assembly for high temperature processes |
US14/878,955 | 2015-10-08 | ||
PCT/US2015/054982 WO2016060960A1 (en) | 2014-10-17 | 2015-10-09 | Electrostatic chuck assembly for high temperature processes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020000645A Division JP7030143B2 (ja) | 2014-10-17 | 2020-01-07 | 高温処理用静電チャックアセンブリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017538278A JP2017538278A (ja) | 2017-12-21 |
JP6644051B2 true JP6644051B2 (ja) | 2020-02-12 |
Family
ID=55747170
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017502661A Active JP6644051B2 (ja) | 2014-10-17 | 2015-10-09 | 高温処理用静電チャックアセンブリ |
JP2020000645A Active JP7030143B2 (ja) | 2014-10-17 | 2020-01-07 | 高温処理用静電チャックアセンブリ |
JP2021204088A Active JP7242823B2 (ja) | 2014-10-17 | 2021-12-16 | 高温処理用静電チャックアセンブリ |
JP2022079222A Active JP7355884B2 (ja) | 2014-10-17 | 2022-05-13 | 高温処理用静電チャックアセンブリ |
JP2023154168A Pending JP2023171819A (ja) | 2014-10-17 | 2023-09-21 | 高温処理用静電チャックアセンブリ |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020000645A Active JP7030143B2 (ja) | 2014-10-17 | 2020-01-07 | 高温処理用静電チャックアセンブリ |
JP2021204088A Active JP7242823B2 (ja) | 2014-10-17 | 2021-12-16 | 高温処理用静電チャックアセンブリ |
JP2022079222A Active JP7355884B2 (ja) | 2014-10-17 | 2022-05-13 | 高温処理用静電チャックアセンブリ |
JP2023154168A Pending JP2023171819A (ja) | 2014-10-17 | 2023-09-21 | 高温処理用静電チャックアセンブリ |
Country Status (6)
Country | Link |
---|---|
US (2) | US10008404B2 (zh) |
JP (5) | JP6644051B2 (zh) |
KR (4) | KR102506457B1 (zh) |
CN (2) | CN106663647B (zh) |
TW (2) | TWI713139B (zh) |
WO (1) | WO2016060960A1 (zh) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9543171B2 (en) * | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10008404B2 (en) | 2014-10-17 | 2018-06-26 | Applied Materials, Inc. | Electrostatic chuck assembly for high temperature processes |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10083853B2 (en) * | 2015-10-19 | 2018-09-25 | Lam Research Corporation | Electrostatic chuck design for cooling-gas light-up prevention |
KR20180112794A (ko) * | 2016-01-22 | 2018-10-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 전도성 층들이 매립된 세라믹 샤워헤드 |
JP6552429B2 (ja) * | 2016-02-05 | 2019-07-31 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10249526B2 (en) | 2016-03-04 | 2019-04-02 | Applied Materials, Inc. | Substrate support assembly for high temperature processes |
US10340171B2 (en) * | 2016-05-18 | 2019-07-02 | Lam Research Corporation | Permanent secondary erosion containment for electrostatic chuck bonds |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11127619B2 (en) * | 2016-06-07 | 2021-09-21 | Applied Materials, Inc. | Workpiece carrier for high power with enhanced edge sealing |
JP6786439B2 (ja) * | 2016-06-28 | 2020-11-18 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10410900B2 (en) * | 2016-08-05 | 2019-09-10 | Applied Materials, Inc. | Precision screen printing with sub-micron uniformity of metallization materials on green sheet ceramic |
KR101694754B1 (ko) * | 2016-09-08 | 2017-01-11 | (주)브이앤아이솔루션 | 정전척 및 그 제조방법 |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
JP6829087B2 (ja) * | 2017-01-27 | 2021-02-10 | 京セラ株式会社 | 試料保持具 |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US11276590B2 (en) * | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US20180337026A1 (en) * | 2017-05-19 | 2018-11-22 | Applied Materials, Inc. | Erosion resistant atomic layer deposition coatings |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
CN108987323B (zh) * | 2017-06-05 | 2020-03-31 | 北京北方华创微电子装备有限公司 | 一种承载装置及半导体加工设备 |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10483147B2 (en) | 2017-11-21 | 2019-11-19 | Wallow Electric Manufacturing Company | Dual-purpose vias for use in ceramic pedestals |
CN109860073B (zh) * | 2017-11-30 | 2020-10-16 | 上海微电子装备(集团)股份有限公司 | 一种加热装置及加热方法 |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
KR102655866B1 (ko) | 2018-01-31 | 2024-04-05 | 램 리써치 코포레이션 | 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리 |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
US11664262B2 (en) | 2018-04-05 | 2023-05-30 | Lam Research Corporation | Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10957572B2 (en) * | 2018-05-02 | 2021-03-23 | Applied Materials, Inc. | Multi-zone gasket for substrate support assembly |
JP7090465B2 (ja) | 2018-05-10 | 2022-06-24 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10867829B2 (en) * | 2018-07-17 | 2020-12-15 | Applied Materials, Inc. | Ceramic hybrid insulator plate |
CN108866503A (zh) * | 2018-08-30 | 2018-11-23 | 东莞市典雅五金制品有限公司 | 一种加热旋转衬底台 |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US20200176232A1 (en) * | 2018-12-04 | 2020-06-04 | Nanya Technology Corporation | Etching device and operating method thereof |
US11562890B2 (en) | 2018-12-06 | 2023-01-24 | Applied Materials, Inc. | Corrosion resistant ground shield of processing chamber |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US20220181183A1 (en) * | 2019-03-29 | 2022-06-09 | Kyocera Corporation | Gas plug, electrostatic attraction member, and plasma treatment device |
KR20240115347A (ko) | 2019-05-24 | 2024-07-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 접합 층 보호가 개선된 기판 지지 캐리어 |
US11894255B2 (en) * | 2019-07-30 | 2024-02-06 | Applied Materials, Inc. | Sheath and temperature control of process kit |
KR102288733B1 (ko) * | 2019-09-25 | 2021-08-11 | (주)에스티아이 | 기판처리장치 |
CN112908919B (zh) * | 2019-12-04 | 2024-07-09 | 中微半导体设备(上海)股份有限公司 | 静电吸盘装置及包括该静电吸盘装置的等离子体处理装置 |
CN111128845B (zh) * | 2019-12-16 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 应用于薄膜沉积装置的托盘 |
JP7264102B2 (ja) | 2020-04-17 | 2023-04-25 | 株式会社デンソー | 位置検出装置 |
CN111607785A (zh) * | 2020-05-26 | 2020-09-01 | 北京北方华创微电子装备有限公司 | 一种加热装置及半导体加工设备 |
US20210381101A1 (en) * | 2020-06-03 | 2021-12-09 | Applied Materials, Inc. | Substrate processing system |
JP7404191B2 (ja) * | 2020-08-25 | 2023-12-25 | 日本特殊陶業株式会社 | 保持装置 |
JP7386142B2 (ja) * | 2020-08-27 | 2023-11-24 | 日本特殊陶業株式会社 | 保持装置 |
CN213951334U (zh) * | 2020-10-26 | 2021-08-13 | 北京北方华创微电子装备有限公司 | 一种晶片承载机构及半导体工艺设备 |
US20220282371A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Electrostatic chuck with metal shaft |
TWI768786B (zh) * | 2021-03-24 | 2022-06-21 | 天虹科技股份有限公司 | 可準確調整溫度的承載盤及應用該承載盤的薄膜沉積裝置 |
CN115142045B (zh) * | 2021-03-29 | 2023-12-19 | 鑫天虹(厦门)科技有限公司 | 可准确调整温度的承载盘及薄膜沉积装置 |
WO2022209619A1 (ja) * | 2021-04-01 | 2022-10-06 | 日本碍子株式会社 | ウエハ支持台及びrfロッド |
JP2023161887A (ja) * | 2022-04-26 | 2023-11-08 | 日本碍子株式会社 | ウエハ載置台 |
KR102700261B1 (ko) * | 2022-06-28 | 2024-08-28 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 배치대 |
KR20240091132A (ko) * | 2022-07-07 | 2024-06-21 | 니혼도꾸슈도교 가부시키가이샤 | 유지 장치 |
WO2024100752A1 (ja) * | 2022-11-08 | 2024-05-16 | 日本碍子株式会社 | 半導体製造装置用部材 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4305567A (en) | 1977-08-29 | 1981-12-15 | Rockwell International Corporation | Valve stem seal |
US4273148A (en) | 1980-04-21 | 1981-06-16 | Litton Industrial Products, Inc. | Stem seal for a fire safe ball valve |
US5421594A (en) * | 1991-02-14 | 1995-06-06 | Marine & Petroleum Mfg., Inc. | Gasket |
US5535090A (en) | 1994-03-03 | 1996-07-09 | Sherman; Arthur | Electrostatic chuck |
JPH09213781A (ja) | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
US6019164A (en) | 1997-12-31 | 2000-02-01 | Temptronic Corporation | Workpiece chuck |
US6219219B1 (en) | 1998-09-30 | 2001-04-17 | Applied Materials, Inc. | Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system |
JP3159306B2 (ja) * | 1998-12-17 | 2001-04-23 | 防衛庁技術研究本部長 | 航走体船種識別装置及びその方法 |
US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
EP1124256A1 (en) | 1999-11-10 | 2001-08-16 | Ibiden Co., Ltd. | Ceramic substrate |
KR20010111058A (ko) * | 2000-06-09 | 2001-12-15 | 조셉 제이. 스위니 | 전체 영역 온도 제어 정전기 척 및 그 제조방법 |
US6503368B1 (en) | 2000-06-29 | 2003-01-07 | Applied Materials Inc. | Substrate support having bonded sections and method |
JP3530481B2 (ja) | 2000-10-31 | 2004-05-24 | ジー・ピー・ダイキョー株式会社 | 樹脂製インテークマニホールド、及びその製造方法 |
US7846254B2 (en) | 2003-05-16 | 2010-12-07 | Applied Materials, Inc. | Heat transfer assembly |
JP4278046B2 (ja) | 2003-11-10 | 2009-06-10 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | ヒータ機構付き静電チャック |
US7697260B2 (en) * | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
US20060096946A1 (en) | 2004-11-10 | 2006-05-11 | General Electric Company | Encapsulated wafer processing device and process for making thereof |
CN1815700A (zh) * | 2005-02-02 | 2006-08-09 | 中芯国际集成电路制造(上海)有限公司 | 晶片处理装置及晶片处理方法 |
JP4783213B2 (ja) | 2005-06-09 | 2011-09-28 | 日本碍子株式会社 | 静電チャック |
US20080029032A1 (en) | 2006-08-01 | 2008-02-07 | Sun Jennifer Y | Substrate support with protective layer for plasma resistance |
TWI345285B (en) | 2006-10-06 | 2011-07-11 | Ngk Insulators Ltd | Substrate supporting member |
US7589950B2 (en) * | 2006-10-13 | 2009-09-15 | Applied Materials, Inc. | Detachable electrostatic chuck having sealing assembly |
JP5660753B2 (ja) * | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマエッチング用高温カソード |
JP2009164483A (ja) * | 2008-01-09 | 2009-07-23 | Panasonic Corp | 半導体装置の製造方法および半導体基板処理装置 |
US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
EP2321846A4 (en) * | 2008-08-12 | 2012-03-14 | Applied Materials Inc | ELECTROSTATIC FODDER ASSEMBLY |
KR20130071441A (ko) | 2010-05-28 | 2013-06-28 | 액셀리스 테크놀러지스, 인크. | 정전 척을 위한 열 팽창 계수 정합 |
JP6195519B2 (ja) | 2010-08-06 | 2017-09-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 静電チャック及びその使用方法 |
US9969022B2 (en) * | 2010-09-28 | 2018-05-15 | Applied Materials, Inc. | Vacuum process chamber component and methods of making |
US20120100379A1 (en) * | 2010-10-20 | 2012-04-26 | Greene, Tweed Of Delaware, Inc. | Fluoroelastomer bonding compositions suitable for high-temperature applications |
JP6109832B2 (ja) | 2011-09-30 | 2017-04-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 静電チャック |
US20130276980A1 (en) * | 2012-04-23 | 2013-10-24 | Dmitry Lubomirsky | Esc with cooling base |
JP5989593B2 (ja) | 2012-04-27 | 2016-09-07 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP5861563B2 (ja) * | 2012-05-31 | 2016-02-16 | 住友電気工業株式会社 | ウエハ加熱用ヒータ |
US9685356B2 (en) | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
JP6080571B2 (ja) | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6182082B2 (ja) | 2013-03-15 | 2017-08-16 | 日本碍子株式会社 | 緻密質複合材料、その製法及び半導体製造装置用部材 |
JP6182084B2 (ja) | 2013-03-25 | 2017-08-16 | 日本碍子株式会社 | 緻密質複合材料、その製法、接合体及び半導体製造装置用部材 |
JP5633766B2 (ja) | 2013-03-29 | 2014-12-03 | Toto株式会社 | 静電チャック |
US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
US10008404B2 (en) | 2014-10-17 | 2018-06-26 | Applied Materials, Inc. | Electrostatic chuck assembly for high temperature processes |
US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
US10957572B2 (en) * | 2018-05-02 | 2021-03-23 | Applied Materials, Inc. | Multi-zone gasket for substrate support assembly |
-
2015
- 2015-10-08 US US14/878,955 patent/US10008404B2/en active Active
- 2015-10-09 CN CN201580041355.8A patent/CN106663647B/zh active Active
- 2015-10-09 KR KR1020227005268A patent/KR102506457B1/ko active IP Right Grant
- 2015-10-09 KR KR1020247030222A patent/KR20240141842A/ko active Search and Examination
- 2015-10-09 WO PCT/US2015/054982 patent/WO2016060960A1/en active Application Filing
- 2015-10-09 KR KR1020177002488A patent/KR102415779B1/ko active IP Right Grant
- 2015-10-09 CN CN202010783977.0A patent/CN111916387A/zh active Pending
- 2015-10-09 JP JP2017502661A patent/JP6644051B2/ja active Active
- 2015-10-09 KR KR1020237006951A patent/KR102706817B1/ko active IP Right Grant
- 2015-10-13 TW TW108112095A patent/TWI713139B/zh active
- 2015-10-13 TW TW104133552A patent/TWI660453B/zh active
-
2018
- 2018-02-28 US US15/908,654 patent/US10872800B2/en active Active
-
2020
- 2020-01-07 JP JP2020000645A patent/JP7030143B2/ja active Active
-
2021
- 2021-12-16 JP JP2021204088A patent/JP7242823B2/ja active Active
-
2022
- 2022-05-13 JP JP2022079222A patent/JP7355884B2/ja active Active
-
2023
- 2023-09-21 JP JP2023154168A patent/JP2023171819A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20160111315A1 (en) | 2016-04-21 |
JP7242823B2 (ja) | 2023-03-20 |
KR20230035150A (ko) | 2023-03-10 |
JP2022043171A (ja) | 2022-03-15 |
TWI713139B (zh) | 2020-12-11 |
TWI660453B (zh) | 2019-05-21 |
KR102706817B1 (ko) | 2024-09-12 |
TW201933529A (zh) | 2019-08-16 |
CN111916387A (zh) | 2020-11-10 |
KR20220025936A (ko) | 2022-03-03 |
JP2023171819A (ja) | 2023-12-05 |
CN106663647A (zh) | 2017-05-10 |
CN106663647B (zh) | 2020-08-25 |
US10008404B2 (en) | 2018-06-26 |
JP2020074423A (ja) | 2020-05-14 |
JP2017538278A (ja) | 2017-12-21 |
KR20240141842A (ko) | 2024-09-27 |
JP7355884B2 (ja) | 2023-10-03 |
US20180190528A1 (en) | 2018-07-05 |
JP2022119820A (ja) | 2022-08-17 |
KR102415779B1 (ko) | 2022-06-30 |
WO2016060960A1 (en) | 2016-04-21 |
TW201626497A (zh) | 2016-07-16 |
US10872800B2 (en) | 2020-12-22 |
KR20170073584A (ko) | 2017-06-28 |
JP7030143B2 (ja) | 2022-03-04 |
KR102506457B1 (ko) | 2023-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7355884B2 (ja) | 高温処理用静電チャックアセンブリ | |
JP7232892B2 (ja) | 高温プロセスのための基板支持アセンブリ | |
US11742225B2 (en) | Electrostatic puck assembly with metal bonded backing plate | |
TWM588356U (zh) | 用於基板支撐組件的多區墊圈 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190525 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190725 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200107 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6644051 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |