JP6642731B2 - 半導体モジュール及び電力変換装置 - Google Patents
半導体モジュール及び電力変換装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 95
- 239000000498 cooling water Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005192 partition Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20927—Liquid coolant without phase change
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
- Structure Of Printed Boards (AREA)
Description
図1は、本発明の実施の形態1に係る半導体モジュールを示す斜視図である。図2は、本発明の実施の形態1に係る半導体モジュールを分解した状態を示す斜視図である。図3は、本発明の実施の形態1に係る半導体モジュールの導電性ベース板の上面図である。図4は、本発明の実施の形態1に係る半導体モジュールの導電性ベース板の下面図である。図5は、本発明の実施の形態1に係る半導体モジュールの放熱性ベース板の上面図である。図6は、本発明の実施の形態1に係る半導体モジュールの冷却器の上面図である。図7は、図1のI−IIに沿った断面図である。図8は、図1のIII−IVに沿った断面図である。この半導体モジュールは冷却器一体型モジュールである。
図17は、本発明の実施の形態2に係る半導体モジュールの導電性ベース板の下面図である。複数のフィン6のうち流入側のフィンは流出側のフィンよりもフィン密度が高い。従って、水流が強い流入側のフィンは水流が弱い流出側のフィンよりも冷却水が通過し難い形状となっている。これにより、冷却水が流入側のフィンに集中するのを抑制し、流出側のフィンへの流入を増加させて、冷却水通過量をフィン全体で均一にして均一に冷却することができる。
図18は、本発明の実施の形態3に係る半導体モジュールの導電性ベース板の下面図である。複数のフィン6の形状は流入側に中心を持つ放射状の楕円弧である。この場合にも、流入側のフィンは流出側のフィンよりも冷却水が通過し難い形状となるため、実施の形態2と同様の効果を得ることができる。
図19は、本発明の実施の形態4に係る半導体モジュールを示す斜視図である。図20は、図19のI−IIに沿った断面図である。図21は、図19のIII−IVに沿った断面図である。流入口9a及び流出口9bの上方に複数のフィン6及び放熱性ベース板7が無い吹き抜け構造13が設けられている。吹き抜け構造13により流入口9a及び流出口9b周囲の空間体積が増えて水溜まり部になるため、モジュールの圧損を低減させることができる。
本実施の形態は、上述した実施の形態1〜4にかかる半導体モジュールを電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下では三相のインバータに適用した場合について説明する。
Claims (10)
- 導電性ベース板と、
前記導電性ベース板の上面に設けられた絶縁基板と、
前記絶縁基板上に設けられた導電性パターンと、
前記導電性パターン上に設けられた複数の半導体素子と、
前記導電性ベース板の下面に設けられた複数のフィンと、
前記複数のフィンの先端に設けられた放熱性ベース板と、
前記複数のフィン及び前記放熱性ベース板を囲うように設けられ、底面に流入口と流出口を有する冷却器と、
前記冷却器と前記放熱性ベース板で囲まれた空間を、前記流入口と繋がっている流入側空間と、前記流出口と繋がっている流出側空間とに分離するパーティションとを備え、
前記放熱性ベース板の中央部に第1のスリットが設けられ、
流入側から流出側に向かう方向に沿った前記放熱性ベース板の両辺にそれぞれ第2及び第3のスリットが設けられ、
前記第1のスリットと前記第2及び第3のスリットの一方が前記流入側空間に接続された流入側スリットであり、他方が前記流出側空間に接続された流出側スリットであることを特徴とする半導体モジュール。 - 前記複数の半導体素子は、第1の半導体素子と、前記第1の半導体素子よりも発熱量が大きい第2の半導体素子とを有し、
前記第2の半導体素子は、前記第1の半導体素子よりも前記流入側スリットの近くに配置されていることを特徴とする請求項1に記載の半導体モジュール。 - 前記第2及び第3のスリットが前記流入側スリットであり、
前記第2の半導体素子は前記第2及び第3のスリットの上方に配置されていることを特徴とする請求項2に記載の半導体モジュール。 - 前記第1のスリットが前記流入側スリットであり、
前記第2の半導体素子は前記第1のスリットの上方に配置されていることを特徴とする請求項2に記載の半導体モジュール。 - 前記複数のフィンのうち流入側のフィンは流出側のフィンよりも冷却水が通過し難い形状であることを特徴とする請求項1〜4の何れか1項に記載の半導体モジュール。
- 前記流入側のフィンは前記流出側のフィンよりもフィン密度が高いことを特徴とする請求項5に記載の半導体モジュール。
- 前記複数のフィンの形状は前記流入側に中心を持つ放射状の楕円弧であることを特徴とする請求項5に記載の半導体モジュール。
- 前記流入口及び前記流出口の上方に前記複数のフィン及び前記放熱性ベース板が無い吹き抜け構造が設けられていることを特徴とする請求項1〜7の何れか1項に記載の半導体モジュール。
- 前記複数の半導体素子はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜8の何れか1項に記載の半導体モジュール。
- 請求項1〜9の何れか1項に記載の半導体モジュールを有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路とを備えることを特徴とする電力変換装置。
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PCT/JP2016/081329 WO2018073965A1 (ja) | 2016-10-21 | 2016-10-21 | 半導体モジュール及び電力変換装置 |
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JP (1) | JP6642731B2 (ja) |
CN (1) | CN109844941B (ja) |
DE (1) | DE112016007360T5 (ja) |
WO (1) | WO2018073965A1 (ja) |
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JP7118262B2 (ja) * | 2019-05-30 | 2022-08-15 | 三菱電機株式会社 | 半導体装置 |
CN116126039A (zh) * | 2021-11-12 | 2023-05-16 | 英业达科技有限公司 | 冷却液流量控制装置 |
JP7233510B1 (ja) | 2021-12-01 | 2023-03-06 | 三菱電機株式会社 | 電力変換装置 |
JP2023140076A (ja) * | 2022-03-22 | 2023-10-04 | 三菱重工業株式会社 | 冷却装置 |
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JPH0783078B2 (ja) | 1987-09-11 | 1995-09-06 | 株式会社日立製作所 | 半導体冷却装置 |
US6330153B1 (en) * | 1999-01-14 | 2001-12-11 | Nokia Telecommunications Oy | Method and system for efficiently removing heat generated from an electronic device |
FR2910227A1 (fr) * | 2006-12-18 | 2008-06-20 | Sagem Defense Securite | Dispositif a composants electroniques integres muni d'une cloison de separation de zones ventilees |
JP5099417B2 (ja) * | 2007-05-22 | 2012-12-19 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール及びインバータ装置 |
JP5206102B2 (ja) * | 2008-05-08 | 2013-06-12 | トヨタ自動車株式会社 | 半導体装置 |
WO2011136362A1 (ja) * | 2010-04-28 | 2011-11-03 | 株式会社 豊田自動織機 | 放熱装置および半導体装置 |
US9252069B2 (en) * | 2010-08-31 | 2016-02-02 | Teledyne Scientific & Imaging, Llc | High power module cooling system |
KR101918261B1 (ko) * | 2011-11-28 | 2018-11-14 | 삼성전자주식회사 | 모바일 장치용 반도체 패키지 |
JP2013247354A (ja) * | 2012-05-23 | 2013-12-09 | Samsung Electro-Mechanics Co Ltd | 電力モジュール用放熱システム |
JP2014082311A (ja) | 2012-10-16 | 2014-05-08 | Toyota Motor Corp | 衝突噴流冷却器およびその製造方法 |
US20140376185A1 (en) * | 2013-06-19 | 2014-12-25 | Fairchild Korea Semiconductor Ltd. | Cooling device |
WO2015029186A1 (ja) * | 2013-08-29 | 2015-03-05 | 三菱電機株式会社 | 半導体モジュール、半導体装置、及び自動車 |
JP6124742B2 (ja) * | 2013-09-05 | 2017-05-10 | 三菱電機株式会社 | 半導体装置 |
JP6292048B2 (ja) | 2014-06-20 | 2018-03-14 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール |
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US20190295924A1 (en) | 2019-09-26 |
DE112016007360T5 (de) | 2019-07-04 |
JPWO2018073965A1 (ja) | 2019-03-22 |
US10504820B2 (en) | 2019-12-10 |
CN109844941B (zh) | 2022-12-13 |
WO2018073965A1 (ja) | 2018-04-26 |
CN109844941A (zh) | 2019-06-04 |
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