JP6639103B2 - スイッチングユニット及び電源回路 - Google Patents

スイッチングユニット及び電源回路 Download PDF

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Publication number
JP6639103B2
JP6639103B2 JP2015083324A JP2015083324A JP6639103B2 JP 6639103 B2 JP6639103 B2 JP 6639103B2 JP 2015083324 A JP2015083324 A JP 2015083324A JP 2015083324 A JP2015083324 A JP 2015083324A JP 6639103 B2 JP6639103 B2 JP 6639103B2
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Japan
Prior art keywords
switching element
switching
diode
switching unit
voltage
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JP2015083324A
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English (en)
Japanese (ja)
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JP2016208080A5 (enExample
JP2016208080A (ja
Inventor
光平 長谷川
光平 長谷川
壮紀 安住
壮紀 安住
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2015083324A priority Critical patent/JP6639103B2/ja
Priority to CN201610027553.5A priority patent/CN106059548B/zh
Priority to US15/096,454 priority patent/US9806706B2/en
Publication of JP2016208080A publication Critical patent/JP2016208080A/ja
Priority to US15/716,606 priority patent/US9941874B2/en
Publication of JP2016208080A5 publication Critical patent/JP2016208080A5/ja
Application granted granted Critical
Publication of JP6639103B2 publication Critical patent/JP6639103B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/01—Resonant DC/DC converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33571—Half-bridge at primary side of an isolation transformer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
JP2015083324A 2015-04-15 2015-04-15 スイッチングユニット及び電源回路 Active JP6639103B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015083324A JP6639103B2 (ja) 2015-04-15 2015-04-15 スイッチングユニット及び電源回路
CN201610027553.5A CN106059548B (zh) 2015-04-15 2016-01-15 开关单元及电源电路
US15/096,454 US9806706B2 (en) 2015-04-15 2016-04-12 Switching unit and power supply circuit
US15/716,606 US9941874B2 (en) 2015-04-15 2017-09-27 Switching unit and power supply circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015083324A JP6639103B2 (ja) 2015-04-15 2015-04-15 スイッチングユニット及び電源回路

Publications (3)

Publication Number Publication Date
JP2016208080A JP2016208080A (ja) 2016-12-08
JP2016208080A5 JP2016208080A5 (enExample) 2018-05-24
JP6639103B2 true JP6639103B2 (ja) 2020-02-05

Family

ID=57128992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015083324A Active JP6639103B2 (ja) 2015-04-15 2015-04-15 スイッチングユニット及び電源回路

Country Status (3)

Country Link
US (2) US9806706B2 (enExample)
JP (1) JP6639103B2 (enExample)
CN (1) CN106059548B (enExample)

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FR3059490B1 (fr) 2016-11-25 2018-11-16 Exagan Dispositif de commutation d'un circuit de puissance presentant un circuit passif de protection
EP3503364B2 (en) * 2017-12-22 2023-10-04 Valeo eAutomotive Germany GmbH Driver unit, electric power converter, vehicle and method for operating an electric power converter
CN110768649B (zh) * 2018-07-26 2023-03-24 台达电子工业股份有限公司 功率半导体开关的门极电路及门极驱动电路
JP6981393B2 (ja) * 2018-10-26 2021-12-15 オムロン株式会社 スイッチング素子の駆動回路及びスイッチング回路
JP7224918B2 (ja) * 2019-01-04 2023-02-20 株式会社東芝 半導体装置及び半導体パッケージ
WO2020252561A1 (en) * 2019-06-17 2020-12-24 Smartd Technologies Inc. Dynamic balancing of transistors
JP7337618B2 (ja) 2019-09-17 2023-09-04 株式会社東芝 半導体装置
JP7242487B2 (ja) * 2019-09-17 2023-03-20 株式会社東芝 半導体装置
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JP7358227B2 (ja) * 2019-12-19 2023-10-10 株式会社東芝 半導体装置
JP7538097B2 (ja) * 2021-09-13 2024-08-21 株式会社東芝 半導体装置
US20240162898A1 (en) * 2022-11-14 2024-05-16 Monolithic Power Systems, Inc. Power switch device with cascode structure and the forming method thereof
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Also Published As

Publication number Publication date
US9806706B2 (en) 2017-10-31
US20180019743A1 (en) 2018-01-18
CN106059548B (zh) 2019-09-20
CN106059548A (zh) 2016-10-26
US20160308444A1 (en) 2016-10-20
US9941874B2 (en) 2018-04-10
JP2016208080A (ja) 2016-12-08

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