JP6636465B2 - 過渡液相相互拡散により2つの部材を永久接合するためのプロセス - Google Patents

過渡液相相互拡散により2つの部材を永久接合するためのプロセス Download PDF

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JP6636465B2
JP6636465B2 JP2016570808A JP2016570808A JP6636465B2 JP 6636465 B2 JP6636465 B2 JP 6636465B2 JP 2016570808 A JP2016570808 A JP 2016570808A JP 2016570808 A JP2016570808 A JP 2016570808A JP 6636465 B2 JP6636465 B2 JP 6636465B2
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layer
silver
bonding process
tin
nickel
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JP2017518186A (ja
JP2017518186A5 (enExample
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ジャン−ミシェル、モレル
ローラン、ビベ
キ、リム、タン
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Valeo Equipements Electriques Moteur SAS
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Valeo Equipements Electriques Moteur SAS
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    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
JP2016570808A 2014-06-02 2015-04-08 過渡液相相互拡散により2つの部材を永久接合するためのプロセス Active JP6636465B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1454951A FR3021670B1 (fr) 2014-06-02 2014-06-02 Procede d'assemblage permanent de deux elements par interdiffusion en phase liquide transitoire
FR1454951 2014-06-02
PCT/FR2015/050912 WO2015185812A1 (fr) 2014-06-02 2015-04-08 Procédé d'assemblage permanent de deux éléments par interdiffusion en phase liquide transitoire

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JP2017518186A JP2017518186A (ja) 2017-07-06
JP2017518186A5 JP2017518186A5 (enExample) 2019-09-05
JP6636465B2 true JP6636465B2 (ja) 2020-01-29

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JP (1) JP6636465B2 (enExample)
DE (1) DE112015002600T5 (enExample)
FR (1) FR3021670B1 (enExample)
WO (1) WO2015185812A1 (enExample)

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JP6516607B2 (ja) * 2015-07-22 2019-05-22 三菱電機株式会社 はんだ付け方法、はんだ接合構造および電子機器
WO2025032733A1 (ja) * 2023-08-08 2025-02-13 三菱電機株式会社 半導体装置およびその製造方法

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US8736052B2 (en) * 2011-08-22 2014-05-27 Infineon Technologies Ag Semiconductor device including diffusion soldered layer on sintered silver layer
JP5677346B2 (ja) * 2012-03-22 2015-02-25 株式会社日立製作所 半導体素子、半導体装置、半導体装置の製造方法及び接続材料
US9583453B2 (en) * 2012-05-30 2017-02-28 Ormet Circuits, Inc. Semiconductor packaging containing sintering die-attach material
US20140120356A1 (en) * 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
JP2014097529A (ja) * 2012-10-18 2014-05-29 Fuji Electric Co Ltd 発泡金属による接合方法、半導体装置の製造方法、半導体装置

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WO2015185812A1 (fr) 2015-12-10
JP2017518186A (ja) 2017-07-06
FR3021670B1 (fr) 2019-07-12
FR3021670A1 (fr) 2015-12-04
DE112015002600T5 (de) 2017-03-16

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