FR3021670B1 - Procede d'assemblage permanent de deux elements par interdiffusion en phase liquide transitoire - Google Patents

Procede d'assemblage permanent de deux elements par interdiffusion en phase liquide transitoire Download PDF

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Publication number
FR3021670B1
FR3021670B1 FR1454951A FR1454951A FR3021670B1 FR 3021670 B1 FR3021670 B1 FR 3021670B1 FR 1454951 A FR1454951 A FR 1454951A FR 1454951 A FR1454951 A FR 1454951A FR 3021670 B1 FR3021670 B1 FR 3021670B1
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Prior art keywords
metal
layer
silver
elements
assembly
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FR1454951A
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English (en)
French (fr)
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FR3021670A1 (fr
Inventor
Jean-Michel Morelle
Laurent Vivet
Ky Lim Tan
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Valeo Equipements Electriques Moteur SAS
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Valeo Equipements Electriques Moteur SAS
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Application filed by Valeo Equipements Electriques Moteur SAS filed Critical Valeo Equipements Electriques Moteur SAS
Priority to FR1454951A priority Critical patent/FR3021670B1/fr
Priority to JP2016570808A priority patent/JP6636465B2/ja
Priority to PCT/FR2015/050912 priority patent/WO2015185812A1/fr
Priority to DE112015002600.2T priority patent/DE112015002600T5/de
Publication of FR3021670A1 publication Critical patent/FR3021670A1/fr
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
FR1454951A 2014-06-02 2014-06-02 Procede d'assemblage permanent de deux elements par interdiffusion en phase liquide transitoire Active FR3021670B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1454951A FR3021670B1 (fr) 2014-06-02 2014-06-02 Procede d'assemblage permanent de deux elements par interdiffusion en phase liquide transitoire
JP2016570808A JP6636465B2 (ja) 2014-06-02 2015-04-08 過渡液相相互拡散により2つの部材を永久接合するためのプロセス
PCT/FR2015/050912 WO2015185812A1 (fr) 2014-06-02 2015-04-08 Procédé d'assemblage permanent de deux éléments par interdiffusion en phase liquide transitoire
DE112015002600.2T DE112015002600T5 (de) 2014-06-02 2015-04-08 0Verfahren zur dauerhaften Verbindung zweier Elemente mittels transienter flüssigphasen Interdiffusion

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Application Number Priority Date Filing Date Title
FR1454951A FR3021670B1 (fr) 2014-06-02 2014-06-02 Procede d'assemblage permanent de deux elements par interdiffusion en phase liquide transitoire
FR1454951 2014-06-02

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FR3021670A1 FR3021670A1 (fr) 2015-12-04
FR3021670B1 true FR3021670B1 (fr) 2019-07-12

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JP (1) JP6636465B2 (enExample)
DE (1) DE112015002600T5 (enExample)
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WO (1) WO2015185812A1 (enExample)

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JP6516607B2 (ja) * 2015-07-22 2019-05-22 三菱電機株式会社 はんだ付け方法、はんだ接合構造および電子機器
WO2025032733A1 (ja) * 2023-08-08 2025-02-13 三菱電機株式会社 半導体装置およびその製造方法

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US8736052B2 (en) * 2011-08-22 2014-05-27 Infineon Technologies Ag Semiconductor device including diffusion soldered layer on sintered silver layer
JP5677346B2 (ja) * 2012-03-22 2015-02-25 株式会社日立製作所 半導体素子、半導体装置、半導体装置の製造方法及び接続材料
US9583453B2 (en) * 2012-05-30 2017-02-28 Ormet Circuits, Inc. Semiconductor packaging containing sintering die-attach material
US20140120356A1 (en) * 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
JP2014097529A (ja) * 2012-10-18 2014-05-29 Fuji Electric Co Ltd 発泡金属による接合方法、半導体装置の製造方法、半導体装置

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