JP6630146B2 - 基板処理装置、半導体装置の製造方法および加熱部 - Google Patents

基板処理装置、半導体装置の製造方法および加熱部 Download PDF

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Publication number
JP6630146B2
JP6630146B2 JP2015253777A JP2015253777A JP6630146B2 JP 6630146 B2 JP6630146 B2 JP 6630146B2 JP 2015253777 A JP2015253777 A JP 2015253777A JP 2015253777 A JP2015253777 A JP 2015253777A JP 6630146 B2 JP6630146 B2 JP 6630146B2
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Prior art keywords
heating
processing chamber
substrate
heater
heat insulating
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JP2015253777A
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Japanese (ja)
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JP2016157923A (ja
Inventor
村田 等
等 村田
優一 和田
優一 和田
橘 八幡
橘 八幡
吉田 秀成
秀成 吉田
周平 西堂
周平 西堂
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Kokusai Electric Corp
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Kokusai Electric Corp
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Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to TW105100685A priority Critical patent/TWI613316B/zh
Priority to CN201610084003.7A priority patent/CN105914163B/zh
Priority to CN201811535202.0A priority patent/CN109616434A/zh
Priority to KR1020160017774A priority patent/KR101767469B1/ko
Priority to US15/051,740 priority patent/US9957616B2/en
Publication of JP2016157923A publication Critical patent/JP2016157923A/ja
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Publication of JP6630146B2 publication Critical patent/JP6630146B2/ja
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015253777A 2015-02-25 2015-12-25 基板処理装置、半導体装置の製造方法および加熱部 Active JP6630146B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW105100685A TWI613316B (zh) 2015-02-25 2016-01-11 基板處理裝置,半導體裝置的製造方法及加熱部
CN201610084003.7A CN105914163B (zh) 2015-02-25 2016-02-06 衬底处理装置、半导体器件的制造方法以及加热部
CN201811535202.0A CN109616434A (zh) 2015-02-25 2016-02-06 衬底处理装置及方法、半导体器件的制造方法以及加热部
KR1020160017774A KR101767469B1 (ko) 2015-02-25 2016-02-16 기판 처리 장치, 반도체 장치의 제조 방법 및 가열부
US15/051,740 US9957616B2 (en) 2015-02-25 2016-02-24 Substrate processing apparatus and heating unit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015035845 2015-02-25
JP2015035845 2015-02-25

Related Child Applications (1)

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JP2019221768A Division JP6886000B2 (ja) 2015-02-25 2019-12-09 基板処理装置、半導体装置の製造方法および加熱部

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JP2016157923A JP2016157923A (ja) 2016-09-01
JP6630146B2 true JP6630146B2 (ja) 2020-01-15

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JP2015253777A Active JP6630146B2 (ja) 2015-02-25 2015-12-25 基板処理装置、半導体装置の製造方法および加熱部
JP2019221768A Active JP6886000B2 (ja) 2015-02-25 2019-12-09 基板処理装置、半導体装置の製造方法および加熱部

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JP (2) JP6630146B2 (ko)
KR (1) KR101767469B1 (ko)
TW (1) TWI613316B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11232963B2 (en) * 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
JP6916920B1 (ja) * 2020-03-04 2021-08-11 株式会社Kokusai Electric 基板処理装置、治具、半導体装置の製造方法および基板処理装置の校正方法
CN116437507B (zh) * 2023-06-13 2023-09-22 江苏微导纳米科技股份有限公司 一种半导体用加热设备、半导体镀膜设备以及加热方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2583503B2 (ja) * 1987-05-08 1997-02-19 東京エレクトロン東北株式会社 熱処理装置
JP2705012B2 (ja) * 1988-10-14 1998-01-26 ウシオ電機株式会社 ヒータランプの製造方法
JP3423131B2 (ja) * 1995-11-20 2003-07-07 東京エレクトロン株式会社 熱処理装置及び処理装置
JP3383784B2 (ja) * 1999-11-24 2003-03-04 一郎 高橋 半導体ウェハの熱処理装置
JP3598032B2 (ja) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP2002043238A (ja) * 2000-07-28 2002-02-08 Seiko Epson Corp 熱処理装置
JP3912208B2 (ja) * 2002-02-28 2007-05-09 東京エレクトロン株式会社 熱処理装置
JP4276813B2 (ja) * 2002-03-26 2009-06-10 株式会社日立国際電気 熱処理装置および半導体製造方法
WO2004013901A2 (en) * 2002-08-02 2004-02-12 Wafermasters, Inc. Batch furnace
US6727194B2 (en) * 2002-08-02 2004-04-27 Wafermasters, Inc. Wafer batch processing system and method
JP4885438B2 (ja) * 2003-10-21 2012-02-29 株式会社日立国際電気 基板処理装置並びに基板処理装置用電気ヒーター及びこれを備えた基板処理装置並びに基板処理装置用電気ヒーターにおける発熱体の保持構造及び基板処理装置を用いた半導体装置の製造方法
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
KR101223489B1 (ko) * 2010-06-30 2013-01-17 삼성디스플레이 주식회사 기판 가공 장치

Also Published As

Publication number Publication date
KR101767469B1 (ko) 2017-08-11
KR20160103928A (ko) 2016-09-02
JP6886000B2 (ja) 2021-06-16
TW201704525A (zh) 2017-02-01
JP2020057796A (ja) 2020-04-09
JP2016157923A (ja) 2016-09-01
TWI613316B (zh) 2018-02-01

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