JP6575212B2 - 電子デバイス、電子デバイスの製造方法、電子機器、および移動体 - Google Patents
電子デバイス、電子デバイスの製造方法、電子機器、および移動体 Download PDFInfo
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- JP6575212B2 JP6575212B2 JP2015156780A JP2015156780A JP6575212B2 JP 6575212 B2 JP6575212 B2 JP 6575212B2 JP 2015156780 A JP2015156780 A JP 2015156780A JP 2015156780 A JP2015156780 A JP 2015156780A JP 6575212 B2 JP6575212 B2 JP 6575212B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 94
- 238000007789 sealing Methods 0.000 claims description 89
- 238000004891 communication Methods 0.000 claims description 78
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 description 78
- 238000005530 etching Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 12
- 239000000470 constituent Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 4
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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JP2015156780A JP6575212B2 (ja) | 2015-08-07 | 2015-08-07 | 電子デバイス、電子デバイスの製造方法、電子機器、および移動体 |
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JP2015156780A JP6575212B2 (ja) | 2015-08-07 | 2015-08-07 | 電子デバイス、電子デバイスの製造方法、電子機器、および移動体 |
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JP2017036940A JP2017036940A (ja) | 2017-02-16 |
JP2017036940A5 JP2017036940A5 (enrdf_load_stackoverflow) | 2018-09-06 |
JP6575212B2 true JP6575212B2 (ja) | 2019-09-18 |
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JP2015156780A Expired - Fee Related JP6575212B2 (ja) | 2015-08-07 | 2015-08-07 | 電子デバイス、電子デバイスの製造方法、電子機器、および移動体 |
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Families Citing this family (4)
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DE102017215531A1 (de) * | 2017-09-05 | 2019-03-07 | Robert Bosch Gmbh | Verfahren zum Verschließen einer mikromechanischen Vorrichtung mittels Laser-Schmelzen und mikromechanische Vorrichtung mit einem Laser-Schmelz-Verschluss |
JP2021022620A (ja) * | 2019-07-25 | 2021-02-18 | セイコーエプソン株式会社 | 電子デバイス、電子デバイスの製造方法、電子機器、及び移動体 |
CN114314500B (zh) * | 2020-09-30 | 2025-07-22 | 中芯集成电路(宁波)有限公司 | 半导体器件制造方法及电子装置 |
CN113436527B (zh) * | 2021-05-10 | 2023-02-03 | 深圳金之桥信息科技有限公司 | 一种多屏组合的电子显示屏 |
Family Cites Families (6)
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JPS5343477A (en) * | 1976-09-30 | 1978-04-19 | Nec Corp | Semiconductor device |
FR2763745B1 (fr) * | 1997-05-23 | 1999-08-27 | Sextant Avionique | Procede de fabrication d'un micro-capteur en silicium usine |
JP2009182924A (ja) * | 2008-02-01 | 2009-08-13 | Epson Toyocom Corp | 圧電デバイス及び圧電デバイスの製造方法 |
JP2013153038A (ja) * | 2012-01-25 | 2013-08-08 | Seiko Epson Corp | パッケージ、振動デバイス及び電子機器 |
JP2014017346A (ja) * | 2012-07-09 | 2014-01-30 | Seiko Epson Corp | 電子部品パッケージ及び光学デバイス |
JP6252737B2 (ja) * | 2013-09-05 | 2017-12-27 | セイコーエプソン株式会社 | 電子デバイス、電子デバイスの製造方法、電子機器及び移動体 |
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