JP6573892B2 - 移送チャンバガスパージ装置、電子デバイス処理システム、及びパージ方法。 - Google Patents
移送チャンバガスパージ装置、電子デバイス処理システム、及びパージ方法。 Download PDFInfo
- Publication number
- JP6573892B2 JP6573892B2 JP2016545241A JP2016545241A JP6573892B2 JP 6573892 B2 JP6573892 B2 JP 6573892B2 JP 2016545241 A JP2016545241 A JP 2016545241A JP 2016545241 A JP2016545241 A JP 2016545241A JP 6573892 B2 JP6573892 B2 JP 6573892B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- inlet
- transfer
- transfer chamber
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86292—System with plural openings, one a gas vent or access opening
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
本出願は、あらゆる目的のために参照により本書に組み込まれている、2013年9月30日に出願された「移送チャンバガスパージ装置、システム、及び方法(TRANSFER CHAMBER GAS PURGE APPARATUS, SYSTEMS, AND METHODS)」と題する米国仮特許出願第61/884,637号(代理人整理番号20841USAL)に、優先権を主張する。
Claims (13)
- 移送チャンバを備え、
前記移送チャンバは、移送ロボットの少なくとも一部分を包含するよう適合しており、
前記移送チャンバは、側壁と、チャンバリッドと、チャンバフロアとによって少なくとも部分的に形成されており、
前記チャンバリッドは、前記移送チャンバにパージガスを供給するために分散された複数のチャンバ入口を有し、
前記移送チャンバが、第1の処理チャンバおよび第2の処理チャンバに結合されており、
前記分散された複数のチャンバ入口は、前記第1の処理チャンバで処理された基板が移送される第1の経路の上方に位置付けられる第1の主チャンバ入口と、前記第2の処理チャンバで処理された基板が移送される第2の経路の上方に位置付けられる第2の主チャンバ入口と、前記第1の主チャンバ入口と前記第2の主チャンバ入口の間に配設される副チャンバ入口と、を含み、前記第1および第2の主チャンバ入口と、前記副チャンバ入口と、は個別に制御可能である、移送チャンバガスパージ装置。 - 前記第1の主チャンバ入口及び前記第2の主チャンバ入口と、前記副チャンバ入口とは、流量制御アセンブリに結合される、請求項1に記載の移送チャンバガスパージ装置。
- 前記分散された複数のチャンバ入口は、少なくとも4つの主チャンバ入口を備える、請求項1に記載の移送チャンバガスパージ装置。
- 前記移送チャンバに結合された処理チャンバをさらに備え、前記分散された複数のチャンバ入口は、基板が前記処理チャンバを出て行く際の前記基板の経路の上方に位置付けられた、主チャンバ入口を備える、請求項1に記載の移送チャンバガスパージ装置。
- 前記チャンバリッドに形成された複数の視認窓をさらに備える、請求項1に記載の移送チャンバガスパージ装置。
- 前記分散された複数のチャンバ入口のうちの少なくともいくつかは、拡散要素を備える、請求項1に記載の移送チャンバパージガス装置。
- 前記第1の主チャンバ入口及び前記第2の主チャンバ入口と、前記副チャンバ入口とは、前記移送チャンバ内へのそれらの入口部のそれぞれにおいて異なる入口流積を有する、請求項1に記載の移送チャンバパージガス装置。
- 前記移送チャンバからパージガスを排気するために前記チャンバフロアに提供された分散された複数のチャンバ出口をさらに備える、請求項1に記載の移送チャンバパージガス装置。
- 前記移送チャンバからパージガスを排気するために前記チャンバフロアに提供された分散された複数のチャンバ出口をさらに備え、前記分散された複数のチャンバ出口のうちの少なくともいくつかは、前記分散された複数のチャンバ入口のうちの少なくともいくつかと、垂直方向に一直線になっている、請求項1に記載の移送チャンバパージガス装置。
- 側壁と、チャンバリッドと、チャンバフロアとを有するメインフレームハウジングによって少なくとも部分的に形成された、移送チャンバであって、前記移送チャンバが、第1の処理チャンバおよび第2の処理チャンバに結合されている、移送チャンバと、
前記移送チャンバにパージガスを供給するために前記チャンバリッドに分散された複数のチャンバ入口であって、前記分散された複数のチャンバ入口は、前記第1の処理チャンバで処理された基板が移送される第1の経路の上方に位置付けられる第1の主チャンバ入口と、前記第2の処理チャンバで処理された基板が移送される第2の経路の上方に位置付けられる第2の主チャンバ入口と、前記第1の主チャンバ入口と前記第2の主チャンバ入口の間に配設される副チャンバ入口と、を含み、前記第1および第2の主チャンバ入口と、前記副チャンバ入口と、は個別に制御可能である、複数のチャンバ入口と、
前記移送チャンバからパージガスを排気するために前記チャンバフロアに提供された複数のチャンバ出口と、を備える、電子デバイス処理システム。 - 移送チャンバをパージする方法であって、
チャンバリッドと、側壁と、チャンバフロアとによって少なくとも部分的に形成された移送チャンバであって、前記移送チャンバからアクセスされるチャンバに出し入れするように基板を搬送するよう適合したロボットの少なくとも一部分を包含し、前記移送チャンバが、第1の処理チャンバおよび第2の処理チャンバに結合されている、移送チャンバを提供することと、
前記チャンバリッドに分散された複数のチャンバ入口を通るパージガスの流入によって、前記移送チャンバからのパージングを行うことと、を含み、前記分散された複数のチャンバ入口は、前記第1の処理チャンバで処理された基板が移送される第1の経路の上方に位置付けられる第1の主チャンバ入口と、前記第2の処理チャンバで処理された基板が移送される第2の経路の上方に位置付けられる第2の主チャンバ入口と、前記第1の主チャンバ入口と前記第2の主チャンバ入口の間に配設される副チャンバ入口と、を含み、前記第1の主チャンバ入口および第2の主チャンバ入口と、前記副チャンバ入口と、は個別に制御可能であり、前記移送チャンバからのパージングを行うことは更に、前記基板の上方に実質的に層状の前記パージガスの流れを提供することを含む、方法。 - 前記パージすることは更に、前記フロアに分散された複数のチャンバ出口を通じて、前記パージガスを排気することを含む、請求項11に記載の方法。
- 前記移送チャンバからのパージングを行うことは更に、複数の拡散要素を通る前記パージガスの流入を含む、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361884637P | 2013-09-30 | 2013-09-30 | |
US61/884,637 | 2013-09-30 | ||
PCT/US2014/057753 WO2015048470A1 (en) | 2013-09-30 | 2014-09-26 | Transfer chamber gas purge apparatus, electronic device processing systems, and purge methods |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016535940A JP2016535940A (ja) | 2016-11-17 |
JP6573892B2 true JP6573892B2 (ja) | 2019-09-11 |
Family
ID=52738916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016545241A Expired - Fee Related JP6573892B2 (ja) | 2013-09-30 | 2014-09-26 | 移送チャンバガスパージ装置、電子デバイス処理システム、及びパージ方法。 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9441792B2 (ja) |
JP (1) | JP6573892B2 (ja) |
KR (1) | KR101770970B1 (ja) |
CN (1) | CN105580107B (ja) |
TW (1) | TWI598455B (ja) |
WO (1) | WO2015048470A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210127823A (ko) | 2013-11-04 | 2021-10-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 증가된 개수의 측들을 갖는 이송 챔버들, 반도체 디바이스 제조 프로세싱 툴들, 및 프로세싱 방법들 |
WO2016172003A1 (en) | 2015-04-20 | 2016-10-27 | Applied Materials, Inc. | Buffer chamber wafer heating mechanism and supporting robot |
US10520371B2 (en) | 2015-10-22 | 2019-12-31 | Applied Materials, Inc. | Optical fiber temperature sensors, temperature monitoring apparatus, and manufacturing methods |
KR20170048787A (ko) * | 2015-10-27 | 2017-05-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN116978818A (zh) * | 2016-06-03 | 2023-10-31 | 应用材料公司 | 扩散腔室内部的气流的设计 |
US10119191B2 (en) | 2016-06-08 | 2018-11-06 | Applied Materials, Inc. | High flow gas diffuser assemblies, systems, and methods |
US10684159B2 (en) | 2016-06-27 | 2020-06-16 | Applied Materials, Inc. | Methods, systems, and apparatus for mass flow verification based on choked flow |
CN109964331B (zh) * | 2016-12-02 | 2021-09-03 | 应用材料公司 | 薄膜封装处理系统和工艺配件 |
US20180185893A1 (en) * | 2016-12-31 | 2018-07-05 | Applied Materials, Inc. | Systems, methods, and apparatus for transfer chamber gas purge of electronic device processing systems |
JP7158133B2 (ja) * | 2017-03-03 | 2022-10-21 | アプライド マテリアルズ インコーポレイテッド | 雰囲気が制御された移送モジュール及び処理システム |
KR20200066294A (ko) * | 2017-08-18 | 2020-06-09 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 극저온 유체들을 분사하기 위한 장치 |
DE102018107547A1 (de) * | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vorrichtung zur behandlung von substraten oder waferen |
US11948810B2 (en) * | 2017-11-15 | 2024-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for processing substrates or wafers |
CN110838461B (zh) * | 2018-08-16 | 2023-09-08 | 细美事有限公司 | 净化处理装置及净化处理方法 |
EP3912688A1 (de) * | 2020-05-19 | 2021-11-24 | L'air Liquide, Société Anonyme Pour L'Étude Et L'exploitation Des Procédés Georges Claude | Sichere inertisierungsvorrichtung |
USD973116S1 (en) * | 2020-11-17 | 2022-12-20 | Applied Materials, Inc. | Mainframe of substrate processing system |
USD973737S1 (en) | 2020-11-17 | 2022-12-27 | Applied Materials, Inc. | Mainframe of substrate processing system |
USD1029066S1 (en) * | 2022-03-11 | 2024-05-28 | Applied Materials, Inc. | Mainframe of dual-robot substrate processing system |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4540326A (en) * | 1982-09-17 | 1985-09-10 | Nacom Industries, Inc. | Semiconductor wafer transport system |
JPH02138420U (ja) * | 1989-04-21 | 1990-11-19 | ||
US5447409A (en) | 1989-10-20 | 1995-09-05 | Applied Materials, Inc. | Robot assembly |
US5211733A (en) * | 1990-11-16 | 1993-05-18 | Mitsubishi Kasei Corporation | Method for producing a high-purity silica glass powder |
US5407350A (en) * | 1992-02-13 | 1995-04-18 | Tokyo Electron Limited | Heat-treatment apparatus |
JP3176118B2 (ja) * | 1992-03-27 | 2001-06-11 | 株式会社東芝 | 多室型基板処理装置 |
US5433780A (en) * | 1992-11-20 | 1995-07-18 | Tokyo Electron Limited | Vacuum processing apparatus and exhaust system that prevents particle contamination |
JPH07230959A (ja) * | 1994-02-17 | 1995-08-29 | Tokyo Electron Ltd | 被処理体近傍空間の気流の制御方法及び減圧装置 |
US5789878A (en) | 1996-07-15 | 1998-08-04 | Applied Materials, Inc. | Dual plane robot |
US6468353B1 (en) | 1997-06-04 | 2002-10-22 | Applied Materials, Inc. | Method and apparatus for improved substrate handling |
US6575737B1 (en) | 1997-06-04 | 2003-06-10 | Applied Materials, Inc. | Method and apparatus for improved substrate handling |
US5951770A (en) | 1997-06-04 | 1999-09-14 | Applied Materials, Inc. | Carousel wafer transfer system |
US6722834B1 (en) | 1997-10-08 | 2004-04-20 | Applied Materials, Inc. | Robot blade with dual offset wafer supports |
JPH11145241A (ja) * | 1997-11-06 | 1999-05-28 | Toshiba Corp | マルチチャンバシステムおよび基板検出方法 |
US6267549B1 (en) | 1998-06-02 | 2001-07-31 | Applied Materials, Inc. | Dual independent robot blades with minimal offset |
US6379095B1 (en) | 2000-04-14 | 2002-04-30 | Applied Materials, Inc. | Robot for handling semiconductor wafers |
US6582175B2 (en) | 2000-04-14 | 2003-06-24 | Applied Materials, Inc. | Robot for handling semiconductor wafers |
EP1297397A2 (en) | 2000-06-14 | 2003-04-02 | Applied Materials, Inc. | Methods and apparatus for maintaining a pressure within an environmentally controlled chamber |
JP2005518655A (ja) | 2001-07-15 | 2005-06-23 | アプライド マテリアルズ インコーポレイテッド | 処理システム |
KR100486690B1 (ko) | 2002-11-29 | 2005-05-03 | 삼성전자주식회사 | 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법 |
KR100621804B1 (ko) | 2004-09-22 | 2006-09-19 | 삼성전자주식회사 | 디퓨저 및 그를 구비한 반도체 제조설비 |
JP2006216710A (ja) * | 2005-02-02 | 2006-08-17 | Hitachi High-Technologies Corp | 半導体製造装置 |
KR20060135447A (ko) | 2005-06-25 | 2006-12-29 | 삼성전자주식회사 | 트랜스퍼 챔버에 디퓨저를 구비한 반도체 식각 장치 |
KR101147908B1 (ko) | 2005-08-29 | 2012-05-25 | 주성엔지니어링(주) | 월라이너를 포함하는 기판제조장치 |
JP5224567B2 (ja) * | 2005-11-21 | 2013-07-03 | 株式会社日立国際電気 | 基板処理装置、基板処理方法および半導体装置の製造方法 |
WO2007075840A2 (en) | 2005-12-20 | 2007-07-05 | Applied Materials, Inc. | Extended mainframe designs for semiconductor device manufacturing equipment |
KR100807031B1 (ko) | 2006-08-24 | 2008-02-25 | 동부일렉트로닉스 주식회사 | 반도체 제조장치의 챔버용 퍼지 시스템 |
WO2009055507A1 (en) | 2007-10-26 | 2009-04-30 | Applied Materials, Inc. | Methods and apparatus for sealing a slit valve door |
US8777547B2 (en) | 2009-01-11 | 2014-07-15 | Applied Materials, Inc. | Systems, apparatus and methods for transporting substrates |
KR101781808B1 (ko) | 2009-01-11 | 2017-10-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 전자 디바이스 제조시에 기판을 이송하기 위한 로봇 시스템, 장치 및 방법 |
US20110265951A1 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
KR101249999B1 (ko) * | 2010-08-12 | 2013-04-03 | 주식회사 디엠에스 | 화학기상증착 장치 |
US9076829B2 (en) | 2011-08-08 | 2015-07-07 | Applied Materials, Inc. | Robot systems, apparatus, and methods adapted to transport substrates in electronic device manufacturing |
JP2013069818A (ja) * | 2011-09-21 | 2013-04-18 | Sharp Corp | 気相成長装置および結晶膜の形成方法 |
US9076830B2 (en) | 2011-11-03 | 2015-07-07 | Applied Materials, Inc. | Robot systems and apparatus adapted to transport dual substrates in electronic device manufacturing with wrist drive motors mounted to upper arm |
US20130149076A1 (en) | 2011-12-12 | 2013-06-13 | Applied Materials, Inc. | Fully-independent robot systems, apparatus, and methods adapted to transport multiple substrates in electronic device manufacturing |
US20140273487A1 (en) | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Pulsed dc plasma etching process and apparatus |
US9355876B2 (en) | 2013-03-15 | 2016-05-31 | Applied Materials, Inc. | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations |
WO2014150234A1 (en) | 2013-03-15 | 2014-09-25 | Applied Materials, Inc | Processing systems, apparatus, and methods adapted to process substrates in electronic device manufacturing |
-
2014
- 2014-09-26 CN CN201480053795.0A patent/CN105580107B/zh not_active Expired - Fee Related
- 2014-09-26 KR KR1020167011550A patent/KR101770970B1/ko active IP Right Grant
- 2014-09-26 US US14/498,449 patent/US9441792B2/en active Active
- 2014-09-26 JP JP2016545241A patent/JP6573892B2/ja not_active Expired - Fee Related
- 2014-09-26 WO PCT/US2014/057753 patent/WO2015048470A1/en active Application Filing
- 2014-09-29 TW TW103133782A patent/TWI598455B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20150090341A1 (en) | 2015-04-02 |
WO2015048470A1 (en) | 2015-04-02 |
TWI598455B (zh) | 2017-09-11 |
CN105580107B (zh) | 2019-02-19 |
KR20160067212A (ko) | 2016-06-13 |
CN105580107A (zh) | 2016-05-11 |
TW201522692A (zh) | 2015-06-16 |
KR101770970B1 (ko) | 2017-08-24 |
US9441792B2 (en) | 2016-09-13 |
JP2016535940A (ja) | 2016-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6573892B2 (ja) | 移送チャンバガスパージ装置、電子デバイス処理システム、及びパージ方法。 | |
US11742189B2 (en) | Multi-zone reactor, system including the reactor, and method of using the same | |
KR102614522B1 (ko) | 공간 분리를 갖는 단일 웨이퍼 프로세싱 환경들 | |
TWI806837B (zh) | 用於原子層沉積之設備及方法 | |
US20030213560A1 (en) | Tandem wafer processing system and process | |
JP4634495B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
JP5768713B2 (ja) | 多重基板処理チャンバー及びこれを含む基板処理システム | |
TW201041069A (en) | Substrate processing apparatus | |
JP2009055001A (ja) | 垂直反応器におけるバッチ処理のための方法および装置 | |
TWI806915B (zh) | 半導體加工設備 | |
KR101685096B1 (ko) | 기판처리장치 및 이를 이용한 기판처리방법 | |
WO2020086490A1 (en) | Side storage pods, equipment front end modules, and methods for operating the same | |
US8794896B2 (en) | Vacuum processing apparatus and zonal airflow generating unit | |
JP2022033870A (ja) | 成膜装置 | |
US20180185893A1 (en) | Systems, methods, and apparatus for transfer chamber gas purge of electronic device processing systems | |
US10119191B2 (en) | High flow gas diffuser assemblies, systems, and methods | |
JP7300527B2 (ja) | 基板の裏面保護 | |
KR20210070383A (ko) | 공간적 증착 툴을 동작시키는 방법들 | |
TWI474373B (zh) | Airtight module and exhaust method of the airtight module | |
KR20210066017A (ko) | 개선된 온도 균일성을 갖는 공간적 웨이퍼 처리 | |
TWI838222B (zh) | 具有空間分離的單個晶圓處理環境 | |
KR101512140B1 (ko) | 원자층 증착 장치 및 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170801 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180417 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180419 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180712 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180914 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20181113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190313 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20190320 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190416 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190716 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190730 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190814 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6573892 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |