JP6568769B2 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
JP6568769B2
JP6568769B2 JP2015212930A JP2015212930A JP6568769B2 JP 6568769 B2 JP6568769 B2 JP 6568769B2 JP 2015212930 A JP2015212930 A JP 2015212930A JP 2015212930 A JP2015212930 A JP 2015212930A JP 6568769 B2 JP6568769 B2 JP 6568769B2
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Japan
Prior art keywords
chamber
gas
substrate
oxide film
supply
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Japanese (ja)
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JP2016154209A (ja
Inventor
宏幸 ▲高▼橋
宏幸 ▲高▼橋
智明 荻原
智明 荻原
阿部　拓也
拓也 阿部
正彦 冨田
正彦 冨田
二郎 勝木
二郎 勝木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW105103319A priority Critical patent/TWI686843B/zh
Priority to CN201610077062.1A priority patent/CN105895503B/zh
Priority to KR1020160017030A priority patent/KR101840923B1/ko
Priority to US15/044,918 priority patent/US10622205B2/en
Publication of JP2016154209A publication Critical patent/JP2016154209A/ja
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Publication of JP6568769B2 publication Critical patent/JP6568769B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Chemistry (AREA)
JP2015212930A 2015-02-16 2015-10-29 基板処理方法及び基板処理装置 Active JP6568769B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW105103319A TWI686843B (zh) 2015-02-16 2016-02-02 基板處理方法及基板處理裝置
CN201610077062.1A CN105895503B (zh) 2015-02-16 2016-02-03 基板处理方法和基板处理装置
KR1020160017030A KR101840923B1 (ko) 2015-02-16 2016-02-15 기판 처리 방법 및 기판 처리 장치
US15/044,918 US10622205B2 (en) 2015-02-16 2016-02-16 Substrate processing method and substrate processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015027461 2015-02-16
JP2015027461 2015-02-16

Publications (2)

Publication Number Publication Date
JP2016154209A JP2016154209A (ja) 2016-08-25
JP6568769B2 true JP6568769B2 (ja) 2019-08-28

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Family Applications (1)

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JP2015212930A Active JP6568769B2 (ja) 2015-02-16 2015-10-29 基板処理方法及び基板処理装置

Country Status (4)

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JP (1) JP6568769B2 (zh)
KR (1) KR101840923B1 (zh)
CN (1) CN105895503B (zh)
TW (1) TWI686843B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210095799A (ko) 2020-01-24 2021-08-03 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108251895A (zh) * 2016-12-29 2018-07-06 江苏鲁汶仪器有限公司 一种氟化氢气相腐蚀设备及方法
JP6925196B2 (ja) * 2017-07-31 2021-08-25 東京エレクトロン株式会社 処理装置及び処理方法
KR102003362B1 (ko) * 2017-11-30 2019-10-17 무진전자 주식회사 고 선택적 실리콘 산화물 제거를 위한 건식 세정 장치 및 방법
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US10720334B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Selective cyclic dry etching process of dielectric materials using plasma modification
JP2020043180A (ja) * 2018-09-07 2020-03-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN110942986A (zh) * 2018-09-21 2020-03-31 胜高股份有限公司 形成于硅晶圆的表面的氧化膜的去除方法
JP7224160B2 (ja) * 2018-12-04 2023-02-17 東京エレクトロン株式会社 発光モニタ方法、基板処理方法、および基板処理装置
JP7348019B2 (ja) * 2019-10-09 2023-09-20 株式会社アルバック エッチング方法、および、エッチング装置
JP7550534B2 (ja) * 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN113889405B (zh) 2020-07-02 2024-07-05 长鑫存储技术有限公司 半导体结构的处理方法及形成方法
EP3968361B1 (en) * 2020-07-02 2024-01-31 Changxin Memory Technologies, Inc. Semiconductor structure processing method
JP7459720B2 (ja) * 2020-08-11 2024-04-02 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法、装置及びシステム
JP7561579B2 (ja) * 2020-11-11 2024-10-04 東京エレクトロン株式会社 エッチング方法およびエッチング装置
TW202310038A (zh) * 2021-05-31 2023-03-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR20230103419A (ko) * 2021-12-31 2023-07-07 세메스 주식회사 기판 처리 방법 및 기판 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266455A (ja) 2006-03-29 2007-10-11 Tokyo Electron Ltd 基板処理装置、基板処理方法及び記憶媒体
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP4949091B2 (ja) * 2007-03-16 2012-06-06 東京エレクトロン株式会社 基板処理装置、基板処理方法および記録媒体
JP2008235315A (ja) * 2007-03-16 2008-10-02 Tokyo Electron Ltd 基板処理装置、基板処理方法および記録媒体
JP5352103B2 (ja) * 2008-03-27 2013-11-27 東京エレクトロン株式会社 熱処理装置および処理システム
US20120156887A1 (en) * 2009-08-27 2012-06-21 Youhei Ono Vacuum processing apparatus and vacuum processing method
US8956546B2 (en) * 2010-08-03 2015-02-17 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US8664012B2 (en) * 2011-09-30 2014-03-04 Tokyo Electron Limited Combined silicon oxide etch and contamination removal process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210095799A (ko) 2020-01-24 2021-08-03 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
US11887861B2 (en) 2020-01-24 2024-01-30 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

Also Published As

Publication number Publication date
JP2016154209A (ja) 2016-08-25
TWI686843B (zh) 2020-03-01
KR20160100847A (ko) 2016-08-24
CN105895503A (zh) 2016-08-24
TW201707048A (zh) 2017-02-16
KR101840923B1 (ko) 2018-03-21
CN105895503B (zh) 2019-04-16

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