JP6562651B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6562651B2
JP6562651B2 JP2015032001A JP2015032001A JP6562651B2 JP 6562651 B2 JP6562651 B2 JP 6562651B2 JP 2015032001 A JP2015032001 A JP 2015032001A JP 2015032001 A JP2015032001 A JP 2015032001A JP 6562651 B2 JP6562651 B2 JP 6562651B2
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Japan
Prior art keywords
film
semiconductor device
pad electrode
manufacturing
resist pattern
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Expired - Fee Related
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JP2015032001A
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English (en)
Japanese (ja)
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JP2016154191A5 (OSRAM
JP2016154191A (ja
Inventor
博晃 佐野
博晃 佐野
裕人 野崎
裕人 野崎
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015032001A priority Critical patent/JP6562651B2/ja
Priority to US15/046,369 priority patent/US9647027B2/en
Publication of JP2016154191A publication Critical patent/JP2016154191A/ja
Publication of JP2016154191A5 publication Critical patent/JP2016154191A5/ja
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Publication of JP6562651B2 publication Critical patent/JP6562651B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP2015032001A 2015-02-20 2015-02-20 半導体装置の製造方法 Expired - Fee Related JP6562651B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015032001A JP6562651B2 (ja) 2015-02-20 2015-02-20 半導体装置の製造方法
US15/046,369 US9647027B2 (en) 2015-02-20 2016-02-17 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015032001A JP6562651B2 (ja) 2015-02-20 2015-02-20 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2016154191A JP2016154191A (ja) 2016-08-25
JP2016154191A5 JP2016154191A5 (OSRAM) 2018-03-29
JP6562651B2 true JP6562651B2 (ja) 2019-08-21

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JP2015032001A Expired - Fee Related JP6562651B2 (ja) 2015-02-20 2015-02-20 半導体装置の製造方法

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US (1) US9647027B2 (OSRAM)
JP (1) JP6562651B2 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102569936B1 (ko) * 2018-02-06 2023-08-25 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
CN109904343B (zh) * 2019-02-27 2021-10-26 昆山国显光电有限公司 一种显示装置及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260360A (ja) * 1986-05-06 1987-11-12 Seiko Epson Corp 固体撮像装置のパツシベ−シヨン層
JPH03291929A (ja) * 1990-04-09 1991-12-24 Nippon Telegr & Teleph Corp <Ntt> ドライエッチング方法
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
US5302547A (en) * 1993-02-08 1994-04-12 General Electric Company Systems for patterning dielectrics by laser ablation
JP3264035B2 (ja) * 1993-04-26 2002-03-11 ソニー株式会社 ドライエッチング方法
JP3959790B2 (ja) * 1997-08-26 2007-08-15 ソニー株式会社 半導体装置の製造方法
JP2000164836A (ja) * 1998-11-25 2000-06-16 Nikon Corp 固体撮像装置等の半導体装置の製造方法
JP2000340543A (ja) * 1999-05-26 2000-12-08 Sony Corp ドライエッチング方法および装置
DE10124631C1 (de) * 2001-05-18 2002-11-21 Atotech Deutschland Gmbh Verfahren zum direkten elektrolytischen Metallisieren von elektrisch nichtleiteitenden Substratoberflächen
KR101053323B1 (ko) * 2002-05-14 2011-08-01 소니 주식회사 반도체 장치와 그 제조 방법, 및 전자 기기
TWI289905B (en) * 2002-07-23 2007-11-11 Fujitsu Ltd Image sensor and image sensor module
JP2006351761A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp 固体撮像素子及びその製造方法
EP2371809A4 (en) * 2008-12-26 2015-09-02 Knc Lab Co Ltd METHOD FOR PRODUCING A CONCENTRATED SOLUTION FOR A LOW WATER-SOLVED PHOTOLACK EXCHANGE
JP2013131613A (ja) * 2011-12-21 2013-07-04 Toppan Printing Co Ltd カラー固体撮像素子の製造方法
JP6108698B2 (ja) * 2012-06-15 2017-04-05 キヤノン株式会社 固体撮像装置の製造方法
JP6178561B2 (ja) * 2012-11-15 2017-08-09 キヤノン株式会社 固体撮像装置の製造方法
JP2015005577A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 半導体装置の製造方法

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US20160247853A1 (en) 2016-08-25
JP2016154191A (ja) 2016-08-25
US9647027B2 (en) 2017-05-09

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