JP6560965B2 - 分配されたキャパシティブ遅延追跡ブーストの支援回路 - Google Patents

分配されたキャパシティブ遅延追跡ブーストの支援回路 Download PDF

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Publication number
JP6560965B2
JP6560965B2 JP2015226232A JP2015226232A JP6560965B2 JP 6560965 B2 JP6560965 B2 JP 6560965B2 JP 2015226232 A JP2015226232 A JP 2015226232A JP 2015226232 A JP2015226232 A JP 2015226232A JP 6560965 B2 JP6560965 B2 JP 6560965B2
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JP
Japan
Prior art keywords
voltage
boosting
boost
word line
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015226232A
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English (en)
Japanese (ja)
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JP2016100041A (ja
JP2016100041A5 (enExample
Inventor
バヤコウスキー マチェイ
バヤコウスキー マチェイ
フーバー ジャン−マイケル
フーバー ジャン−マイケル
ベンカテサ ラヴィ
ベンカテサ ラヴィ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2016100041A publication Critical patent/JP2016100041A/ja
Publication of JP2016100041A5 publication Critical patent/JP2016100041A5/ja
Application granted granted Critical
Publication of JP6560965B2 publication Critical patent/JP6560965B2/ja
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2015226232A 2014-11-20 2015-11-19 分配されたキャパシティブ遅延追跡ブーストの支援回路 Active JP6560965B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462082611P 2014-11-20 2014-11-20
US62/082,611 2014-11-20
US14/813,103 US9502119B2 (en) 2014-11-20 2015-07-29 Distributed capacitive delay tracking boost-assist circuit
US14/813,103 2015-07-29

Publications (3)

Publication Number Publication Date
JP2016100041A JP2016100041A (ja) 2016-05-30
JP2016100041A5 JP2016100041A5 (enExample) 2018-10-11
JP6560965B2 true JP6560965B2 (ja) 2019-08-14

Family

ID=56010861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015226232A Active JP6560965B2 (ja) 2014-11-20 2015-11-19 分配されたキャパシティブ遅延追跡ブーストの支援回路

Country Status (4)

Country Link
US (1) US9502119B2 (enExample)
JP (1) JP6560965B2 (enExample)
KR (1) KR102427825B1 (enExample)
CN (1) CN105788621B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106898371B (zh) * 2017-02-24 2020-08-28 中国科学院上海微系统与信息技术研究所 三维存储器读出电路及其字线与位线电压配置方法
US11170830B2 (en) * 2020-02-11 2021-11-09 Taiwan Semiconductor Manufacturing Company Limited Word line driver for low voltage operation
CN115731964A (zh) * 2021-08-27 2023-03-03 长鑫存储技术有限公司 存储器和存储器的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
KR0137317B1 (ko) * 1994-12-29 1998-04-29 김광호 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
JPH10228773A (ja) * 1997-02-14 1998-08-25 Hitachi Ltd ダイナミック型ｒａｍ
JP3412800B2 (ja) * 1997-05-27 2003-06-03 富士通株式会社 電圧発生回路を有した半導体装置
JP2001067868A (ja) * 1999-08-31 2001-03-16 Mitsubishi Electric Corp 半導体記憶装置
US7921388B2 (en) * 2006-09-18 2011-04-05 International Business Machines Corporation Wordline booster design structure and method of operating a wordine booster circuit
US8493812B2 (en) * 2010-10-28 2013-07-23 International Business Machines Corporation Boost circuit for generating an adjustable boost voltage
US8300446B2 (en) * 2010-12-13 2012-10-30 Texas Instruments Incorporated Ferroelectric random access memory with single plate line pulse during read
US8724373B2 (en) * 2011-09-12 2014-05-13 Qualcomm Incorporated Apparatus for selective word-line boost on a memory cell

Also Published As

Publication number Publication date
JP2016100041A (ja) 2016-05-30
US20160148659A1 (en) 2016-05-26
KR102427825B1 (ko) 2022-08-01
CN105788621A (zh) 2016-07-20
US9502119B2 (en) 2016-11-22
KR20160060557A (ko) 2016-05-30
CN105788621B (zh) 2019-08-20

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