KR102427825B1 - 분배된 커패시티브 지연 추적 부스트-지원 회로 - Google Patents

분배된 커패시티브 지연 추적 부스트-지원 회로 Download PDF

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Publication number
KR102427825B1
KR102427825B1 KR1020150159782A KR20150159782A KR102427825B1 KR 102427825 B1 KR102427825 B1 KR 102427825B1 KR 1020150159782 A KR1020150159782 A KR 1020150159782A KR 20150159782 A KR20150159782 A KR 20150159782A KR 102427825 B1 KR102427825 B1 KR 102427825B1
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South Korea
Prior art keywords
voltage
boosting
boost
distributed
wordline
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KR1020150159782A
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English (en)
Korean (ko)
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KR20160060557A (ko
Inventor
바즈코스키 마치에이
장-마이클 후버
라비 벤카테사
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삼성전자주식회사
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Publication of KR20160060557A publication Critical patent/KR20160060557A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1020150159782A 2014-11-20 2015-11-13 분배된 커패시티브 지연 추적 부스트-지원 회로 Active KR102427825B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462082611P 2014-11-20 2014-11-20
US62/082,611 2014-11-20
US14/813,103 2015-07-29
US14/813,103 US9502119B2 (en) 2014-11-20 2015-07-29 Distributed capacitive delay tracking boost-assist circuit

Publications (2)

Publication Number Publication Date
KR20160060557A KR20160060557A (ko) 2016-05-30
KR102427825B1 true KR102427825B1 (ko) 2022-08-01

Family

ID=56010861

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150159782A Active KR102427825B1 (ko) 2014-11-20 2015-11-13 분배된 커패시티브 지연 추적 부스트-지원 회로

Country Status (4)

Country Link
US (1) US9502119B2 (enExample)
JP (1) JP6560965B2 (enExample)
KR (1) KR102427825B1 (enExample)
CN (1) CN105788621B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106898371B (zh) * 2017-02-24 2020-08-28 中国科学院上海微系统与信息技术研究所 三维存储器读出电路及其字线与位线电压配置方法
US11170830B2 (en) * 2020-02-11 2021-11-09 Taiwan Semiconductor Manufacturing Company Limited Word line driver for low voltage operation
US11705183B2 (en) * 2020-08-28 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Word line booster circuit and method
CN115731964B (zh) * 2021-08-27 2026-01-13 长鑫存储技术有限公司 存储器和存储器的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
KR0137317B1 (ko) * 1994-12-29 1998-04-29 김광호 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
JPH10228773A (ja) * 1997-02-14 1998-08-25 Hitachi Ltd ダイナミック型ｒａｍ
JP3412800B2 (ja) * 1997-05-27 2003-06-03 富士通株式会社 電圧発生回路を有した半導体装置
JP2001067868A (ja) * 1999-08-31 2001-03-16 Mitsubishi Electric Corp 半導体記憶装置
US7921388B2 (en) * 2006-09-18 2011-04-05 International Business Machines Corporation Wordline booster design structure and method of operating a wordine booster circuit
US8493812B2 (en) * 2010-10-28 2013-07-23 International Business Machines Corporation Boost circuit for generating an adjustable boost voltage
US8300446B2 (en) * 2010-12-13 2012-10-30 Texas Instruments Incorporated Ferroelectric random access memory with single plate line pulse during read
US8724373B2 (en) * 2011-09-12 2014-05-13 Qualcomm Incorporated Apparatus for selective word-line boost on a memory cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
인용발명 1: 미국 특허출원공개공보 US2008/0068901호(2008.03.20.) 1부.*
인용발명 2: 미국 특허공보 US4506350(1985.03.19.) 1부.*

Also Published As

Publication number Publication date
US9502119B2 (en) 2016-11-22
KR20160060557A (ko) 2016-05-30
JP2016100041A (ja) 2016-05-30
JP6560965B2 (ja) 2019-08-14
CN105788621B (zh) 2019-08-20
CN105788621A (zh) 2016-07-20
US20160148659A1 (en) 2016-05-26

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