JP6559597B2 - ハニカム構造体の製造方法 - Google Patents
ハニカム構造体の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 105
- 239000000377 silicon dioxide Substances 0.000 claims description 49
- 239000002994 raw material Substances 0.000 claims description 41
- 238000005192 partition Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 22
- 229910052878 cordierite Inorganic materials 0.000 claims description 22
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 22
- 238000010304 firing Methods 0.000 claims description 19
- 238000000465 moulding Methods 0.000 claims description 11
- 238000001125 extrusion Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 239000011148 porous material Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims 1
- 239000003921 oil Substances 0.000 description 30
- 239000004927 clay Substances 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000000746 purification Methods 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000004898 kneading Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
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Description
本実施形態のハニカム構造体の製造方法によって製造されるハニカム構造体1は、図1及び図2に示すように、流体の流路を形成する一方の端面2aから他方の端面2bまで延びる複数のセル3を区画形成する格子状の隔壁4を有するハニカム構造部5と、ハニカム構造部5の周囲に設けられた外周壁部6とを備え、略円柱状を呈して構成されている。
式(1): O1 = (100×V)/m
式(2): O2 = (93×V)/m
始めに、吸油量及びBET比表面積がそれぞれ異なる複数種類のシリカの粉末を用意する。そして、上述した測定方法等により、それぞれ吸油量、BET比表面積、嵩密度、50%粒子径についての各種性状の測定を行う。なお、得られた測定結果を下記表1に示す。本実施例では、表1に示すように、実施例1〜7、及び比較例1〜8のそれぞれのハニカム構造体を製造するために、合計14種類の多孔質シリカが用意されている。比較例1は結晶質シリカであり、その他は多孔質シリカである。
上記の通り、各種性状の測定が行われた多孔質シリカを、一定比率のコージェライト組成を含む成形原料に対してそれぞれ同量ずつ添加し、坏土化することにより押出成形用の成形原料を調製する(原料調製工程)。坏土化とは、セラミックス成形原料に助剤、水等を添加して混練し、可塑性の練り土にすることである。このとき、坏土硬度が同一となるように、成形原料及び多孔質シリカの混合物に対し、水分の添加量の調整を行っている。その結果、一定の坏土硬度からなる複数の成形原料が得られる。
坏土化された成形原料に含まれる水分の含有量を測定し、坏土水分率を算出した。すなわち、多孔質シリカ及び水分を含む成形原料の全重量を100とした場合の水分の比率を%で表したものである。算出された坏土水分率を下記表1に示す。
成形原料を押出成形機を用いて押出成形する(押出工程)。これにより、複数のセルが区画形成された格子状の隔壁を有するハニカム成形体が得られる。なお、押出成形機の押出口に取設する成形用口金を一定のものとすることにより、それぞれの多孔質シリカを添加して形成されたハニカム成形体のセル密度、隔壁厚さ等の各項目は同一のものである。押出成形されたハニカム成形体を乾燥させ、更に一定のサイズに切断する。
乾燥及び切断を経たハニカム成形体を焼成炉内に投入し、規定の焼成温度及び焼成時間の焼成条件による焼成を行う(焼成工程)。これにより、コージェライト成分を含むハニカム構造体(コージェライトハニカム)を得ることができる。本実施例では、実施例1〜7、及び比較例1〜8の合計15種類のハニカム構造体が形成される。ハニカム構造体のセル形状は四角セルであり、セル密度は46.5セル/cm2、隔壁厚さは0.089mm、直径は110mm、長さは97mmである。
得られたそれぞれのハニカム構造体に対し、ハニカム構造体の隔壁のハニカム気孔率を水銀圧入法に準拠して測定を行った。測定されたハニカム気孔率を下記表1に示す。
実施例1〜7、比較例1〜8のそれぞれのハニカム構造体、特に端面を目視により確認し、乾燥時に成形原料中の水分の蒸発に伴う隔壁の収縮及び変形が生じ、隔壁の一部が分断された“隔壁切れ”の発生の有無を評価した。評価結果を下記表1に示す。
ライトオフ性能は、ハニカム構造体に公知の方法で三元触媒を坦持し、NEDCモードのcold phaseにおける特定炭化水素換算のTHC(Total Hydro−Carbon)の残存率に基づいて評価した。この場合、比較例1のTHC残存率を1.00とし、これに対するTHCの残存量が0.97未満のものを“良”、0.97以上0.99未満のものを可、0.99以上のものを“不可”として判定した。THC残存率の測定結果を下記表1に示す。
隔壁切れの評価項目、及び、ライトオフ性能のいずれの評価項目においても“良”となった場合は、総合的な判定として“良”とした。一方、少なくとも一方の評価項目が“可”の場合は総合判定として“可”、少なくとも一方の評価項目が“不可”の場合は、総合判定として“不可”とした。その結果を下記表1に示す。
横軸をBET比表面積、縦軸を吸油量とし、実施例1〜7、及び比較例1〜8のそれぞれの値についてプロットした結果のグラフを図3に示す。これにより、本発明のハニカム構造体の製造方法において、グラフ中のハッチングされた領域を満たすBET比表面積及び吸油量の多孔質シリカを好適に使用することができ、隔壁切れのない、ライトオフ性能に優れたハニカム構造体を製造することができると想定される。
横軸を坏土水分率、縦軸をハニカム気孔率とし、実施例1〜7、及び比較例1〜8のそれぞれの値についてプロットした結果のグラフを図4に示す。これにより、本発明のハニカム構造体の製造方法において、グラフ中のハッチングされた領域を満たす成形原料の坏土水分率とハニカム気孔率であれば、隔壁切れのない、ライトオフ性能に優れたハニカム構造体となることが想定される。
Claims (5)
- 無機造孔材として多孔質シリカの粉末を添加して坏土化した成形原料を調製する原料調製工程と、
得られた前記成形原料をハニカム成形体に押出成形する押出工程と、
押出成形された前記ハニカム成形体を焼成し、流体の流路となる一方の端面から他方の端面まで延びる複数のセルを区画形成する隔壁を有するコージェライト成分を含むハニカム構造体を形成する焼成工程と
を備え、
前記成形原料に添加される前記多孔質シリカの吸油量は、
50〜190ml/100gの範囲であり、
前記多孔質シリカのBET比表面積は、
340〜690m2/gであるハニカム構造体の製造方法。 - 前記多孔質シリカの嵩密度は、
0.15〜0.64g/cm3の範囲である請求項1に記載のハニカム構造体の製造方法。 - 前記多孔質シリカの50%粒子径(D50)は、
4〜24μmの範囲である請求項1または2に記載のハニカム構造体の製造方法。 - 前記ハニカム構造体のハニカム気孔率は、
40〜55%の範囲である請求項1〜3のいずれか一項に記載のハニカム構造体の製造方法。 - 前記多孔質シリカは、
前記焼成工程で溶融し、前記成形原料に含まれる他の成分と反応することでコージェライトに変換され、前記ハニカム構造体の一部を構成する請求項1〜4のいずれか一項に記載のハニカム構造体の製造方法。
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