JP6552477B2 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP6552477B2 JP6552477B2 JP2016249474A JP2016249474A JP6552477B2 JP 6552477 B2 JP6552477 B2 JP 6552477B2 JP 2016249474 A JP2016249474 A JP 2016249474A JP 2016249474 A JP2016249474 A JP 2016249474A JP 6552477 B2 JP6552477 B2 JP 6552477B2
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- 238000000034 method Methods 0.000 title claims description 92
- 238000005530 etching Methods 0.000 title claims description 38
- 239000007789 gas Substances 0.000 claims description 149
- 238000012545 processing Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 41
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000004215 Carbon black (E152) Substances 0.000 claims description 12
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052756 noble gas Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 229910019236 CoFeB Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 78
- 230000000052 comparative effect Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- -1 hydrogen ions Chemical class 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Hall/Mr Elements (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Magnetic Heads (AREA)
Description
<実験サンプル1の作成における方法MTの処理条件>
・工程ST1
チャンバの圧力:30[mTorr](4[Pa])
Krガスの流量:200[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:6[秒]
・工程ST2
チャンバの圧力:10[mTorr](1.333[Pa])
第1のガス中のKrガスの流量:170[sccm]
第1のガス中のメタンガスの流量:30[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・工程ST3
チャンバの圧力:10[mTorr](1.333[Pa])
第2のガス中の酸素(O2)ガスの流量:10[sccm]
第2のガス中の一酸化炭素ガスの流量:140[sccm]
第2のガス中のNeガスの流量:50[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・工程ST2及び工程ST3の繰り返し回数:25回
<比較サンプル1の作成における第1〜第3の工程の処理条件>
・第1の工程
チャンバの圧力:30[mTorr](4[Pa])
Krガスの流量:200[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:6[秒]
・第2の工程
チャンバの圧力:10[mTorr](1.333[Pa])
Krガスの流量:170[sccm]
メタンガスの流量:30[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・第3の工程
チャンバの圧力:10[mTorr](1.333[Pa])
水素(H2)ガスの流量:100[sccm]
窒素(N2)ガスの流量:50[sccm]
Neガスの流量:50[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・第2の工程と第3の工程の繰り返し回数:25回
Claims (10)
- 磁気抵抗効果素子の製造において実行される被加工物のエッチング方法であって、
前記被加工物は、第1の多層膜、及び、該第1の多層膜と積層された第2の多層膜を有し、前記第1の多層膜は、第1の磁性層及び第2の磁性層、並びに、該第1の磁性層と該第2の磁性層の間に設けられたトンネルバリア層を含み、前記第2の多層膜は、前記磁気抵抗効果素子においてピニング層を構成する多層膜であり、
該方法は、
前記第1の多層膜をエッチングする工程と、
プラズマ処理装置のチャンバ内において前記第2の多層膜をエッチングするために、該チャンバ内において炭化水素ガス及び希ガスを含む第1のガスのプラズマを生成する工程と、
第1のガスのプラズマを生成する前記工程において前記被加工物上に形成された炭素を含む堆積物を除去するために、前記チャンバ内において、炭素及び酸素を含有するガス、酸素ガス、並びに、希ガスを含み、水素を含まない第2のガスのプラズマを生成する工程と、
を含むエッチング方法。 - 前記第2のガスは、炭素及び酸素を含有する前記ガスとして一酸化炭素ガス又は二酸化炭素ガスを含む、請求項1に記載の方法。
- 前記第1のガスは、前記炭化水素ガスとしてメタンガスを含む、請求項1又は2に記載のエッチング方法。
- 第1のガスのプラズマを生成する前記工程において、前記第1のガスの前記プラズマからのイオンを前記第2の多層膜に衝突させて該第2の多層膜をエッチングするよう、前記被加工物をその上に搭載したステージの下部電極に高周波が供給される、請求項1〜3の何れか一項に記載のエッチング方法。
- 第2のガスのプラズマを生成する前記工程において、前記高周波が前記下部電極に供給される、請求項4に記載のエッチング方法。
- 前記第1の多層膜をエッチングする前記工程では、前記チャンバ内において前記第1の多層膜をエッチングするために、該チャンバ内において希ガスのみのプラズマが生成される、請求項1〜3の何れか一項に記載のエッチング方法。
- 第1の多層膜をエッチングする前記工程において、前記希ガスのみの前記プラズマからのイオンを前記第1の多層膜に衝突させて該第1の多層膜をエッチングするよう、前記被加工物をその上に搭載したステージの下部電極に高周波が供給される、請求項6に記載のエッチング方法。
- 第1のガスのプラズマを生成する前記工程と第2のガスのプラズマを生成する前記工程とが交互に繰り返される、請求項1〜7の何れか一項に記載のエッチング方法。
- 前記第2の多層膜はコバルト層及び白金層を含む、請求項1〜8の何れか一項に記載のエッチング方法。
- 前記第1の磁性層及び前記第2の磁性層は、CoFeB層であり、前記トンネルバリア層はMgO層である、請求項1〜9の何れか一項に記載のエッチング方法。
Priority Applications (5)
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JP2016249474A JP6552477B2 (ja) | 2016-12-22 | 2016-12-22 | エッチング方法 |
CN201711068815.3A CN108231575B (zh) | 2016-12-22 | 2017-11-03 | 蚀刻方法 |
KR1020170170029A KR102423457B1 (ko) | 2016-12-22 | 2017-12-12 | 에칭 방법 |
US15/841,998 US10181559B2 (en) | 2016-12-22 | 2017-12-14 | Etching method |
TW106144540A TWI720275B (zh) | 2016-12-22 | 2017-12-19 | 蝕刻方法 |
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JP2016249474A JP6552477B2 (ja) | 2016-12-22 | 2016-12-22 | エッチング方法 |
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JP2018107191A JP2018107191A (ja) | 2018-07-05 |
JP6552477B2 true JP6552477B2 (ja) | 2019-07-31 |
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US (1) | US10181559B2 (ja) |
JP (1) | JP6552477B2 (ja) |
KR (1) | KR102423457B1 (ja) |
CN (1) | CN108231575B (ja) |
TW (1) | TWI720275B (ja) |
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US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
US7211195B2 (en) * | 2003-08-04 | 2007-05-01 | Hitachi Global Storage Technologies Netherlands B.V. | Method for providing a liftoff process using a single layer resist and chemical mechanical polishing and sensor formed therewith |
US20100304504A1 (en) | 2009-05-27 | 2010-12-02 | Canon Anelva Corporation | Process and apparatus for fabricating magnetic device |
JP2011253985A (ja) * | 2010-06-03 | 2011-12-15 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5918108B2 (ja) * | 2012-11-16 | 2016-05-18 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6127511B2 (ja) * | 2012-12-28 | 2017-05-17 | 富士通セミコンダクター株式会社 | 磁気抵抗素子、これを用いた磁気記憶装置、及びその製造方法 |
JP6140575B2 (ja) * | 2013-08-26 | 2017-05-31 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6347695B2 (ja) * | 2013-11-20 | 2018-06-27 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
JP6285322B2 (ja) * | 2014-08-26 | 2018-02-28 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
JP2016164955A (ja) * | 2015-03-06 | 2016-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR102384908B1 (ko) * | 2015-11-25 | 2022-04-08 | 삼성전자주식회사 | 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법 |
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- 2017-11-03 CN CN201711068815.3A patent/CN108231575B/zh active Active
- 2017-12-12 KR KR1020170170029A patent/KR102423457B1/ko active IP Right Grant
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- 2017-12-19 TW TW106144540A patent/TWI720275B/zh active
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US20180182957A1 (en) | 2018-06-28 |
CN108231575B (zh) | 2023-04-11 |
TWI720275B (zh) | 2021-03-01 |
CN108231575A (zh) | 2018-06-29 |
US10181559B2 (en) | 2019-01-15 |
KR102423457B1 (ko) | 2022-07-22 |
TW201836007A (zh) | 2018-10-01 |
JP2018107191A (ja) | 2018-07-05 |
KR20180073452A (ko) | 2018-07-02 |
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