JP6539286B2 - エテンを調製するための方法 - Google Patents
エテンを調製するための方法 Download PDFInfo
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- JP6539286B2 JP6539286B2 JP2016559651A JP2016559651A JP6539286B2 JP 6539286 B2 JP6539286 B2 JP 6539286B2 JP 2016559651 A JP2016559651 A JP 2016559651A JP 2016559651 A JP2016559651 A JP 2016559651A JP 6539286 B2 JP6539286 B2 JP 6539286B2
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- 238000000034 method Methods 0.000 title claims description 51
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 title claims description 39
- 239000003054 catalyst Substances 0.000 claims description 94
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 59
- 239000011964 heteropoly acid Substances 0.000 claims description 55
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 48
- 238000006297 dehydration reaction Methods 0.000 claims description 34
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- 239000002253 acid Substances 0.000 claims description 21
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- 239000011148 porous material Substances 0.000 claims description 14
- CGFYHILWFSGVJS-UHFFFAOYSA-N silicic acid;trioxotungsten Chemical compound O[Si](O)(O)O.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 CGFYHILWFSGVJS-UHFFFAOYSA-N 0.000 claims description 11
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- 238000011068 loading method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000012808 vapor phase Substances 0.000 claims description 7
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 claims description 2
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 claims description 2
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
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- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 3
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- 150000001767 cationic compounds Chemical class 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- RNAMYOYQYRYFQY-UHFFFAOYSA-N 2-(4,4-difluoropiperidin-1-yl)-6-methoxy-n-(1-propan-2-ylpiperidin-4-yl)-7-(3-pyrrolidin-1-ylpropoxy)quinazolin-4-amine Chemical compound N1=C(N2CCC(F)(F)CC2)N=C2C=C(OCCCN3CCCC3)C(OC)=CC2=C1NC1CCN(C(C)C)CC1 RNAMYOYQYRYFQY-UHFFFAOYSA-N 0.000 description 1
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- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/30—Tungsten
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
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- B01J2523/00—Constitutive chemical elements of heterogeneous catalysts
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- B01J2523/41—Silicon
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- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/14—Phosphorus; Compounds thereof
- B01J27/186—Phosphorus; Compounds thereof with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J27/188—Phosphorus; Compounds thereof with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium with chromium, molybdenum, tungsten or polonium
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
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- B01J35/61—Surface area
- B01J35/615—100-500 m2/g
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/60—Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
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- B01J35/635—0.5-1.0 ml/g
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- C07C2523/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- C07C2523/24—Chromium, molybdenum or tungsten
- C07C2523/30—Tungsten
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description
18−タングストリン酸:H6[P2W18O62].xH2O
12−タングストリン酸:H3[PW12O40].xH2O
12−タングストケイ酸:H4[SiW12O40].xH2O
セシウムハイドロゲンタングストケイ酸塩:Cs3H[SiW12O40].xH2O
及び、以下のヘテロポリ酸の遊離酸又は部分塩である。
モノカリウムタングストリン酸塩:KH5[P2W18O62].xH2O
モノナトリウム12−タングストケイ酸:NaK3[SiW12O40].xH2O
カリウムタングストリン酸塩:K6[P2W18O62].xH2O
アンモニウムモリブドジリン酸塩:(NH4)6[P2Mo18O62].xH20
カリウムモリブドジバナドリン酸塩:K5[PMoV2O40].xH2O
PV>0.6−0.3x[HPA担持量/触媒の表面積]
を有するヘテロポリタングステン酸担持触媒であり、
ここで、PVは、乾燥担持ヘテロポリタングステン酸触媒の細孔容積(ml/g触媒で測定)であり、HPA担持量は、乾燥担持ヘテロポリ酸触媒中のヘテロポリ酸の量(μモル/g触媒で測定)であり、触媒の表面積は、乾燥担持ヘテロポリタングステン酸触媒の表面積(m2/g触媒で測定)である。
ケイタングステン酸(STA,silicotungstic acid)触媒を、次の例に従う脱水反応を行うのに使用した。
上記方法に従って調製される(下記表1に示すような)STA触媒の塊を、不活性ガス(窒素及びヘリウム)流下で、等温床を有し0.501MPaに加圧された反応管中に充填した。触媒を、窒素(0.01500モル/時間)とヘリウム(0.00107モル/時間)の混合流下で、240℃到達まで2℃/分で加熱し、この温度で8時間保持した後、150℃まで冷却した。
Claims (15)
- エタノールを含む供給物の気相化学的脱水によりエテンを調製するための方法であって、反応器中で担持ヘテロポリ酸触媒を前記供給物と接触させるステップを含み、供給温度は少なくとも250℃であり、前記反応器内の圧力は少なくとも0.80MPaであるが1.80MPa未満であり、前記ヘテロポリ酸がケギン型構造を有する、前記方法。
- 少なくとも252℃の供給温度で行われる、請求項1に記載の方法。
- 供給温度の上限が350℃である、請求項1又は2に記載の方法。
- 反応器内の圧力が、0.90MPa〜1.60MPaである、請求項1〜3のいずれかに記載の方法。
- 供給流圧力が、1.00MPa〜1.80MPaである、請求項1〜4のいずれかに記載の方法。
- 排出流圧力が、0.80MPa〜1.40MPaである、請求項1〜5のいずれかに記載の方法。
- 供給物が、水及び/又はエトキシエタンをさらに含む、請求項1〜6のいずれかに記載の方法。
- 触媒が、反応器内の1つ又は2つ以上の触媒床の形態で提供される、請求項1〜7のいずれかに記載の方法。
- 触媒が、複数の触媒床の形態で提供され、前記複数の触媒床が直列に又は並列に配置される、請求項8に記載の方法。
- 1つ又は2つ以上の触媒床の少なくとも1つが管状固定床、又は流動床である、請求項8又は9に記載の方法。
- 担持ヘテロポリ酸触媒におけるヘテロポリ酸の量が、前記担持ヘテロポリ酸触媒の全重量に基づいて、10重量%〜50重量%の範囲である、請求項1〜10のいずれかに記載の方法。
- 担持ヘテロポリ酸触媒の少なくとも一部が、エタノールを含み、好ましくは水及びエトキシエタンをさらに含む供給物からエテンを調製するための方法で以前用いられたことがある、請求項1〜11のいずれかに記載の方法。
- 担持ヘテロポリ酸触媒が、担持ヘテロポリタングステン酸触媒である、請求項1〜12のいずれかに記載の方法。
- 担持ヘテロポリ酸触媒が、担持ケイタングステン酸、担持リンタングステン酸、担持ケイモリブデン酸、及び担持リンモリブデン酸から選択される請求項1〜12のいずれかに記載の方法。
- 担持ヘテロポリタングステン酸触媒が、以下の特性:
PV>0.6−0.3×[HPA担持量/触媒の表面積]
を有することを特徴とし、
ここで、PVは、乾燥担持ヘテロポリタングステン酸触媒の細孔容積(ml/g触媒で測定)であり、HPA担持量は、乾燥担持ヘテロポリ酸触媒中に存在するヘテロポリ酸の量(μモル/g触媒で測定)であり、触媒の表面積は、前記乾燥担持ヘテロポリタングステン酸触媒の表面積(m2/g触媒で測定)である、請求項13に記載の方法。
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