JP6539010B1 - 太陽電池素子 - Google Patents

太陽電池素子 Download PDF

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Publication number
JP6539010B1
JP6539010B1 JP2019516264A JP2019516264A JP6539010B1 JP 6539010 B1 JP6539010 B1 JP 6539010B1 JP 2019516264 A JP2019516264 A JP 2019516264A JP 2019516264 A JP2019516264 A JP 2019516264A JP 6539010 B1 JP6539010 B1 JP 6539010B1
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Prior art keywords
protective layer
layer
solar cell
electrode
cell element
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JP2019516264A
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Japanese (ja)
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JPWO2019107211A1 (ja
Inventor
松島　徳彦
徳彦 松島
吉田　貴信
貴信 吉田
義生 川島
義生 川島
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
JP2019516264A 2017-11-30 2018-11-20 太陽電池素子 Active JP6539010B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017230825 2017-11-30
JP2017230825 2017-11-30
PCT/JP2018/042747 WO2019107211A1 (ja) 2017-11-30 2018-11-20 太陽電池素子

Publications (2)

Publication Number Publication Date
JP6539010B1 true JP6539010B1 (ja) 2019-07-03
JPWO2019107211A1 JPWO2019107211A1 (ja) 2019-12-12

Family

ID=66663885

Family Applications (1)

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JP2019516264A Active JP6539010B1 (ja) 2017-11-30 2018-11-20 太陽電池素子

Country Status (4)

Country Link
JP (1) JP6539010B1 (zh)
CN (1) CN111492492A (zh)
TW (1) TWI693723B (zh)
WO (1) WO2019107211A1 (zh)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3670527B2 (ja) * 1999-08-23 2005-07-13 京セラ株式会社 光半導体素子収納用パッケージ
JP2004276442A (ja) * 2003-03-17 2004-10-07 Sumika Plastech Co Ltd 成形体
JP2005039110A (ja) * 2003-07-17 2005-02-10 Matsushita Electric Ind Co Ltd 回路基板
US20090286349A1 (en) * 2008-05-13 2009-11-19 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation
US20110272024A1 (en) * 2010-04-13 2011-11-10 Applied Materials, Inc. MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS
JP2012216732A (ja) * 2011-04-01 2012-11-08 Mitsubishi Electric Corp 薄膜太陽電池基板の製造方法および薄膜太陽電池の製造方法
JP2013051143A (ja) * 2011-08-31 2013-03-14 Fujikura Ltd 光電変換素子用電極、及び、光電変換素子
WO2013031939A1 (ja) * 2011-08-31 2013-03-07 株式会社フジクラ 光電変換素子用電極、その製造方法及び、光電変換素子
JP2013106491A (ja) * 2011-11-16 2013-05-30 Tdk Corp 高分子アクチュエータ
KR101890324B1 (ko) * 2012-06-22 2018-09-28 엘지전자 주식회사 태양 전지 모듈 및 이에 적용되는 리본 결합체
JP2014146766A (ja) * 2013-01-30 2014-08-14 Mitsubishi Electric Corp 太陽電池の製造方法及び太陽電池
JP2014154656A (ja) * 2013-02-07 2014-08-25 Dainippon Screen Mfg Co Ltd 結晶シリコン型太陽電池、およびその製造方法
JP2014157871A (ja) * 2013-02-14 2014-08-28 Hitachi Chemical Co Ltd パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
JP2015153846A (ja) * 2014-02-13 2015-08-24 太陽誘電株式会社 電気化学デバイス及び製造方法
EP2922101A1 (en) * 2014-03-19 2015-09-23 Institut für Solarenergieforschung GmbH Conductive polymer/Si interfaces at the backside of solar cells
WO2016047564A1 (ja) * 2014-09-22 2016-03-31 京セラ株式会社 太陽電池素子
JP6495713B2 (ja) * 2015-03-30 2019-04-03 京セラ株式会社 太陽電池素子およびその製造方法
JP2017069247A (ja) * 2015-09-28 2017-04-06 京セラ株式会社 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法
JP6203990B1 (ja) * 2016-02-26 2017-09-27 京セラ株式会社 太陽電池素子

Also Published As

Publication number Publication date
CN111492492A (zh) 2020-08-04
JPWO2019107211A1 (ja) 2019-12-12
TW201926731A (zh) 2019-07-01
WO2019107211A1 (ja) 2019-06-06
TWI693723B (zh) 2020-05-11

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