JP6538307B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP6538307B2
JP6538307B2 JP2014063617A JP2014063617A JP6538307B2 JP 6538307 B2 JP6538307 B2 JP 6538307B2 JP 2014063617 A JP2014063617 A JP 2014063617A JP 2014063617 A JP2014063617 A JP 2014063617A JP 6538307 B2 JP6538307 B2 JP 6538307B2
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film
oxide
insulating film
conductive
semiconductor
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Japanese (ja)
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JP2014209613A (ja
JP2014209613A5 (enExample
Inventor
山崎　舜平
舜平 山崎
正美 神長
正美 神長
安孝 中澤
安孝 中澤
行徳 島
行徳 島
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2014209613A5 publication Critical patent/JP2014209613A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2014063617A 2013-03-28 2014-03-26 半導体装置及びその作製方法 Active JP6538307B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014063617A JP6538307B2 (ja) 2013-03-28 2014-03-26 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013069163 2013-03-28
JP2013069163 2013-03-28
JP2014063617A JP6538307B2 (ja) 2013-03-28 2014-03-26 半導体装置及びその作製方法

Related Child Applications (1)

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JP2018102290A Division JP6637109B2 (ja) 2013-03-28 2018-05-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2014209613A JP2014209613A (ja) 2014-11-06
JP2014209613A5 JP2014209613A5 (enExample) 2017-04-20
JP6538307B2 true JP6538307B2 (ja) 2019-07-03

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Family Applications (5)

Application Number Title Priority Date Filing Date
JP2014063617A Active JP6538307B2 (ja) 2013-03-28 2014-03-26 半導体装置及びその作製方法
JP2018102290A Active JP6637109B2 (ja) 2013-03-28 2018-05-29 半導体装置
JP2019229045A Active JP6916265B2 (ja) 2013-03-28 2019-12-19 半導体装置
JP2021116924A Active JP7135173B2 (ja) 2013-03-28 2021-07-15 表示装置
JP2022138094A Withdrawn JP2022176196A (ja) 2013-03-28 2022-08-31 表示装置

Family Applications After (4)

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JP2018102290A Active JP6637109B2 (ja) 2013-03-28 2018-05-29 半導体装置
JP2019229045A Active JP6916265B2 (ja) 2013-03-28 2019-12-19 半導体装置
JP2021116924A Active JP7135173B2 (ja) 2013-03-28 2021-07-15 表示装置
JP2022138094A Withdrawn JP2022176196A (ja) 2013-03-28 2022-08-31 表示装置

Country Status (2)

Country Link
US (4) US10566455B2 (enExample)
JP (5) JP6538307B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10566455B2 (en) * 2013-03-28 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102290801B1 (ko) 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6227396B2 (ja) * 2013-12-20 2017-11-08 株式会社ジャパンディスプレイ 薄膜トランジスタ及びそれを用いた表示装置
CN112233982A (zh) 2014-02-28 2021-01-15 株式会社半导体能源研究所 半导体装置的制造方法
JP6618779B2 (ja) * 2014-11-28 2019-12-11 株式会社半導体エネルギー研究所 半導体装置
CN104880879A (zh) * 2015-06-19 2015-09-02 京东方科技集团股份有限公司 Coa阵列基板及其制造方法、显示装置
SG10201608737QA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
DE112016005330T5 (de) 2015-11-20 2018-08-23 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung oder Anzeigevorrichtung, die die Halbleitervorrichtung beinhaltet
US9793409B2 (en) * 2016-01-14 2017-10-17 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel
WO2017130073A1 (ja) * 2016-01-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する表示装置
US9954003B2 (en) * 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9882064B2 (en) * 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10333004B2 (en) * 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US10916430B2 (en) 2016-07-25 2021-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP7029907B2 (ja) * 2017-09-07 2022-03-04 株式会社ジャパンディスプレイ 表示装置
JP7083675B2 (ja) * 2018-03-23 2022-06-13 株式会社ジャパンディスプレイ 表示装置
KR102774331B1 (ko) * 2020-04-10 2025-03-05 삼성디스플레이 주식회사 표시장치 및 이의 제조방법
US11424292B2 (en) 2020-06-22 2022-08-23 Western Digital Technologies, Inc. Memory array containing capped aluminum access lines and method of making the same

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW386238B (en) * 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2002110631A (ja) 2000-09-29 2002-04-12 Toshiba Corp 多層薄膜パターンの製造方法
KR100866976B1 (ko) 2002-09-03 2008-11-05 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 제조방법
JP2004172150A (ja) * 2002-11-15 2004-06-17 Nec Kagoshima Ltd 積層構造配線の製造方法
KR100938885B1 (ko) * 2003-06-30 2010-01-27 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 제조방법
JP4093147B2 (ja) 2003-09-04 2008-06-04 三菱電機株式会社 エッチング液及びエッチング方法
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
JP5008323B2 (ja) 2005-03-28 2012-08-22 株式会社半導体エネルギー研究所 メモリ装置
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
US7229863B2 (en) * 2005-10-25 2007-06-12 Chunghwa Picture Tubes, Ltd. Method for fabricating thin film transistors
KR101165472B1 (ko) * 2005-12-30 2012-07-13 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
KR101182403B1 (ko) 2008-12-22 2012-09-13 한국전자통신연구원 투명 트랜지스터 및 그의 제조 방법
TWI596741B (zh) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101940962B1 (ko) 2009-10-09 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011221098A (ja) 2010-04-05 2011-11-04 Seiko Epson Corp 電気光学装置用基板、電気光学装置、及び電子機器
JP5540843B2 (ja) 2010-04-05 2014-07-02 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、及び電子機器
KR101717933B1 (ko) * 2010-04-14 2017-03-21 삼성디스플레이 주식회사 표시기판 및 그 제조방법
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2012018970A (ja) 2010-07-06 2012-01-26 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
TWI432865B (zh) 2010-12-01 2014-04-01 Au Optronics Corp 畫素結構及其製作方法
CN103348484B (zh) 2011-02-07 2016-03-30 夏普株式会社 有源矩阵基板、显示面板和显示装置
JP2012189726A (ja) * 2011-03-09 2012-10-04 Kobe Steel Ltd Ｔｉ合金バリアメタルを用いた配線膜および電極、並びにＴｉ合金スパッタリングターゲット
JP5171990B2 (ja) 2011-05-13 2013-03-27 株式会社神戸製鋼所 Ｃｕ合金膜および表示装置
KR20120138074A (ko) * 2011-06-14 2012-12-24 삼성디스플레이 주식회사 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101934977B1 (ko) 2011-08-02 2019-03-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP6006558B2 (ja) * 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
CN102790012A (zh) 2012-07-20 2012-11-21 京东方科技集团股份有限公司 阵列基板的制造方法及阵列基板、显示装置
US10566455B2 (en) * 2013-03-28 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2018139325A (ja) 2018-09-06
JP7135173B2 (ja) 2022-09-12
JP2014209613A (ja) 2014-11-06
US10566455B2 (en) 2020-02-18
JP2021166312A (ja) 2021-10-14
US20140291672A1 (en) 2014-10-02
US20210184049A1 (en) 2021-06-17
US11024742B2 (en) 2021-06-01
US11990551B2 (en) 2024-05-21
US20240379856A1 (en) 2024-11-14
JP6637109B2 (ja) 2020-01-29
JP6916265B2 (ja) 2021-08-11
JP2025010227A (ja) 2025-01-20
JP2022176196A (ja) 2022-11-25
US20200185533A1 (en) 2020-06-11
JP2020047952A (ja) 2020-03-26

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