JP6529679B2 - 赤外線撮像素子、赤外線撮像アレイおよび赤外線撮像素子の製造方法 - Google Patents
赤外線撮像素子、赤外線撮像アレイおよび赤外線撮像素子の製造方法 Download PDFInfo
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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Description
表面と裏面とを有し、回路部が設けられた基板と、
基板の表面の上方に配置された支持脚配線と、
支持脚配線の上に保持され、支持脚配線を介して回路部に電気的に接続されたダイオードが設けられた赤外線検知部と、を含み、
赤外線検知部の温度変化を、ダイオードの電気信号の変化として回路部で検出する赤外線撮像素子であって、
基板、支持脚配線、および赤外線検知部は、基板の表面に垂直な方向に、互いに間隔をおいて積層されたことを特徴とする赤外線撮像素子である。
図1は、全体が100で表される、本発明の実施の形態1にかかる赤外線撮像素子の断面図であり、図2は、図1の赤外線撮像素子100の第1基板50をZ方向に見た場合の概略平面図である。ここで、図1の断面図は、理解を容易にするために、図2の破線A−Aに沿った断面図とする。赤外線撮像素子100は、赤外線撮像アレイの1つの画素に対応する。
1)受光面積である赤外線検知部13のXY平面の面積に比例し、
2)赤外線検知部13からの熱の逃げやすさ(以降、「熱コンダクタンス」と呼ぶ)に反比例する、ことになる。
図11は、全体が200で表される、本発明の実施の形態2にかかる赤外線撮像素子の断面図であり、図12は、図11の赤外線撮像素子200の第1基板50をZ方向に見た場合の概略平面図である。ここで、図11の断面図は、理解を容易にするために、図12の破線B−Bに沿った断面図とする。図11、12中、図1、2と同一符合は同一または相当箇所を示す。
図14aは、全体が300で表される、本発明の実施の形態3にかかる赤外線撮像素子の断面図である。また、図14b、14cは、全体がそれぞれ310、320で表される、本発明の実施の形態3にかかる他の赤外線撮像素子の断面図である。図14a〜14c中、図1と同一符合は、同一または相当箇所を示す。
図15は、全体が400で表される、本発明の実施の形態4にかかる赤外線撮像素子の断面図である。図15において、図1と同一符合は、同一または相当箇所を表す。
図18は、全体が500で表される、本発明の実施の形態5にかかる赤外線撮像素子の断面図である。図18において、図1と同一符合は、同一または相当箇所を表す。
Claims (8)
- 支持脚配線4と、
前記支持脚配線4に設けられたメタル層20と、
前記支持脚配線4の上に保持され、前記支持脚配線4を介して前記メタル層20に電気的に接続されたダイオード2が設けられた赤外線検知部13と、を備えた第1基板50と、
表面と裏面とを有し、回路部32が設けられた基板31と、
前記基板31の表面に設けられたメタル層35と、を備えた第2基板51と、を含み、
前記第1基板50と前記第2基板51とが貼り合わされて、前記メタル層20と前記メタル層35とが接合され、
前記赤外線検知部13の温度変化を、前記ダイオード2の電気信号の変化として前記回路部32で検出する赤外線撮像素子であって、
前記基板31、前記支持脚配線4、および前記赤外線検知部13は、前記基板31の表面に垂直な方向Zに、互いに間隔をおいて積層され、
前記支持脚配線4は、前記基板31の表面上に設けられた前記メタル層35の上の、マイクロバンプとなる前記メタル層20にその一端が接続され、前記赤外線検知部13に設けられたメタル配線15に他端が接続され、
前記支持脚配線4の、前記メタル層20に接続された部分の直上には、前記支持脚配線4とは電気的に接続されないメタル配線15が設けられ、その上に、前記赤外線検知部13と同一構造であり、前記赤外線検知部13から分離されたBOX酸化膜3および絶縁膜7からなり、前記マイクロバンプの接合強度を増強するマイクロバンプ接合強度増強梁23が設けられたことを特徴とする赤外線撮像素子。 - 前記赤外線検知部13の、前記基板31と反対側の表面が、電磁波吸収構造体を備えることを特徴とする請求項1に記載の赤外線撮像素子。
- 前記電磁波吸収構造体は、前記赤外線検知部13の上に形成された周期構造の突起部60、前記赤外線検知部13の表面に設けられたテクスチュア構造部63、および前記赤外線検知部13の上に設けられた赤外線吸収膜65、からなる群から選択される請求項2に記載の赤外線撮像素子。
- 前記赤外線検知部13は、前記基板31の表面に垂直な方向の膜厚が部分的に薄い領域30を有することを特徴とする請求項1〜3のいずれかに記載の赤外線撮像素子。
- 前記基板31の表面上に、赤外線反射膜40が設けられたことを特徴とする請求項1〜4のいずれかに記載の赤外線撮像素子。
- 請求項1〜5のいずれかに記載の赤外線撮像素子を、アレイ状に配置したことを特徴とする赤外線撮像アレイ。
- 前記回路部32は、隣接する前記赤外線撮像素子の間に跨がって設けられたことを特徴とする請求項6に記載の赤外線撮像アレイ。
- 第1基板50を準備する工程であって、
基板1の上にBOX酸化層3およびシリコン層12を有するSOI基板を準備する工程と、
前記シリコン層12を加工してダイオード2を形成する工程と、
前記BOX酸化層3の上に絶縁膜7を形成した後、前記絶縁膜7を開口して前記ダイオード2の表面を露出させ前記ダイオード2に接続された第1メタル配線15および前記絶縁膜7の一部の上に形成された第2メタル配線15を形成する工程と、
前記BOX酸化層3の上に犠牲層10を形成する工程と、
前記犠牲層10の上に、前記第1メタル配線15に一端が接続された支持脚配線4を形成する工程と、
前記絶縁膜7の上に形成された前記第2メタル配線15の直上の、前記支持脚配線4の上に第1メタル層20を形成し、前記支持脚配線4の他端に前記第1メタル層20を接続する工程と、
を含む工程と、
第2基板51を準備する工程であって、
表面と裏面とを有する基板31を準備する工程と、
前記基板31の表面側に回路部32を形成する工程と、
前記回路部32に電気的に接続された第2メタル層35を形成する工程と、
を含む工程と、
前記第1基板50の表面と前記第2基板51の表面とが対向するように、前記第1メタル層20と前記第2メタル層35とを接合する工程と、
前記基板1を裏面側から除去して前記BOX酸化層3を露出させる工程と、
前記犠牲層10を除去する工程と、
前記BOX酸化層3と前記絶縁膜7とを部分的に除去し、前記第1メタル層20の上に前記支持脚配線4を介して接続された前記第2メタル配線15の上に、赤外線検知部13と同一構造であり、前記赤外線検知部13から分離したマイクロバンプ接合強度増強梁23を形成する工程と、
を含むことを特徴とする赤外線撮像素子の製造方法。
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US5627112A (en) | 1995-11-13 | 1997-05-06 | Rockwell International Corporation | Method of making suspended microstructures |
JP3608298B2 (ja) * | 1996-07-05 | 2005-01-05 | 株式会社ニコン | 熱型赤外線センサ及びその製造方法 |
JPH10185681A (ja) * | 1996-11-08 | 1998-07-14 | Mitsuteru Kimura | 熱型赤外線センサとその製造方法およびこれを用いた赤外線イメージセンサ |
JPH11211558A (ja) * | 1998-01-27 | 1999-08-06 | Mitsubishi Electric Corp | センサ及びセンサアレイ |
EP1141669B1 (en) * | 1998-12-04 | 2007-02-28 | Daewoo Electronics Corporation | Infrared bolometer and method for manufacturing same |
CN1163733C (zh) | 1998-12-04 | 2004-08-25 | 株式会社大宇电子 | 红外线辐射热测量器及其制造方法 |
JP2001304958A (ja) * | 2000-04-24 | 2001-10-31 | Murata Mfg Co Ltd | 赤外線センサ |
GB2411521A (en) * | 2004-02-27 | 2005-08-31 | Qinetiq Ltd | Fabrication method for micro-sensor device |
FR2875298B1 (fr) * | 2004-09-16 | 2007-03-02 | Commissariat Energie Atomique | Detecteur thermique de rayonnement electromagnetique comportant une membrane absorbante fixee en suspension |
US7442599B2 (en) * | 2006-09-15 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Silicon/germanium superlattice thermal sensor |
DE102007008381A1 (de) * | 2007-02-21 | 2008-08-28 | Robert Bosch Gmbh | Strahlungssensorelement, Verfahren zur Herstellung eines Strahlungssensorelements und Sensorfeld |
KR20090065941A (ko) * | 2007-12-18 | 2009-06-23 | 한국전자통신연구원 | 다층 구조의 볼로미터 및 그 제조 방법 |
JP5665599B2 (ja) * | 2011-02-24 | 2015-02-04 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
WO2014093724A1 (en) * | 2012-12-14 | 2014-06-19 | Flir Systems, Inc. | Segmented focal plane array architecture |
KR102040149B1 (ko) * | 2013-02-01 | 2019-11-04 | 삼성전자주식회사 | 적외선 검출기 |
US10119865B2 (en) | 2013-06-10 | 2018-11-06 | Panasonic Intellectual Property Management Co., Ltd. | Infrared sensor having improved sensitivity and reduced heat generation |
US9349770B2 (en) * | 2014-02-11 | 2016-05-24 | Semiconductor Components Industries, Llc | Imaging systems with infrared pixels having increased quantum efficiency |
-
2018
- 2018-01-29 JP JP2018536307A patent/JP6529679B2/ja active Active
- 2018-01-29 CN CN201880032188.4A patent/CN110651173B/zh active Active
- 2018-01-29 US US16/603,103 patent/US11231326B2/en active Active
- 2018-01-29 EP EP18806337.4A patent/EP3633332B1/en active Active
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CN110651173A (zh) | 2020-01-03 |
CN110651173B (zh) | 2022-02-08 |
EP3633332A1 (en) | 2020-04-08 |
EP3633332B1 (en) | 2023-10-25 |
EP3633332A4 (en) | 2020-06-24 |
US11231326B2 (en) | 2022-01-25 |
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US20200271527A1 (en) | 2020-08-27 |
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