JP6520857B2 - 高周波モジュール及び弾性波フィルタの製造方法 - Google Patents

高周波モジュール及び弾性波フィルタの製造方法 Download PDF

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Publication number
JP6520857B2
JP6520857B2 JP2016155024A JP2016155024A JP6520857B2 JP 6520857 B2 JP6520857 B2 JP 6520857B2 JP 2016155024 A JP2016155024 A JP 2016155024A JP 2016155024 A JP2016155024 A JP 2016155024A JP 6520857 B2 JP6520857 B2 JP 6520857B2
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Prior art keywords
elastic wave
wave filter
impedance
gain
matching impedance
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JP2016155024A
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Japanese (ja)
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JP2018023074A (ja
JP2018023074A5 (enExample
Inventor
千尋 照田
千尋 照田
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to JP2016155024A priority Critical patent/JP6520857B2/ja
Priority to US15/649,677 priority patent/US10673410B2/en
Priority to CN201710604182.7A priority patent/CN107689783B/zh
Priority to KR1020170098201A priority patent/KR101944625B1/ko
Publication of JP2018023074A publication Critical patent/JP2018023074A/ja
Publication of JP2018023074A5 publication Critical patent/JP2018023074A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/48—Coupling means therefor
    • H03H9/52—Electric coupling means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/0004—Impedance-matching networks
    • H03H9/0009—Impedance-matching networks using surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6436—Coupled resonator filters having one acoustic track only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
JP2016155024A 2016-08-05 2016-08-05 高周波モジュール及び弾性波フィルタの製造方法 Active JP6520857B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016155024A JP6520857B2 (ja) 2016-08-05 2016-08-05 高周波モジュール及び弾性波フィルタの製造方法
US15/649,677 US10673410B2 (en) 2016-08-05 2017-07-14 Radio-frequency (RF) module, and method of manufacturing elastic wave filter
CN201710604182.7A CN107689783B (zh) 2016-08-05 2017-07-21 高频模块以及弹性波滤波器的制造方法
KR1020170098201A KR101944625B1 (ko) 2016-08-05 2017-08-02 고주파 모듈 및 탄성파 필터의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016155024A JP6520857B2 (ja) 2016-08-05 2016-08-05 高周波モジュール及び弾性波フィルタの製造方法

Publications (3)

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JP2018023074A JP2018023074A (ja) 2018-02-08
JP2018023074A5 JP2018023074A5 (enExample) 2018-05-17
JP6520857B2 true JP6520857B2 (ja) 2019-05-29

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US (1) US10673410B2 (enExample)
JP (1) JP6520857B2 (enExample)
KR (1) KR101944625B1 (enExample)
CN (1) CN107689783B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10320363B2 (en) * 2016-08-05 2019-06-11 Murata Manufacturing Co., Ltd. High-frequency module
US11870421B2 (en) * 2019-10-23 2024-01-09 Skyworks Solutions, Inc. Surface acoustic wave resonator with suppressed transverse modes using second bus bar
US11626855B2 (en) * 2019-11-08 2023-04-11 Skyworks Solutions, Inc. Out-of-band rejection using SAW-based integrated balun
WO2022024807A1 (ja) * 2020-07-31 2022-02-03 株式会社村田製作所 弾性波フィルタおよびマルチプレクサ
US12294351B2 (en) 2021-12-22 2025-05-06 Skyworks Solutions, Inc. Acoustic wave device with mini bus bars
CN115664456B (zh) * 2022-12-08 2023-05-02 荣耀终端有限公司 一种射频传输电路及电子设备

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JPS63153902A (ja) * 1986-09-19 1988-06-27 Nec Corp 低雑音増幅器
JPH077451A (ja) * 1993-06-15 1995-01-10 Hitachi Ltd 受信回路
JP3454239B2 (ja) * 2000-08-31 2003-10-06 株式会社村田製作所 弾性表面波フィルタ
KR100757915B1 (ko) * 2000-11-01 2007-09-11 히타치 긴조쿠 가부시키가이샤 고주파 스위치모듈
JP3973915B2 (ja) * 2001-03-30 2007-09-12 株式会社日立メディアエレクトロニクス 高周波フィルタ、高周波回路、アンテナ共用器及び無線端末
DE60300311T2 (de) * 2002-03-15 2005-06-23 Matsushita Electric Industrial Co., Ltd., Kadoma Symmetrische Hochfrequenzvorrichtung mit einem Oberflächenwellenfilter.
WO2004038913A1 (ja) * 2002-10-25 2004-05-06 Hitachi Metals, Ltd. 平衡−不平衡型マルチバンドフィルタモジュール
CN101128977A (zh) * 2005-02-28 2008-02-20 松下电器产业株式会社 压电滤波器以及使用该压电滤波器的双工器和通信装置
EP1854211A1 (en) 2005-02-28 2007-11-14 Matsushita Electric Industrial Co., Ltd. Piezoelectric filter, and duplexer and communications apparatus using the same
JP2006333390A (ja) * 2005-05-30 2006-12-07 Furukawa Electric Co Ltd:The 低雑音増幅回路
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JP2009060511A (ja) 2007-09-03 2009-03-19 Murata Mfg Co Ltd 通信装置
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US9455755B2 (en) 2014-10-06 2016-09-27 Skyworks Solutions, Inc. Aggregate signal amplification device and method

Also Published As

Publication number Publication date
JP2018023074A (ja) 2018-02-08
US10673410B2 (en) 2020-06-02
KR20180016298A (ko) 2018-02-14
US20180041192A1 (en) 2018-02-08
KR101944625B1 (ko) 2019-01-31
CN107689783A (zh) 2018-02-13
CN107689783B (zh) 2020-12-15

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