CN107689783B - 高频模块以及弹性波滤波器的制造方法 - Google Patents
高频模块以及弹性波滤波器的制造方法 Download PDFInfo
- Publication number
- CN107689783B CN107689783B CN201710604182.7A CN201710604182A CN107689783B CN 107689783 B CN107689783 B CN 107689783B CN 201710604182 A CN201710604182 A CN 201710604182A CN 107689783 B CN107689783 B CN 107689783B
- Authority
- CN
- China
- Prior art keywords
- elastic wave
- wave filter
- impedance
- gain
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 15
- 230000008569 process Effects 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 19
- 230000006866 deterioration Effects 0.000 abstract description 18
- 238000004804 winding Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 16
- 238000013461 design Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 239000011241 protective layer Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011960 computer-aided design Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
- H03H9/52—Electric coupling means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/0004—Impedance-matching networks
- H03H9/0009—Impedance-matching networks using surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6436—Coupled resonator filters having one acoustic track only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-155024 | 2016-08-05 | ||
| JP2016155024A JP6520857B2 (ja) | 2016-08-05 | 2016-08-05 | 高周波モジュール及び弾性波フィルタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107689783A CN107689783A (zh) | 2018-02-13 |
| CN107689783B true CN107689783B (zh) | 2020-12-15 |
Family
ID=61070074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710604182.7A Active CN107689783B (zh) | 2016-08-05 | 2017-07-21 | 高频模块以及弹性波滤波器的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10673410B2 (enExample) |
| JP (1) | JP6520857B2 (enExample) |
| KR (1) | KR101944625B1 (enExample) |
| CN (1) | CN107689783B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10320363B2 (en) * | 2016-08-05 | 2019-06-11 | Murata Manufacturing Co., Ltd. | High-frequency module |
| US11870421B2 (en) * | 2019-10-23 | 2024-01-09 | Skyworks Solutions, Inc. | Surface acoustic wave resonator with suppressed transverse modes using second bus bar |
| US11626855B2 (en) * | 2019-11-08 | 2023-04-11 | Skyworks Solutions, Inc. | Out-of-band rejection using SAW-based integrated balun |
| WO2022024807A1 (ja) * | 2020-07-31 | 2022-02-03 | 株式会社村田製作所 | 弾性波フィルタおよびマルチプレクサ |
| US12294351B2 (en) | 2021-12-22 | 2025-05-06 | Skyworks Solutions, Inc. | Acoustic wave device with mini bus bars |
| CN115664456B (zh) * | 2022-12-08 | 2023-05-02 | 荣耀终端有限公司 | 一种射频传输电路及电子设备 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077451A (ja) * | 1993-06-15 | 1995-01-10 | Hitachi Ltd | 受信回路 |
| EP1246358A2 (en) * | 2001-03-30 | 2002-10-02 | Hitachi Media Electronics Co., Ltd. | Radio frequency filter, radio frequency circuit, antenna duplexer and radio terminal |
| CN1394391A (zh) * | 2000-11-01 | 2003-01-29 | 日立金属株式会社 | 高频开关模块 |
| CN1445926A (zh) * | 2002-03-15 | 2003-10-01 | 松下电器产业株式会社 | 平衡高频器件,平衡特性的改进方法和采用此类器件的平衡高频电路 |
| CN1708899A (zh) * | 2002-10-25 | 2005-12-14 | 日立金属株式会社 | 平衡-不平衡型多频带滤波模块 |
| CN101128977A (zh) * | 2005-02-28 | 2008-02-20 | 松下电器产业株式会社 | 压电滤波器以及使用该压电滤波器的双工器和通信装置 |
| CN103001687A (zh) * | 2012-12-21 | 2013-03-27 | 北京工业大学 | 一种用于接收gsm-r信号的接收装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63153902A (ja) * | 1986-09-19 | 1988-06-27 | Nec Corp | 低雑音増幅器 |
| JP3454239B2 (ja) * | 2000-08-31 | 2003-10-06 | 株式会社村田製作所 | 弾性表面波フィルタ |
| EP1854211A1 (en) | 2005-02-28 | 2007-11-14 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric filter, and duplexer and communications apparatus using the same |
| JP2006333390A (ja) * | 2005-05-30 | 2006-12-07 | Furukawa Electric Co Ltd:The | 低雑音増幅回路 |
| KR101048337B1 (ko) | 2006-12-21 | 2011-07-14 | 가부시키가이샤 무라타 세이사쿠쇼 | 고주파 스위칭 회로 |
| JP2009060511A (ja) | 2007-09-03 | 2009-03-19 | Murata Mfg Co Ltd | 通信装置 |
| JP4816710B2 (ja) * | 2008-10-30 | 2011-11-16 | 株式会社村田製作所 | 分波器 |
| JP5001980B2 (ja) * | 2009-06-18 | 2012-08-15 | サイトウ共聴特殊機器株式会社 | 地上波デジタルテレビ用アンテナブースタユニット |
| WO2012114593A1 (ja) * | 2011-02-24 | 2012-08-30 | 株式会社村田製作所 | 弾性波分波器 |
| JP6017868B2 (ja) * | 2011-11-04 | 2016-11-02 | 太陽誘電株式会社 | 分波器、フィルタ及び通信モジュール |
| US20140015614A1 (en) * | 2012-07-10 | 2014-01-16 | Infineon Technologies Ag | System and Method for a Low Noise Amplifier |
| JP5765501B1 (ja) | 2013-09-17 | 2015-08-19 | 株式会社村田製作所 | デュプレクサ |
| CN106165305B (zh) | 2014-02-19 | 2019-04-19 | 株式会社村田制作所 | 高频前端电路 |
| US9455755B2 (en) | 2014-10-06 | 2016-09-27 | Skyworks Solutions, Inc. | Aggregate signal amplification device and method |
-
2016
- 2016-08-05 JP JP2016155024A patent/JP6520857B2/ja active Active
-
2017
- 2017-07-14 US US15/649,677 patent/US10673410B2/en active Active
- 2017-07-21 CN CN201710604182.7A patent/CN107689783B/zh active Active
- 2017-08-02 KR KR1020170098201A patent/KR101944625B1/ko active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077451A (ja) * | 1993-06-15 | 1995-01-10 | Hitachi Ltd | 受信回路 |
| CN1394391A (zh) * | 2000-11-01 | 2003-01-29 | 日立金属株式会社 | 高频开关模块 |
| EP1246358A2 (en) * | 2001-03-30 | 2002-10-02 | Hitachi Media Electronics Co., Ltd. | Radio frequency filter, radio frequency circuit, antenna duplexer and radio terminal |
| CN1445926A (zh) * | 2002-03-15 | 2003-10-01 | 松下电器产业株式会社 | 平衡高频器件,平衡特性的改进方法和采用此类器件的平衡高频电路 |
| CN1708899A (zh) * | 2002-10-25 | 2005-12-14 | 日立金属株式会社 | 平衡-不平衡型多频带滤波模块 |
| CN101128977A (zh) * | 2005-02-28 | 2008-02-20 | 松下电器产业株式会社 | 压电滤波器以及使用该压电滤波器的双工器和通信装置 |
| CN103001687A (zh) * | 2012-12-21 | 2013-03-27 | 北京工业大学 | 一种用于接收gsm-r信号的接收装置 |
Non-Patent Citations (1)
| Title |
|---|
| "低损耗、高Q值声表面波谐振器和低相位噪声SAW振荡器";周卫;《中国优秀硕士学位论文全文数据库(电子期刊)》;20061231;I135-344 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018023074A (ja) | 2018-02-08 |
| US10673410B2 (en) | 2020-06-02 |
| KR20180016298A (ko) | 2018-02-14 |
| US20180041192A1 (en) | 2018-02-08 |
| KR101944625B1 (ko) | 2019-01-31 |
| CN107689783A (zh) | 2018-02-13 |
| JP6520857B2 (ja) | 2019-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107689783B (zh) | 高频模块以及弹性波滤波器的制造方法 | |
| US10615775B2 (en) | Multiplexer, transmission apparatus, and reception apparatus | |
| US8773221B2 (en) | Band rejection filter | |
| US8179207B2 (en) | Resonator device, filter including the same, and duplexer | |
| US10715110B2 (en) | Acoustic wave filter device, multiplexer, RF front-end circuit, and communication apparatus | |
| US9979379B2 (en) | Multiplexer, radio frequency front-end circuit, communication device, and multiplexer design method | |
| CN111448759A (zh) | 多工器、高频前端电路及通信装置 | |
| US10944381B2 (en) | Acoustic wave filter device, multiplexer, radio-frequency front end circuit, and communication device | |
| US11038488B2 (en) | Multiplexer | |
| US10651821B2 (en) | Multiplexer, high-frequency front-end circuit, and communication apparatus | |
| WO2018051846A1 (ja) | 弾性波フィルタ装置、マルチプレクサ、高周波フロントエンド回路及び通信装置 | |
| US10958241B2 (en) | Extractor | |
| US10491181B2 (en) | High-frequency filter and high-frequency module | |
| WO2018097203A1 (ja) | 弾性波フィルタ装置、マルチプレクサ、高周波フロントエンド回路および通信装置 | |
| KR20190076048A (ko) | 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치 | |
| CN113056874B (zh) | 提取器 | |
| CN211830723U (zh) | 弹性波滤波器装置以及复合滤波器装置 | |
| JPWO2006040923A1 (ja) | 分波器 | |
| CN110476355B (zh) | 多工器、高频前端电路以及通信装置 | |
| US10763824B2 (en) | High-frequency filter and multiplexer | |
| CN112204881B (zh) | 多工器 | |
| CN116783829A (zh) | 滤波器装置、高频模块以及通信装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |