JP6511105B2 - 切割方法、その切割方法に使用する超音波ワイヤ切割装置及びウェハー製造方法 - Google Patents
切割方法、その切割方法に使用する超音波ワイヤ切割装置及びウェハー製造方法 Download PDFInfo
- Publication number
- JP6511105B2 JP6511105B2 JP2017166567A JP2017166567A JP6511105B2 JP 6511105 B2 JP6511105 B2 JP 6511105B2 JP 2017166567 A JP2017166567 A JP 2017166567A JP 2017166567 A JP2017166567 A JP 2017166567A JP 6511105 B2 JP6511105 B2 JP 6511105B2
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- liquid
- wire
- cut
- ultrasonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005520 cutting process Methods 0.000 title claims description 268
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000007788 liquid Substances 0.000 claims description 187
- 238000003860 storage Methods 0.000 claims description 63
- 235000012431 wafers Nutrition 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 230000004308 accommodation Effects 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105129735 | 2016-09-13 | ||
TW105129735A TWI641461B (zh) | 2016-09-13 | 2016-09-13 | Ultrasonic auxiliary wire cutting cutting method and device thereof, and wafer manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018043341A JP2018043341A (ja) | 2018-03-22 |
JP6511105B2 true JP6511105B2 (ja) | 2019-05-15 |
Family
ID=59811151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017166567A Active JP6511105B2 (ja) | 2016-09-13 | 2017-08-31 | 切割方法、その切割方法に使用する超音波ワイヤ切割装置及びウェハー製造方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3292968A1 (zh) |
JP (1) | JP6511105B2 (zh) |
CN (1) | CN107813434A (zh) |
TW (1) | TWI641461B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114589601B (zh) * | 2022-03-18 | 2023-09-05 | 浙江晶盛机电股份有限公司 | 磨粒赋能线切割装置及方法 |
CN114851413A (zh) * | 2022-03-25 | 2022-08-05 | 河南科技大学 | 一种接片槽、金刚线切片机及大尺寸硅棒的切割方法 |
CN115609770A (zh) * | 2022-10-11 | 2023-01-17 | 上海理工大学 | 一种超声空化辅助线锯切割加工装置及方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01216759A (ja) * | 1988-02-24 | 1989-08-30 | Osaka Titanium Co Ltd | スライス加工法および装置 |
JPH03111104A (ja) * | 1989-04-21 | 1991-05-10 | M Setetsuku Kk | インゴットの切断方法 |
JP3534213B2 (ja) * | 1995-09-30 | 2004-06-07 | コマツ電子金属株式会社 | 半導体ウェハの製造方法 |
JP2000308955A (ja) * | 1999-04-26 | 2000-11-07 | Super Silicon Kenkyusho:Kk | ワイヤソーを用いたスライシング用スラリー |
JP5430294B2 (ja) * | 2009-01-29 | 2014-02-26 | 京セラ株式会社 | 基板の製造方法 |
GB2468874A (en) * | 2009-03-24 | 2010-09-29 | Rec Wafer Norway As | Apparatus for cutting wafers using wires and abrasive slurry |
CN102101324A (zh) * | 2009-12-17 | 2011-06-22 | 绿能科技股份有限公司 | 硅晶锭的超音波切割设备 |
CN102922610B (zh) * | 2011-08-10 | 2016-01-27 | 浙江昱辉阳光能源有限公司 | 一种金刚线多线切割方法、设备和系统 |
CN103085179A (zh) * | 2011-11-06 | 2013-05-08 | 赵钧永 | 超声波线切割方法及专用设备 |
TWI499480B (zh) * | 2012-09-10 | 2015-09-11 | Auo Crystal Corp | 晶錠切削冷卻裝置及其冷卻方法 |
CN202964937U (zh) * | 2012-12-11 | 2013-06-05 | 江苏协鑫硅材料科技发展有限公司 | 一种切割硅锭的装置 |
CN104009116A (zh) * | 2014-05-12 | 2014-08-27 | 奥特斯维能源(太仓)有限公司 | 金刚线切割多晶硅片的电池的制作方法 |
JP2016101611A (ja) * | 2014-11-27 | 2016-06-02 | 京セラ株式会社 | 基板の製造方法 |
CN105619628B (zh) * | 2016-02-18 | 2017-11-17 | 安徽旭能电力股份有限公司 | 一种双面玻璃晶体硅片加工切割装置 |
-
2016
- 2016-09-13 TW TW105129735A patent/TWI641461B/zh active
-
2017
- 2017-08-31 JP JP2017166567A patent/JP6511105B2/ja active Active
- 2017-09-05 CN CN201710790107.4A patent/CN107813434A/zh active Pending
- 2017-09-07 EP EP17189752.3A patent/EP3292968A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW201808563A (zh) | 2018-03-16 |
JP2018043341A (ja) | 2018-03-22 |
TWI641461B (zh) | 2018-11-21 |
EP3292968A1 (en) | 2018-03-14 |
CN107813434A (zh) | 2018-03-20 |
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