EP3292968A1 - Wire saw apparatus, a method of sawing an object, and a method of producing etched wafers - Google Patents
Wire saw apparatus, a method of sawing an object, and a method of producing etched wafers Download PDFInfo
- Publication number
- EP3292968A1 EP3292968A1 EP17189752.3A EP17189752A EP3292968A1 EP 3292968 A1 EP3292968 A1 EP 3292968A1 EP 17189752 A EP17189752 A EP 17189752A EP 3292968 A1 EP3292968 A1 EP 3292968A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- sawing
- sawing wires
- cutting liquid
- wires
- wire saw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
Definitions
- the disclosure relates to a wire saw apparatus, a method of sawing an object, and a method of producing a plurality of etched wafers.
- FIGS. 1 and 2 Chinese Patent Application Publication No. CN 103085179 A discloses a conventional wire saw apparatus 1, and a method of sawing an ingot 100 using the wire saw apparatus 1 .
- the wire saw apparatus 1 includes a tank 12 that receives a cutting liquid 11 (i.e., slurry), an ultrasonic vibrating plate 13 that is received in the tank 12, two guiding rollers 14 that are respectively located at opposites sides of the tank 12, and a plurality of sawing wires 15 (only one is shown in FIGS. 1 and 2 ) that are wound on the guiding rollers 14 and that define a sawing section 151 for cutting the ingot 100, which is located directly above the sawing section 151 of the sawing wires 15.
- a cutting liquid 11 i.e., slurry
- an ultrasonic vibrating plate 13 that is received in the tank 12
- two guiding rollers 14 that are respectively located at opposites sides of the tank 12
- a plurality of sawing wires 15 (only one is shown in FIGS
- the sawingwires 15 are driven by the guiding rollers 14 to reciprocate between the guiding rollers 14, and the ingot 100 is moved toward the sawing section 151 of the sawing wires 15.
- the sawing section 151 is deformed by the ingot 100 to be immerged into the cutting liquid 11 and cuts the ingot 100, in which an ultrasonic wave generated by the ultrasonic vibrating plate 13 is transmitted into the sawing section 151 of the sawing wires 15 through the cutting liquid 11, such that the sawing section 151 is vibrated by the ultrasonic wave to increase cutting precision.
- the immersion of the sawing section 151 of the sawing wires 15 in the cutting liquid 11 may impede reciprocating movement of the sawing section 151 and may cause wobbling of the sawing wires 15 or even break the sawing wires 15.
- an object of the present disclosure is to provide a wire saw apparatus, a method of sawing an obj ect, and a method of producing etched wafers.
- a method of sawing an object includes:
- a wire saw apparatus includes a tank, an ultrasonic vibrator, a plurality of sawing wires, and a control device.
- the tank has a receiving space that has an opening and that is adapted to receive a cutting liquid.
- the ultrasonic vibrator is disposed on the tank.
- the sawing wires are located above the opening of the receiving space.
- the control device is operable for reciprocating the sawing wires. When moved toward the cutting liquid into contact with the sawing wires, the object is cut by the sawing wires to form a plurality of cut grooves respectively corresponding to the sawing wires. When a part of the object is immerged into the cutting liquid so that lower end openings of the cut grooves of the object are located in the cutting liquid, the cutting liquid enters the cut grooves of the object by capillary action, and at least a part of the sawing wires is not in contact with the cutting liquid.
- a method of producing a plurality of etched wafers includes:
- an ultrasonic-assisted wire saw apparatus is adapted for use with a plurality of sawing wires to cut an object.
- the ultrasonic-assisted wire saw apparatus includes a tank, and an ultrasonic vibrator.
- the tank has a receiving space that has an opening and that is adapted to receive a cutting liquid.
- the sawing wires cooperate to constitute a sawing net located above the opening of the receiving space.
- the ultrasonic vibrator is disposed in the receiving space and is adapted to generate an ultrasonic wave. When the object is cut by the sawing net of the sawing wires to form a plurality of cut grooves, the ultrasonic wave is transmitted into the sawing wires through the cutting liquid entering the cut grooves by capillary action.
- FIGS. 3 to 5 an embodiment of a method of sawing an object 700, and a wire saw apparatus 2 used by the method are described in details as following.
- the method includes a preparing step 301 and a cutting step 302 .
- the wire saw apparatus 2 is provided, which includes a tank 20, an ultrasonic vibrator 3 disposed in the tank 20, two control devices 5 respectively located at opposite sides of the tank 20, and a plurality of sawing wires 4 connected to the control devices 5 and located directly above the opening 211 of the receiving space 21.
- the tank 20 defines a receiving space 21 having an opening 211 disposed at upper end thereof, and adapted for receiving a cutting liquid 200 therein.
- the ultrasonic vibrator 3 is disposed at a bottom side of the tank 20 and has a center aligned vertically with that of the opening 211 .
- each of the control devices 5 is a driving roller.
- each of the control devices 5 may include a driving roller, and a driven roller that has a diameter smaller than that of the main roller and that is driven by the driving roller. It should be noted that the structure and arrangement of the control devices 5 may be changed according to practical requirements as long as the sawing wires 4 can be driven by the control devices 5 to reciprocate in the reciprocating direction (X).
- Each of the sawing wires 4 has a radial width (R) such that, further referring to FIG. 10 , the object 700 can be cut by the sawing wires 4 to form a plurality of cut grooves 400 each having a horizontal width (W) that is substantially equal to the radial width (R) of each of the sawing wires 4, and that is small enough to allow the cutting liquid 200 to enter the cut grooves 400 by capillary action when a part of the object 700 is immerged into the cutting liquid 200.
- the radial width (R) of each of the sawing wires 4 is not greater than 300 ⁇ m.
- the radial width (R) of each of the sawing wires 4 ranges from 40 ⁇ m to 150 ⁇ m.
- the cutting liquid 200 may be made from water, oil, alcohol, heavy liquid, etc.
- FIGS. 6 and 7 show an alternative structure of the ultrasonic vibrator 3 that includes a plurality of transducers 31 that are arranged in two groups respectively located at opposite sides of the tank 20.
- the transducers 31 of each group are arranged along a direction (Y) along which the sawing wires 4 are arranged. Noted that the sawing wires 4 are omitted in FIG. 7 to clearly show the arrangement of the transducers 31.
- each of the transducers 31 is an ultrasonic transducer.
- FIG. 8 shows another alternative structure of the ultrasonic vibrator 3 that includes a first transducer 31' and a second transducer 31".
- the first and second transducers 31', 31" maybe disposed in the tank 20 adjacent to each other, and the second transducer 31" generates an ultrasonic wave having an energy different from (e.g., greater than) that of an ultrasonic wave generated by the first transducer 31'.
- Such arrangement may be beneficial for removing cutting dusts of different size.
- the sawing wires 4 are omitted in FIG. 8 to clearly show the arrangement of the first and second transducers 31', 31''.
- the second transducer 31" has a vibration frequency different from (e.g., greater than) that of the first transducer 31' .
- Such arrangement may be beneficial for removing cutting dusts of different size.
- transducers 31, 31', 31" may be changed according to practical requirements.
- the wire saw apparatus 2 is used for cutting the object 700 mounted to a holder 6.
- the object 700 may be a semiconductor ingot, a metal or an alloy ingot, or a ceramic block.
- the ultrasonic vibrator 3 is driven to operate, and the control devices 5 are driven to drive reciprocating movement of the sawing wires 4, and the object 700 located directly above the sawing wires 4 is moved toward the sawing wires 4, so that the object 700 is cut by the sawing wires 4 to form the cut grooves 400 located at a lower end thereof and respectively corresponding to the sawing wires 4 in position along a vertical direction (V).
- V vertical direction
- a part of the object 700 is immerged into the cutting liquid 200 such that lower end openings 401 of the cut grooves 400 of the object 700 are located in the cutting liquid 200.
- a liquid level 201 of the cutting liquid 200 and the sawing wires 4 are separated by a spacing (H) .
- the sawing wires 4 are slightly deformed by the object 700, but are kept away from the cutting liquid 200.
- the sawing wires 4 are diamond wire saws. After long-term use, the diamond particles on the diamond wire saws may fall off or be worn out. Therefore, greater force should be exerted on the sawing wires 4 when cutting, resulting in more deformation of the sawing wires 4, and a part of the sawing wires 4 may be immersed into the cutting liquid 200.
- the spacing (H) by controlling the spacing (H), at least a part of the sawing wires 4 is always not in contact with the cutting liquid 200, thereby alleviating the wobbling or breakage issues associated with the conventional wire saw apparatus 1 (see FIGS. 1 and 2 ) caused by immersion of the sawing section 151 (see FIGS. 1 and 2 ) of the sawing wires 15 (see FIGS. 1 and 2 ) in the cutting liquid 11.
- the object 700 is cut into a plurality of wafers 800 by the sawing wires 4.
- an ultrasonic wave generated by the ultrasonic vibrator 3 is transmitted into the sawing wires 4 through the cutting liquid 200 in the cut grooves 400 and the object 700, causing high frequency vibration of the sawing wires 4 and the object 700, resulting in better cutting efficiency and precision.
- cavitation effect caused by the ultrasonic wave may occur in the cutting liquid 200 in the cut grooves 400.
- the bubbles formed in the cutting liquid 200 in the cut grooves 400 may facilitate removal of cutting dust and cleaning of the cut grooves 400 of the object 700 and the sawing wires 4.
- the holder 6 and the wafers 800 are moved away from the sawing wires 4, so that the wafers 800 may be cleaned further by the sawing wires 4.
- the transducers 31 of the ultrasonic vibrator 3 may generate ultrasonic waves of different frequencies to accommodate different applications.
- the spacing (H) between the liquid level 201 of the cutting fluid 200 and the sawing wires 4 is too large, the intensity of the ultrasonic wave transmitted to the sawing wires 4 is lowered. Therefore, the spacing (H) should be controlled based on practical requirements .
- the object 700 is an eight-inch ingot, and the spacing (H) is not greater than 200 mm.
- the spacing (H) ranges from 20 mm to 160 mm. In certain embodiments, the spacing (H) ranges from 10 mm to 60 mm.
- the tank 20 may be formed with liquid inlet and outlet (not shown) allowing for control of the liquid level 201 of the cutting liquid 200, thereby controlling the spacing (H).
- the wafers 800 may be subjected to etching so as to be formed into a plurality of etched wafers 800', which have roughened surfaces for subsequent applications.
- FIGS. 16, 17 , 20 and 21 show cut surfaces of the wafers made by the method according to the present disclosure.
- FIGS. 14, 15 , 18 and 19 show cut surfaces of wafers 900 of a comparative example, in which the wafers were made without using an ultrasonic vibrator.
- each of the cut grooves 400 is defined between two opposite side wall surfaces, each of which may has a rich-side region and a poor-side region.
- the formation of rich-side region is caused by more contact with a corresponding sawing wire 4, and the rich-side region therefore has more cut marks.
- the formation of the poor-side region is the result of less contact with the corresponding sawing wire 4, and the poor-side region therefore has less cut marks.
- FIGS. 14 and 15 respectively show optical microscope images of the rich-side region and the poor-side region of one of the wafers 900 of the comparative example .
- FIGS. 16 and 17 respectively show optical microscope images of the rich-side region and the poor-side region of one of the wafers 800 of this disclosure.
- FIGS. 18 and 19 respectively show optical microscope images of the rich-side region and the poor-side region of one of an etched wafers 900' of the comparative example.
- FIGS. 20 and 21 respectively show optical microscope images of the rich-side region and the poor-side region of one of the etched wafers 800' of this disclosure.
- the use of the ultrasonic vibrator 3 results in more evenly distributed brittle structures, which are beneficial for subsequent device applications.
- the capillary action to allow the cutting liquid 200 to flow into the cut grooves 400 of the object 700 and by controlling the spacing (H) between the liquid level 201 of the cutting liquid 200 and the sawing wires 4, at least a part of the sawing wires 4 is controlled to be not immerged into the cutting liquid 200 during cutting, thereby alleviating the wire wobbling or breakage issues associated with the conventional wire saw apparatus 1.
- the ultrasonic wave generated by the ultrasonic vibrator 3 may be transmitted into the sawing wires 4 through the cutting liquid 200 in the cut grooves 400 and the object 700, thereby achieving better cutting efficiency and precision.
- the cavitation effect occurs in the cutting liquid 200 in the cut grooves 400 is beneficial for removal of cutting dust and cleaning of the cut grooves 400 of the object 700 and the sawing wires 4.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105129735A TWI641461B (zh) | 2016-09-13 | 2016-09-13 | Ultrasonic auxiliary wire cutting cutting method and device thereof, and wafer manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3292968A1 true EP3292968A1 (en) | 2018-03-14 |
Family
ID=59811151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17189752.3A Withdrawn EP3292968A1 (en) | 2016-09-13 | 2017-09-07 | Wire saw apparatus, a method of sawing an object, and a method of producing etched wafers |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3292968A1 (zh) |
JP (1) | JP6511105B2 (zh) |
CN (1) | CN107813434A (zh) |
TW (1) | TWI641461B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114851413A (zh) * | 2022-03-25 | 2022-08-05 | 河南科技大学 | 一种接片槽、金刚线切片机及大尺寸硅棒的切割方法 |
CN115609770A (zh) * | 2022-10-11 | 2023-01-17 | 上海理工大学 | 一种超声空化辅助线锯切割加工装置及方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114589601B (zh) * | 2022-03-18 | 2023-09-05 | 浙江晶盛机电股份有限公司 | 磨粒赋能线切割装置及方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01216759A (ja) * | 1988-02-24 | 1989-08-30 | Osaka Titanium Co Ltd | スライス加工法および装置 |
JP2010194706A (ja) * | 2009-01-29 | 2010-09-09 | Kyocera Corp | 基板の製造方法 |
CN103085179A (zh) | 2011-11-06 | 2013-05-08 | 赵钧永 | 超声波线切割方法及专用设备 |
TW201410385A (zh) * | 2012-09-10 | 2014-03-16 | Auo Crystal Corp | 晶錠切削冷卻裝置及其冷卻方法 |
JP2016101611A (ja) * | 2014-11-27 | 2016-06-02 | 京セラ株式会社 | 基板の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03111104A (ja) * | 1989-04-21 | 1991-05-10 | M Setetsuku Kk | インゴットの切断方法 |
JP3534213B2 (ja) * | 1995-09-30 | 2004-06-07 | コマツ電子金属株式会社 | 半導体ウェハの製造方法 |
JP2000308955A (ja) * | 1999-04-26 | 2000-11-07 | Super Silicon Kenkyusho:Kk | ワイヤソーを用いたスライシング用スラリー |
GB2468874A (en) * | 2009-03-24 | 2010-09-29 | Rec Wafer Norway As | Apparatus for cutting wafers using wires and abrasive slurry |
CN102101324A (zh) * | 2009-12-17 | 2011-06-22 | 绿能科技股份有限公司 | 硅晶锭的超音波切割设备 |
CN102922610B (zh) * | 2011-08-10 | 2016-01-27 | 浙江昱辉阳光能源有限公司 | 一种金刚线多线切割方法、设备和系统 |
CN202964937U (zh) * | 2012-12-11 | 2013-06-05 | 江苏协鑫硅材料科技发展有限公司 | 一种切割硅锭的装置 |
CN104009116A (zh) * | 2014-05-12 | 2014-08-27 | 奥特斯维能源(太仓)有限公司 | 金刚线切割多晶硅片的电池的制作方法 |
CN105619628B (zh) * | 2016-02-18 | 2017-11-17 | 安徽旭能电力股份有限公司 | 一种双面玻璃晶体硅片加工切割装置 |
-
2016
- 2016-09-13 TW TW105129735A patent/TWI641461B/zh active
-
2017
- 2017-08-31 JP JP2017166567A patent/JP6511105B2/ja active Active
- 2017-09-05 CN CN201710790107.4A patent/CN107813434A/zh active Pending
- 2017-09-07 EP EP17189752.3A patent/EP3292968A1/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01216759A (ja) * | 1988-02-24 | 1989-08-30 | Osaka Titanium Co Ltd | スライス加工法および装置 |
JP2010194706A (ja) * | 2009-01-29 | 2010-09-09 | Kyocera Corp | 基板の製造方法 |
CN103085179A (zh) | 2011-11-06 | 2013-05-08 | 赵钧永 | 超声波线切割方法及专用设备 |
TW201410385A (zh) * | 2012-09-10 | 2014-03-16 | Auo Crystal Corp | 晶錠切削冷卻裝置及其冷卻方法 |
JP2016101611A (ja) * | 2014-11-27 | 2016-06-02 | 京セラ株式会社 | 基板の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114851413A (zh) * | 2022-03-25 | 2022-08-05 | 河南科技大学 | 一种接片槽、金刚线切片机及大尺寸硅棒的切割方法 |
CN115609770A (zh) * | 2022-10-11 | 2023-01-17 | 上海理工大学 | 一种超声空化辅助线锯切割加工装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107813434A (zh) | 2018-03-20 |
TWI641461B (zh) | 2018-11-21 |
JP2018043341A (ja) | 2018-03-22 |
TW201808563A (zh) | 2018-03-16 |
JP6511105B2 (ja) | 2019-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3292968A1 (en) | Wire saw apparatus, a method of sawing an object, and a method of producing etched wafers | |
RU2390391C2 (ru) | Устройство и способ очистки объектов, в частности тонких дисков | |
US10828726B2 (en) | SiC wafer producing method using ultrasonic wave | |
KR100350657B1 (ko) | 경질의 취성가공물에서 다수의 디스크를 절삭하는 방법 및 그 장치 | |
US10507637B2 (en) | Peeling apparatus | |
US9108232B2 (en) | Megasonic multifrequency apparatus with matched transducers and mounting plate | |
RU2005112562A (ru) | Способы и системы микрообработки | |
CN1534762A (zh) | 制造半导体器件的方法 | |
JP2022180703A (ja) | 剥離方法及び剥離装置 | |
JP5430294B2 (ja) | 基板の製造方法 | |
KR20190089730A (ko) | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 | |
US20110053466A1 (en) | Glass substrate spacer separating system and glass substrate fabricating method | |
JP3775044B2 (ja) | ワイヤソー加工方法およびワイヤソー加工装置 | |
KR101177038B1 (ko) | 물품의 세정 장치 및 방법 | |
JP2009206291A (ja) | 半導体基板、半導体装置、およびその製造方法 | |
JP4349369B2 (ja) | ワイヤソー加工方法 | |
CN110773505B (zh) | 一种硅片清洗装置及方法 | |
CN1723547A (zh) | 制造单晶半导体晶片的方法及实施该方法的激光加工设备 | |
KR20150092200A (ko) | 웨이퍼 세척 장치 및 방법들 | |
KR102712922B1 (ko) | 웨이퍼 세정 장치 및 그 세정 방법 | |
JP2008213103A (ja) | ワイヤソーの加工液供給装置 | |
JP2016155197A (ja) | ワイヤーソー及び切断方法 | |
JP2006181688A (ja) | 超砥粒ワイヤソーによる切断方法および超砥粒ワイヤソー切断装置 | |
CN106298991A (zh) | 硅片及其制备方法及装置 | |
WO2009098042A1 (en) | Device for cleaning flat substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20180831 |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20191016 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20200227 |