JP6507173B2 - 集積超伝導体デバイス及びその製造方法 - Google Patents
集積超伝導体デバイス及びその製造方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/30—Drying; Impregnating
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/023—Current limitation using superconducting elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
Claims (11)
- ガラスで形成した基板ベースと、
前記基板ベース上に配置し、結晶方位を有する第1中間層であって、窒化ケイ素の層と、該窒化ケイ素の層上に配置した第1MgO層と、該第1MgO層上に配置した分離第2MgO層と、を備え、該第2MgO層は前記第1MgO層に対してよりも高度な結晶方位を有する、第1中間層と、
前記第1中間層上に配置した第1配向性超伝導体層と、
前記第1配向性超伝導体層の一部の上に配置した第1導電細条であって、前記第1導電細条の下側に前記第1配向性超伝導体層の第1超伝導体領域、及び前記第1超伝導体領域に隣接する前記第1配向性超伝導体層の第1露出領域を画定する、該第1導電細条と、
を備え、
前記第1導電細条は蛇行パターンを有する、集積超伝導体デバイス。 - 前記第1配向性超伝導体層の前記第1露出領域は、非超伝導体の不完全超伝導体材料を有する、請求項1記載の集積超伝導体デバイス。
- さらに、前記第1導電細条及び前記第1露出領域上に配置した保護コーティングを備える、請求項1記載の集積超伝導体デバイス。
- 前記基板ベースは第1側面及び第2側面を有し、前記第1導電細条を前記第1側面に配置する請求項1記載の集積超伝導体デバイスにおいて、前記集積超伝導体デバイスは、さらに、
前記第2側面における基板ベース上に配置した第2中間層であって、結晶方位を有する、該第2中間層と、
前記第2中間層上に配置した第2配向性超伝導体層と、
前記第2配向性超伝導体層の一部の上に配置した第2導電細条であって、前記第2導電細条の下側における前記第2配向性超伝導体層の第2超伝導体領域、及び保護領域に隣接する前記第2配向性超伝導体層の第2露出領域を画定し、前記第1導電細条に電気的に接続する、該第2導電細条と、
を備える、集積超伝導体デバイス。 - 前記第1及び第2の導電細条はバイファイラ巻線構造を有する、請求項4記載の集積超伝導体デバイス。
- 前記第1及び第2の導電細条は相互にバイファイラ巻線にする、請求項5記載の集積超伝導体デバイス。
- 基板ベース上に結晶方位を有する結晶質層を堆積するステップであって、前記結晶質層は、窒化ケイ素の層と、該窒化ケイ素の層上に配置した第1MgO層と、該第1MgO層上に配置した分離第2MgO層と、を備え、該第2MgO層は前記第1MgO層に対してよりも高度な結晶方位を有する、ステップと、
配向性超伝導体材料を有する第1配向性超伝導体層を前記結晶質層上に形成するステップと、
非線形パターンを有する第1導電細条を堆積するステップと、
前記第1配向性超伝導体層における前記第1導電細条によってカバーされない第1露出領域を処理して、前記第1露出領域を非超伝導体材料に転換するステップと、
前記第1導電細条を蛇行パターンにして設けるステップと、
を備える、集積超伝導体デバイスを形成する方法。 - さらに、前記基板ベースをアニーリングして、前記第1露出領域に非超伝導体材料を形成するステップを備える、請求項7記載の方法。
- さらに、前記第1導電細条及び前記第1露出領域上に保護コーティングを堆積するステップを備える、請求項7記載の方法。
- 前記基板ベースは第1側面及び第2側面を有し、前記第1導電細条を前記第1側面に堆積する請求項7記載の方法において、前記方法は、さらに、
前記第2側面における基板ベース上に第2中間層を堆積するステップであって、結晶方位を有する前記第2中間層を堆積するステップと、
前記第2中間層上に第2配向性超伝導体層を堆積するステップと、
前記第2配向性超伝導体層の一部の上に第2導電細条を堆積するステップであって、前記第2導電細条の下側における前記第2配向性超伝導体層の第2保護領域、及び前記第2保護領域に隣接する前記第2配向性超伝導体層の第2露出領域を画定するステップと、
前記第2導電細条を前記第1導電細条に電気的に接続するステップと、
を備える、方法。 - さらに、前記第1及び第2の導電細条は、それぞれバイファイラ巻線にして設けるステップを備える、請求項10記載の方法。
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US14/077,901 | 2013-11-12 | ||
US14/077,901 US9947441B2 (en) | 2013-11-12 | 2013-11-12 | Integrated superconductor device and method of fabrication |
PCT/US2014/064739 WO2015116289A2 (en) | 2013-11-12 | 2014-11-10 | Integrated superconductor device and method of fabrication |
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JP2017500756A JP2017500756A (ja) | 2017-01-05 |
JP2017500756A5 JP2017500756A5 (ja) | 2018-11-01 |
JP6507173B2 true JP6507173B2 (ja) | 2019-05-08 |
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US (2) | US9947441B2 (ja) |
EP (1) | EP3069381A4 (ja) |
JP (1) | JP6507173B2 (ja) |
KR (1) | KR20160084851A (ja) |
CN (1) | CN105849888B (ja) |
AU (1) | AU2014380148B2 (ja) |
TW (1) | TWI632709B (ja) |
WO (1) | WO2015116289A2 (ja) |
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US9850569B2 (en) | 2013-11-27 | 2017-12-26 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation for superconductor tape fabrication |
EP3358576A4 (en) | 2015-10-01 | 2019-05-15 | Furukawa Electric Co., Ltd. | CONNECTION STRUCTURE FOR SUPERCONDUCTING MACHINE WIRE |
GB201705214D0 (en) | 2017-03-31 | 2017-05-17 | Tokamak Energy Ltd | Quench detection in superconducting magnets |
US11031774B2 (en) * | 2018-01-19 | 2021-06-08 | Varian Semiconductor Equipment Associates, Inc. | Superconducting fault current limiter having improved energy handling |
CN114175288A (zh) * | 2019-07-29 | 2022-03-11 | 微软技术许可有限责任公司 | 耦合到超导体的半导体纳米线的制造方法 |
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WO2015116289A2 (en) | 2015-08-06 |
TW201526317A (zh) | 2015-07-01 |
TWI632709B (zh) | 2018-08-11 |
US20190035518A1 (en) | 2019-01-31 |
US9947441B2 (en) | 2018-04-17 |
KR20160084851A (ko) | 2016-07-14 |
US20150348682A1 (en) | 2015-12-03 |
US10290399B2 (en) | 2019-05-14 |
AU2014380148B2 (en) | 2019-03-28 |
EP3069381A2 (en) | 2016-09-21 |
JP2017500756A (ja) | 2017-01-05 |
CN105849888A (zh) | 2016-08-10 |
CN105849888B (zh) | 2018-12-04 |
AU2014380148A1 (en) | 2016-06-16 |
WO2015116289A3 (en) | 2015-10-01 |
EP3069381A4 (en) | 2017-06-28 |
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