JP6505027B2 - 試料の離脱方法およびプラズマ処理装置 - Google Patents

試料の離脱方法およびプラズマ処理装置 Download PDF

Info

Publication number
JP6505027B2
JP6505027B2 JP2016000029A JP2016000029A JP6505027B2 JP 6505027 B2 JP6505027 B2 JP 6505027B2 JP 2016000029 A JP2016000029 A JP 2016000029A JP 2016000029 A JP2016000029 A JP 2016000029A JP 6505027 B2 JP6505027 B2 JP 6505027B2
Authority
JP
Japan
Prior art keywords
sample
plasma
voltage
wafer
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016000029A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017123354A5 (enExample
JP2017123354A (ja
Inventor
正貴 石黒
正貴 石黒
角屋　誠浩
誠浩 角屋
茂 白米
茂 白米
田村　智行
智行 田村
和幸 池永
和幸 池永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2016000029A priority Critical patent/JP6505027B2/ja
Priority to KR1020160098402A priority patent/KR102001018B1/ko
Priority to TW105126383A priority patent/TWI612611B/zh
Priority to US15/248,205 priority patent/US10490412B2/en
Publication of JP2017123354A publication Critical patent/JP2017123354A/ja
Publication of JP2017123354A5 publication Critical patent/JP2017123354A5/ja
Application granted granted Critical
Publication of JP6505027B2 publication Critical patent/JP6505027B2/ja
Priority to US16/660,938 priority patent/US11107694B2/en
Priority to US17/386,892 priority patent/US11664233B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2016000029A 2016-01-04 2016-01-04 試料の離脱方法およびプラズマ処理装置 Active JP6505027B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2016000029A JP6505027B2 (ja) 2016-01-04 2016-01-04 試料の離脱方法およびプラズマ処理装置
KR1020160098402A KR102001018B1 (ko) 2016-01-04 2016-08-02 시료의 이탈 방법 및 플라스마 처리 장치
TW105126383A TWI612611B (zh) 2016-01-04 2016-08-18 樣品的脫離方法及電漿處理裝置
US15/248,205 US10490412B2 (en) 2016-01-04 2016-08-26 Method for releasing sample and plasma processing apparatus using same
US16/660,938 US11107694B2 (en) 2016-01-04 2019-10-23 Method for releasing sample and plasma processing apparatus using same
US17/386,892 US11664233B2 (en) 2016-01-04 2021-07-28 Method for releasing sample and plasma processing apparatus using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016000029A JP6505027B2 (ja) 2016-01-04 2016-01-04 試料の離脱方法およびプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2017123354A JP2017123354A (ja) 2017-07-13
JP2017123354A5 JP2017123354A5 (enExample) 2018-05-31
JP6505027B2 true JP6505027B2 (ja) 2019-04-24

Family

ID=59235797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016000029A Active JP6505027B2 (ja) 2016-01-04 2016-01-04 試料の離脱方法およびプラズマ処理装置

Country Status (4)

Country Link
US (3) US10490412B2 (enExample)
JP (1) JP6505027B2 (enExample)
KR (1) KR102001018B1 (enExample)
TW (1) TWI612611B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6811144B2 (ja) * 2017-05-30 2021-01-13 東京エレクトロン株式会社 プラズマ処理装置の静電チャックを運用する方法
CN108550538B (zh) * 2018-05-21 2021-01-08 浙江兰达光电科技有限公司 一种半导体芯片生产工艺
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
JP7039096B2 (ja) * 2020-03-31 2022-03-22 アトナープ株式会社 ガス分析装置、プロセスモニタリング装置、ガス分析装置の制御方法
JP7519877B2 (ja) * 2020-10-29 2024-07-22 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7578360B2 (ja) * 2020-12-22 2024-11-06 東京エレクトロン株式会社 除電方法及びプラズマ処理システム

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
KR19980024679U (ko) 1996-10-30 1998-07-25 홍성기 광고용 녹화 카셋테이프
JP2978470B2 (ja) * 1998-04-08 1999-11-15 株式会社日立製作所 静電吸着装置および被吸着物離脱方法
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6236555B1 (en) * 1999-04-19 2001-05-22 Applied Materials, Inc. Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
JP2002134489A (ja) * 2000-10-25 2002-05-10 Tokyo Electron Ltd 基板除電方法、気相堆積装置、半導体装置の製造方法
US6898064B1 (en) * 2001-08-29 2005-05-24 Lsi Logic Corporation System and method for optimizing the electrostatic removal of a workpiece from a chuck
JP2004047511A (ja) * 2002-07-08 2004-02-12 Tokyo Electron Ltd 離脱方法、処理方法、静電吸着装置および処理装置
JP4336124B2 (ja) * 2003-03-10 2009-09-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
JP2009054746A (ja) * 2007-08-27 2009-03-12 Nikon Corp 静電チャック及び静電チャック方法
US7813103B2 (en) * 2007-10-11 2010-10-12 Applied Materials, Inc. Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
JP2009141069A (ja) * 2007-12-05 2009-06-25 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2010040822A (ja) * 2008-08-06 2010-02-18 Tokyo Electron Ltd 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体
JP5501375B2 (ja) * 2009-01-11 2014-05-21 アプライド マテリアルズ インコーポレイテッド ロボットおよびロボットの電気エンドエフェクタに電気的に接続するシステム、装置、および方法
CN101872733B (zh) * 2009-04-24 2012-06-27 中微半导体设备(上海)有限公司 感测和移除被加工半导体工艺件的残余电荷的系统和方法
US8797705B2 (en) * 2009-09-10 2014-08-05 Lam Research Corporation Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
JP5875775B2 (ja) * 2011-03-30 2016-03-02 東京エレクトロン株式会社 基板除去方法及び記憶媒体
JP6013740B2 (ja) * 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
JP6132497B2 (ja) * 2012-09-12 2017-05-24 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置

Also Published As

Publication number Publication date
US20170194157A1 (en) 2017-07-06
US20210358758A1 (en) 2021-11-18
TWI612611B (zh) 2018-01-21
US11107694B2 (en) 2021-08-31
US10490412B2 (en) 2019-11-26
KR20170081555A (ko) 2017-07-12
US20200058511A1 (en) 2020-02-20
US11664233B2 (en) 2023-05-30
JP2017123354A (ja) 2017-07-13
KR102001018B1 (ko) 2019-07-17
TW201725651A (zh) 2017-07-16

Similar Documents

Publication Publication Date Title
JP6505027B2 (ja) 試料の離脱方法およびプラズマ処理装置
US20160027615A1 (en) Plasma processing apparatus
US10975468B2 (en) Method of cleaning plasma processing apparatus
JP2004047511A (ja) 離脱方法、処理方法、静電吸着装置および処理装置
JP6518505B2 (ja) プラズマ処理装置およびプラズマ処理方法
CN102246289B (zh) 从静电夹盘对晶片解除箝制
CN107408503B (zh) 基板处理装置和基板处理方法
US9253862B2 (en) Plasma processing method and plasma processing apparatus
US7892445B1 (en) Wafer electrical discharge control using argon free dechucking gas
JP2010040822A (ja) 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体
CN108735624B (zh) 晶片的搬出方法
JP6708358B2 (ja) プラズマ処理装置及び試料の離脱方法
TW561794B (en) Dechucking with N2/O2 plasma
JP4642809B2 (ja) プラズマ処理方法及びプラズマ処理装置
CN101711425A (zh) 在晶片解除卡紧期间减少晶片上颗粒数量的设备和方法
CN107546091A (zh) 半导体器件的制造方法
JP2007048986A (ja) プラズマ処理装置およびプラズマ処理方法
JP2002203837A (ja) プラズマ処理方法および装置並びに半導体装置の製造方法
JP4800432B2 (ja) プラズマ処理装置およびプラズマ処理方法
US7335601B2 (en) Method of processing an object and method of controlling processing apparatus to prevent contamination of the object
JPH11330217A (ja) 静電チャックプレート表面からの基板離脱方法
JP7515327B2 (ja) 基板離脱方法及びプラズマ処理装置
JP2004228488A (ja) 基板搬送方法
KR101087140B1 (ko) 플라즈마 처리 장치의 척킹/디척킹 장치 및 척킹/디척킹 방법
JP6648236B2 (ja) プラズマ処理装置およびプラズマ処理方法

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180409

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180409

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190226

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190326

R150 Certificate of patent or registration of utility model

Ref document number: 6505027

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350