TWI612611B - 樣品的脫離方法及電漿處理裝置 - Google Patents

樣品的脫離方法及電漿處理裝置 Download PDF

Info

Publication number
TWI612611B
TWI612611B TW105126383A TW105126383A TWI612611B TW I612611 B TWI612611 B TW I612611B TW 105126383 A TW105126383 A TW 105126383A TW 105126383 A TW105126383 A TW 105126383A TW I612611 B TWI612611 B TW I612611B
Authority
TW
Taiwan
Prior art keywords
sample
plasma
voltage
potential
wafer
Prior art date
Application number
TW105126383A
Other languages
English (en)
Chinese (zh)
Other versions
TW201725651A (zh
Inventor
Masaki Ishiguro
石黒正貴
Masahiro Sumiya
角屋誠浩
Shigeru Shirayone
白米茂
Tomoyuki Tamura
田村智行
Kazuyuki Ikenaga
池永和幸
Original Assignee
Hitachi High-Technologies Corporation
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High-Technologies Corporation, 日立全球先端科技股份有限公司 filed Critical Hitachi High-Technologies Corporation
Publication of TW201725651A publication Critical patent/TW201725651A/zh
Application granted granted Critical
Publication of TWI612611B publication Critical patent/TWI612611B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW105126383A 2016-01-04 2016-08-18 樣品的脫離方法及電漿處理裝置 TWI612611B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016000029A JP6505027B2 (ja) 2016-01-04 2016-01-04 試料の離脱方法およびプラズマ処理装置
JP2016-000029 2016-01-04

Publications (2)

Publication Number Publication Date
TW201725651A TW201725651A (zh) 2017-07-16
TWI612611B true TWI612611B (zh) 2018-01-21

Family

ID=59235797

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105126383A TWI612611B (zh) 2016-01-04 2016-08-18 樣品的脫離方法及電漿處理裝置

Country Status (4)

Country Link
US (3) US10490412B2 (enExample)
JP (1) JP6505027B2 (enExample)
KR (1) KR102001018B1 (enExample)
TW (1) TWI612611B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6811144B2 (ja) * 2017-05-30 2021-01-13 東京エレクトロン株式会社 プラズマ処理装置の静電チャックを運用する方法
CN108550538B (zh) * 2018-05-21 2021-01-08 浙江兰达光电科技有限公司 一种半导体芯片生产工艺
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
EP4132228A4 (en) * 2020-03-31 2024-05-15 Atonarp Inc. PLASMA GENERATION DEVICE
JP7519877B2 (ja) * 2020-10-29 2024-07-22 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7578360B2 (ja) * 2020-12-22 2024-11-06 東京エレクトロン株式会社 除電方法及びプラズマ処理システム
WO2026042278A1 (ja) * 2024-08-23 2026-02-26 株式会社日立ハイテク 試料離脱方法およびプラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120250214A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Substrate removing method and storage medium

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
KR19980024679U (ko) 1996-10-30 1998-07-25 홍성기 광고용 녹화 카셋테이프
JP2978470B2 (ja) * 1998-04-08 1999-11-15 株式会社日立製作所 静電吸着装置および被吸着物離脱方法
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6236555B1 (en) * 1999-04-19 2001-05-22 Applied Materials, Inc. Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
JP2002134489A (ja) * 2000-10-25 2002-05-10 Tokyo Electron Ltd 基板除電方法、気相堆積装置、半導体装置の製造方法
US6898064B1 (en) * 2001-08-29 2005-05-24 Lsi Logic Corporation System and method for optimizing the electrostatic removal of a workpiece from a chuck
JP2004047511A (ja) * 2002-07-08 2004-02-12 Tokyo Electron Ltd 離脱方法、処理方法、静電吸着装置および処理装置
JP4336124B2 (ja) * 2003-03-10 2009-09-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
JP2009054746A (ja) * 2007-08-27 2009-03-12 Nikon Corp 静電チャック及び静電チャック方法
US7813103B2 (en) * 2007-10-11 2010-10-12 Applied Materials, Inc. Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
JP2009141069A (ja) * 2007-12-05 2009-06-25 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2010040822A (ja) * 2008-08-06 2010-02-18 Tokyo Electron Ltd 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体
US8264187B2 (en) * 2009-01-11 2012-09-11 Applied Materials, Inc. Systems, apparatus and methods for making an electrical connection
CN101872733B (zh) * 2009-04-24 2012-06-27 中微半导体设备(上海)有限公司 感测和移除被加工半导体工艺件的残余电荷的系统和方法
US8797705B2 (en) * 2009-09-10 2014-08-05 Lam Research Corporation Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
JP6013740B2 (ja) * 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
JP6132497B2 (ja) * 2012-09-12 2017-05-24 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120250214A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Substrate removing method and storage medium

Also Published As

Publication number Publication date
US11664233B2 (en) 2023-05-30
KR102001018B1 (ko) 2019-07-17
US10490412B2 (en) 2019-11-26
TW201725651A (zh) 2017-07-16
JP2017123354A (ja) 2017-07-13
US20200058511A1 (en) 2020-02-20
US11107694B2 (en) 2021-08-31
KR20170081555A (ko) 2017-07-12
US20210358758A1 (en) 2021-11-18
JP6505027B2 (ja) 2019-04-24
US20170194157A1 (en) 2017-07-06

Similar Documents

Publication Publication Date Title
TWI612611B (zh) 樣品的脫離方法及電漿處理裝置
US12112925B2 (en) Plasma processing apparatus
CN100530536C (zh) 承载晶圆的放电系统、静电吸附器与集成电路的制造方法
JP6518505B2 (ja) プラズマ処理装置およびプラズマ処理方法
TWI660422B (zh) 電漿處理裝置及樣品之脫離方法
JP2004047511A (ja) 離脱方法、処理方法、静電吸着装置および処理装置
CN102208322A (zh) 等离子体处理装置和半导体装置的制造方法
CN107408503B (zh) 基板处理装置和基板处理方法
CN110323119A (zh) 等离子体处理装置和被处理体的输送方法
TW201624518A (zh) 電漿處理裝置
JP4642809B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP2007165917A (ja) 被吸着物の処理方法
CN114429896A (zh) 等离子体处理方法和等离子体处理装置
JP7515327B2 (ja) 基板離脱方法及びプラズマ処理装置
JP3733448B2 (ja) プラズマ処理方法および装置並びに基板脱離方法及び印加電圧の制御装置
JP2002222850A (ja) 静電チャックにおける被吸着物の離脱方法
JP7527194B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP2004087576A (ja) 真空処理装置
JP6648236B2 (ja) プラズマ処理装置およびプラズマ処理方法
WO2026042278A1 (ja) 試料離脱方法およびプラズマ処理装置