JP6503543B2 - 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置 - Google Patents

遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置 Download PDF

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JP6503543B2
JP6503543B2 JP2015096023A JP2015096023A JP6503543B2 JP 6503543 B2 JP6503543 B2 JP 6503543B2 JP 2015096023 A JP2015096023 A JP 2015096023A JP 2015096023 A JP2015096023 A JP 2015096023A JP 6503543 B2 JP6503543 B2 JP 6503543B2
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transition metal
gas
silicon
film
source gas
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JP2016211038A5 (enExample
JP2016211038A (ja
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直也 岡田
直也 岡田
紀行 内田
紀行 内田
多田　哲也
哲也 多田
金山　敏彦
敏彦 金山
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National Institute of Advanced Industrial Science and Technology AIST
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  • Chemical Vapour Deposition (AREA)
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JP2015096023A 2015-05-08 2015-05-08 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置 Active JP6503543B2 (ja)

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JP2016211038A5 JP2016211038A5 (enExample) 2018-06-21
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JP6601365B2 (ja) 2016-07-27 2019-11-06 株式会社デンソー 制御システム
WO2019093207A1 (ja) * 2017-11-09 2019-05-16 国立研究開発法人産業技術総合研究所 導電性積層体及び電子素子
WO2019190795A1 (en) * 2018-03-26 2019-10-03 Lam Research Corporation Intermediate layer for metal interconnect layer
CN113718227B (zh) * 2020-05-25 2022-07-26 中国科学院金属研究所 一类二维层状三元化合物及其制备方法
CN116040636B (zh) * 2023-01-18 2025-02-14 湖南大学 一种Cr5Si3非层状二维材料及其制备和应用

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JPS60178622A (ja) * 1984-02-27 1985-09-12 Fujitsu Ltd 半導体装置の製造方法
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
US4966869A (en) * 1990-05-04 1990-10-30 Spectrum Cvd, Inc. Tungsten disilicide CVD
JP3154145B2 (ja) * 1992-10-28 2001-04-09 ソニー株式会社 Ｃｖｄ装置及びその装置を使用する成膜方法

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