JP6501618B2 - はんだ被膜形成装置、はんだ被膜形成方法および半導体装置 - Google Patents

はんだ被膜形成装置、はんだ被膜形成方法および半導体装置 Download PDF

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Publication number
JP6501618B2
JP6501618B2 JP2015108711A JP2015108711A JP6501618B2 JP 6501618 B2 JP6501618 B2 JP 6501618B2 JP 2015108711 A JP2015108711 A JP 2015108711A JP 2015108711 A JP2015108711 A JP 2015108711A JP 6501618 B2 JP6501618 B2 JP 6501618B2
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Prior art keywords
molten solder
solder
semiconductor device
liquid level
lead
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JP2015108711A
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Japanese (ja)
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JP2016225407A (ja
JP2016225407A5 (https=
Inventor
彰一 味岡
彰一 味岡
佐藤　耕平
耕平 佐藤
有平 岸本
有平 岸本
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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  • Lead Frames For Integrated Circuits (AREA)
  • Molten Solder (AREA)
JP2015108711A 2015-05-28 2015-05-28 はんだ被膜形成装置、はんだ被膜形成方法および半導体装置 Expired - Fee Related JP6501618B2 (ja)

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JP2015108711A JP6501618B2 (ja) 2015-05-28 2015-05-28 はんだ被膜形成装置、はんだ被膜形成方法および半導体装置

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JP2015108711A JP6501618B2 (ja) 2015-05-28 2015-05-28 はんだ被膜形成装置、はんだ被膜形成方法および半導体装置

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JP2016225407A JP2016225407A (ja) 2016-12-28
JP2016225407A5 JP2016225407A5 (https=) 2018-04-05
JP6501618B2 true JP6501618B2 (ja) 2019-04-17

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JP2015108711A Expired - Fee Related JP6501618B2 (ja) 2015-05-28 2015-05-28 はんだ被膜形成装置、はんだ被膜形成方法および半導体装置

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117226210A (zh) * 2023-09-25 2023-12-15 湖南省华芯医疗器械有限公司 一种高密度引脚的焊接方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155993A (ja) * 1984-08-27 1986-03-20 富士通株式会社 部品の予備半田付け方法
JPS61189869A (ja) * 1985-02-18 1986-08-23 Tamura Seisakusho Co Ltd はんだ付け装置
JPH0286152A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd はんだディップ装置
JPH02277753A (ja) * 1989-04-20 1990-11-14 Senju Metal Ind Co Ltd はんだメッキ方法およびその装置
JPH04196572A (ja) * 1990-11-28 1992-07-16 Seiko Epson Corp 半導体装置のはんだ被覆方法
JPH05347373A (ja) * 1992-06-12 1993-12-27 Seiko Epson Corp 半導体素子実装構造とその半田付け方法

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