JP6496425B2 - 分析物検出装置、装置、及び方法 - Google Patents

分析物検出装置、装置、及び方法 Download PDF

Info

Publication number
JP6496425B2
JP6496425B2 JP2017556935A JP2017556935A JP6496425B2 JP 6496425 B2 JP6496425 B2 JP 6496425B2 JP 2017556935 A JP2017556935 A JP 2017556935A JP 2017556935 A JP2017556935 A JP 2017556935A JP 6496425 B2 JP6496425 B2 JP 6496425B2
Authority
JP
Japan
Prior art keywords
electric field
field generating
sel
dielectric layer
generating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017556935A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018515767A (ja
Inventor
バーセロ，スティーヴン
ゲー，ニン
リー，ジーヨン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of JP2018515767A publication Critical patent/JP2018515767A/ja
Application granted granted Critical
Publication of JP6496425B2 publication Critical patent/JP6496425B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N2021/6482—Sample cells, cuvettes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/651—Cuvettes therefore

Landscapes

  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2017556935A 2015-07-29 2015-07-29 分析物検出装置、装置、及び方法 Expired - Fee Related JP6496425B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2015/042627 WO2017019057A1 (en) 2015-07-29 2015-07-29 Surface enhanced luminescence electric field generating base

Publications (2)

Publication Number Publication Date
JP2018515767A JP2018515767A (ja) 2018-06-14
JP6496425B2 true JP6496425B2 (ja) 2019-04-03

Family

ID=57885218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017556935A Expired - Fee Related JP6496425B2 (ja) 2015-07-29 2015-07-29 分析物検出装置、装置、及び方法

Country Status (7)

Country Link
US (1) US10444151B2 (zh)
EP (1) EP3271704B1 (zh)
JP (1) JP6496425B2 (zh)
KR (1) KR102031608B1 (zh)
CN (1) CN107567583B (zh)
TW (1) TWI615607B (zh)
WO (1) WO2017019057A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6063604B2 (ja) * 2013-03-14 2017-01-18 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 物質を検出するための装置及び該装置を製造する方法
JP7289066B2 (ja) * 2018-08-28 2023-06-09 パナソニックＩｐマネジメント株式会社 センサ基板及びその製造方法
CN111830004A (zh) * 2019-04-18 2020-10-27 中国科学院微电子研究所 一种检测拉曼信号的方法
CN114002515B (zh) * 2021-12-31 2022-04-05 南京高华科技股份有限公司 电场传感器及其制备方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06167443A (ja) * 1992-10-23 1994-06-14 Olympus Optical Co Ltd 表面プラズモン共鳴を利用した測定装置
US5554552A (en) * 1995-04-03 1996-09-10 Taiwan Semiconductor Manufacturing Company PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof
JPH09257702A (ja) * 1996-03-21 1997-10-03 Toto Ltd 表面プラズモン共鳴センサ装置
JP3693750B2 (ja) * 1996-05-15 2005-09-07 富士写真フイルム株式会社 電気泳動センサー
US20020151041A1 (en) 2001-03-15 2002-10-17 Kreimer David I. Enhancing surfaces for analyte detection
US6970239B2 (en) * 2002-06-12 2005-11-29 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
JP2005077210A (ja) 2003-08-29 2005-03-24 National Institute For Materials Science 生体分子検出素子及びそれを用いた核酸解析方法
JP2006138846A (ja) * 2004-10-14 2006-06-01 Toshiba Corp 核酸検出センサ、核酸検出チップ及び核酸検出装置
JP4569346B2 (ja) * 2005-03-29 2010-10-27 カシオ計算機株式会社 生体高分子分析方法
JP4353958B2 (ja) * 2005-09-15 2009-10-28 株式会社日立製作所 Ｄｎａ計測装置、及びｄｎａ計測方法
CN101154666B (zh) 2006-09-28 2010-06-09 中芯国际集成电路制造(上海)有限公司 半导体存储器件及其制造方法
JP2008164584A (ja) * 2006-12-08 2008-07-17 Fujifilm Corp ラマン分光装置、及びこれを用いたラマン分光方法
CN100511714C (zh) 2007-09-04 2009-07-08 南京大学 基于锗硅异质纳米结构的非挥发浮栅存储器的制备方法
CN101383378A (zh) 2007-09-05 2009-03-11 中国科学院微电子研究所 多层纳米晶浮栅结构的非挥发性存储器及其制备方法
US20090166222A1 (en) 2007-09-07 2009-07-02 Northwestern University Electrical nanotraps for spectroscopically characterizing biomolecules within
CN101388415A (zh) 2007-09-12 2009-03-18 上海宏力半导体制造有限公司 一种非易失性存储器及其制作方法
US8344750B2 (en) * 2008-03-25 2013-01-01 Alcatel Lucent Surface-plasmon detector based on a field-effect transistor
US8436289B1 (en) * 2008-06-09 2013-05-07 Spansion Llc System and method for detecting particles with a semiconductor device
JP5467312B2 (ja) 2008-06-24 2014-04-09 独立行政法人物質・材料研究機構 バイオセンサ、バイオセンサを用いた生体物質の検出方法、及びそのキット
US8072770B2 (en) * 2008-10-14 2011-12-06 Texas Instruments Incorporated Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame
EP2352999A4 (en) 2008-10-15 2012-12-26 Univ Cornell EXTENDED ON-CHIP-SERS-BASED BIOMOLECULAR PROOF PROCEDURE BASED ON ELECTRO-KINETIC ACTIVE MICROWAVES
US8223331B2 (en) 2009-06-19 2012-07-17 Hewlett-Packard Development Company, L.P. Signal-amplification device for surface enhanced raman spectroscopy
EP2452171A1 (en) 2009-07-08 2012-05-16 Hewlett-Packard Development Company, L.P. Light amplifying devices for surface enhanced raman spectroscopy
CN102130132B (zh) * 2010-01-18 2013-03-13 上海华虹Nec电子有限公司 Eeprom器件及其制造方法
EP2372348A1 (en) 2010-03-22 2011-10-05 Imec Methods and systems for surface enhanced optical detection
JP4962599B2 (ja) * 2010-06-14 2012-06-27 大日本印刷株式会社 電界効果トランジスタ型バイオセンサ
JP2010204126A (ja) * 2010-06-23 2010-09-16 Casio Computer Co Ltd 生体高分子分析支援装置
US8390805B2 (en) * 2010-07-29 2013-03-05 Hewlett-Packard Development Company, L.P. Surface enhanced raman spectroscopy system
JP5488372B2 (ja) 2010-09-28 2014-05-14 大日本印刷株式会社 バイオセンサ
US8593629B2 (en) 2011-02-17 2013-11-26 Hewlett-Packard Development Company, L.P. Apparatus for performing SERS
US9588048B2 (en) 2011-05-20 2017-03-07 Hewlett-Packard Development Company, L.P. Surface enhanced raman spectroscopy sensor, system and method of sensing
JP5392344B2 (ja) * 2011-12-09 2014-01-22 大日本印刷株式会社 電界効果トランジスタ型バイオセンサ
US20130196449A1 (en) 2012-01-17 2013-08-01 Hewlett-Packard Development Company, L.P. Electrically driven devices for surface enhanced raman spectroscopy
JP2015505610A (ja) 2012-01-19 2015-02-23 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 分子検出装置
TWI490487B (zh) 2012-10-25 2015-07-01 Academia Sinica 電極裝置、感測裝置、及其使用方法
TWI500921B (zh) 2013-01-14 2015-09-21 Ind Tech Res Inst 光學感測晶片
US9134249B2 (en) 2013-01-25 2015-09-15 Hewlett-Packard Development Company, L.P. Electric field generating apparatus for performing spectroscopy
US9915614B2 (en) 2013-04-26 2018-03-13 Academia Sinica Microfluidic systems and devices for molecular capture, manipulation, and analysis

Also Published As

Publication number Publication date
KR20170130607A (ko) 2017-11-28
EP3271704A4 (en) 2018-09-19
US10444151B2 (en) 2019-10-15
EP3271704A1 (en) 2018-01-24
TW201712320A (en) 2017-04-01
TWI615607B (zh) 2018-02-21
WO2017019057A1 (en) 2017-02-02
JP2018515767A (ja) 2018-06-14
EP3271704B1 (en) 2020-09-09
CN107567583A (zh) 2018-01-09
KR102031608B1 (ko) 2019-10-14
CN107567583B (zh) 2020-09-22
US20180143136A1 (en) 2018-05-24

Similar Documents

Publication Publication Date Title
JP6496425B2 (ja) 分析物検出装置、装置、及び方法
Jeong et al. High-yield functional molecular electronic devices
US9219166B2 (en) Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same
US9134270B2 (en) Amorphous thin film for sensing
Almeida et al. Charge trapping defects in CdSe nanocrystal quantum dots
Bergren et al. Analytical chemistry in molecular electronics
Lu et al. A facile integration of zero-(I–III–VI quantum dots) and one-(single SnO2 nanowire) dimensional nanomaterials: fabrication of a nanocomposite photodetector with ultrahigh gain and wide spectral response
JP5674220B2 (ja) ナノデバイス及びその製造方法
Tian et al. Electrochemically assisted fabrication of metal atomic wires and molecular junctions by MCBJ and STM‐BJ methods
Lee et al. DNA-base guanine as hydrogen getter and charge-trapping layer embedded in oxide dielectrics for inorganic and organic field-effect transistors
Gupta et al. Covalent assembly of gold nanoparticles for nonvolatile memory applications
WO2009087623A1 (en) Electric nanodevice and method of manufacturing same
JP2008536103A (ja) 静電的に制御された原子的な規模の導電性デバイス
Suresh et al. Hierarchically built gold nanoparticle supercluster arrays as charge storage centers for enhancing the performance of flash memory devices
Olmedo et al. Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes
US10175222B2 (en) Nanopore structure, ionic device using nanopore structure and method of manufacturing nanomembrane structure
Cramer et al. Charge density increase in submonolayer organic field-effect transistors
Schindler et al. Electronic excitations in the course of the reaction of H with coinage and noble metal surfaces: A comparison
US11243178B2 (en) Apparatus for electrodeless measurement of electron mobility in nano material, apparatus for electrodeless measurement of hole mobility in nano material, method for electrodeless measurement of electron mobility in nano material, and method for electrodeless measurement of hole mobility in nano material
Huang et al. Silicon Nanowire Charge‐Trap Memory Incorporating Self‐Assembled Iron Oxide Quantum Dots
Pregl Fabrication and characterization of a silicon nanowire based Schottky-barrier field effect transistor platform for functional electronics and biosensor applications
Gaydamachenko et al. A Coulomb Blockade in a Nanostructure Based on Single Intramolecular Charge Center
JP2011035073A (ja) 半導体記憶素子の製造方法
JPWO2019168124A1 (ja) 単分子トランジスタ
CN108474785A (zh) 使用氮化钛作为反电极

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190121

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190214

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190308

R150 Certificate of patent or registration of utility model

Ref document number: 6496425

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees