JP6492980B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6492980B2
JP6492980B2 JP2015111772A JP2015111772A JP6492980B2 JP 6492980 B2 JP6492980 B2 JP 6492980B2 JP 2015111772 A JP2015111772 A JP 2015111772A JP 2015111772 A JP2015111772 A JP 2015111772A JP 6492980 B2 JP6492980 B2 JP 6492980B2
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JP
Japan
Prior art keywords
semiconductor wafer
groove
semiconductor
semiconductor device
front surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2015111772A
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English (en)
Japanese (ja)
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JP2016225511A (ja
Inventor
皆澤　宏
宏 皆澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
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Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2015111772A priority Critical patent/JP6492980B2/ja
Priority to CN201610304722.5A priority patent/CN106206251A/zh
Publication of JP2016225511A publication Critical patent/JP2016225511A/ja
Application granted granted Critical
Publication of JP6492980B2 publication Critical patent/JP6492980B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
JP2015111772A 2015-06-01 2015-06-01 半導体装置の製造方法 Expired - Fee Related JP6492980B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015111772A JP6492980B2 (ja) 2015-06-01 2015-06-01 半導体装置の製造方法
CN201610304722.5A CN106206251A (zh) 2015-06-01 2016-05-10 半导体装置及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015111772A JP6492980B2 (ja) 2015-06-01 2015-06-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2016225511A JP2016225511A (ja) 2016-12-28
JP6492980B2 true JP6492980B2 (ja) 2019-04-03

Family

ID=57453393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015111772A Expired - Fee Related JP6492980B2 (ja) 2015-06-01 2015-06-01 半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JP6492980B2 (zh)
CN (1) CN106206251A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017102127B4 (de) * 2017-02-03 2023-03-09 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen unter Verwendung einer Epitaxie und Halbleitervorrichtungen mit einer lateralen Struktur
JP7313968B2 (ja) * 2019-08-15 2023-07-25 株式会社ディスコ ウエーハの加工方法
CN115831736B (zh) * 2023-02-13 2023-05-05 成都万应微电子有限公司 一种半导体材料产品的切割方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332270A (ja) * 2002-05-15 2003-11-21 Renesas Technology Corp 半導体装置およびその製造方法
JP2005353856A (ja) * 2004-06-11 2005-12-22 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
CN106206251A (zh) 2016-12-07
JP2016225511A (ja) 2016-12-28

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