JP6487625B2 - マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 - Google Patents

マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 Download PDF

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JP6487625B2
JP6487625B2 JP2014050827A JP2014050827A JP6487625B2 JP 6487625 B2 JP6487625 B2 JP 6487625B2 JP 2014050827 A JP2014050827 A JP 2014050827A JP 2014050827 A JP2014050827 A JP 2014050827A JP 6487625 B2 JP6487625 B2 JP 6487625B2
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nanoparticle
nanoparticles
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JP2014183316A (ja
JP2014183316A5 (enExample
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ムンサブ・シム
ヌリ・オー
ヨウ・ジャイ
スージ・ナム
ピーター・トレフォナス
キショリ・デシュパンデ
ジェイク・ジュ
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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JP2014050827A 2013-03-15 2014-03-13 マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 Expired - Fee Related JP6487625B2 (ja)

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Application Number Priority Date Filing Date Title
US13/834,363 US8937294B2 (en) 2013-03-15 2013-03-15 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US13/834,363 2013-03-15

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JP2014183316A JP2014183316A (ja) 2014-09-29
JP2014183316A5 JP2014183316A5 (enExample) 2018-09-20
JP6487625B2 true JP6487625B2 (ja) 2019-03-20

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US (2) US8937294B2 (enExample)
EP (1) EP2778122B1 (enExample)
JP (1) JP6487625B2 (enExample)
KR (1) KR102212759B1 (enExample)
CN (1) CN104046360B (enExample)
TW (1) TWI543396B (enExample)

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US8937294B2 (en) * 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
WO2016149043A1 (en) 2015-03-13 2016-09-22 Dow Global Technologies Llc Nanostructure material methods and devices
EP3188260B1 (en) 2015-12-31 2020-02-12 Dow Global Technologies Llc Nanostructure material structures and methods
EP3397588A4 (en) * 2015-12-31 2019-08-07 Dow Global Technologies, LLC CONTINUOUS FLOW SYNTHESIS OF NANOSTRUCTURE MATERIALS
TWI751144B (zh) * 2016-03-24 2022-01-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
TWI744296B (zh) * 2016-03-24 2021-11-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
US10544042B2 (en) * 2017-01-17 2020-01-28 International Business Machines Corporation Nanoparticle structure and process for manufacture
CN110753734A (zh) * 2017-04-19 2020-02-04 耶路撒冷希伯来大学伊森姆研究发展有限公司 半导体纳米结构及应用
CN110544746B (zh) * 2018-05-29 2021-03-16 Tcl科技集团股份有限公司 发光二极管及其制备方法
JP7072169B2 (ja) * 2018-06-22 2022-05-20 スタンレー電気株式会社 ナノ粒子集合体とその製造方法
WO2020261347A1 (ja) * 2019-06-24 2020-12-30 シャープ株式会社 発光素子
CN110499489B (zh) * 2019-07-23 2021-06-01 电子科技大学 一种半导体/金属异质结纳米线阵列材料的制备工艺
CN111162187B (zh) * 2019-12-31 2022-07-05 广东聚华印刷显示技术有限公司 双异质结纳米棒及其制备方法及发光二极管
KR102875120B1 (ko) * 2021-05-11 2025-10-22 삼성디스플레이 주식회사 양자점 제조방법, 상기 제조방법으로 제조된 양자점, 상기 양자점을 포함하는 광학 부재 및 상기 양자점을 포함하는 전자 장치

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US20140264258A1 (en) 2014-09-18
TW201445767A (zh) 2014-12-01
CN104046360A (zh) 2014-09-17
TWI543396B (zh) 2016-07-21
EP2778122B1 (en) 2021-04-28
KR20140113588A (ko) 2014-09-24
JP2014183316A (ja) 2014-09-29
US8937294B2 (en) 2015-01-20
KR102212759B1 (ko) 2021-02-04
US20150364645A1 (en) 2015-12-17
CN104046360B (zh) 2017-09-12
EP2778122A1 (en) 2014-09-17

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