CN104046360B - 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 - Google Patents

多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 Download PDF

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CN104046360B
CN104046360B CN201410098121.4A CN201410098121A CN104046360B CN 104046360 B CN104046360 B CN 104046360B CN 201410098121 A CN201410098121 A CN 201410098121A CN 104046360 B CN104046360 B CN 104046360B
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end cap
semiconductor
nano particle
particle
nanometer
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CN104046360A (zh
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M·沈
N·吴
Y·翟
S·南
P·特雷福纳斯
K·德什潘德
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Dow Global Technologies LLC
University of Illinois System
DuPont Electronic Materials International LLC
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Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
University of Illinois System
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CN201410098121.4A 2013-03-15 2014-03-17 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 Expired - Fee Related CN104046360B (zh)

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US13/834,363 US8937294B2 (en) 2013-03-15 2013-03-15 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US13/834,363 2013-03-15

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US20180273844A1 (en) * 2015-12-31 2018-09-27 Dow Global Technologies Llc Continuous flow syntheses of nanostructure materials
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CN110499489B (zh) * 2019-07-23 2021-06-01 电子科技大学 一种半导体/金属异质结纳米线阵列材料的制备工艺
CN111162187B (zh) * 2019-12-31 2022-07-05 广东聚华印刷显示技术有限公司 双异质结纳米棒及其制备方法及发光二极管
KR102875120B1 (ko) * 2021-05-11 2025-10-22 삼성디스플레이 주식회사 양자점 제조방법, 상기 제조방법으로 제조된 양자점, 상기 양자점을 포함하는 광학 부재 및 상기 양자점을 포함하는 전자 장치

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TWI543396B (zh) 2016-07-21
US20150364645A1 (en) 2015-12-17
EP2778122A1 (en) 2014-09-17
US20140264258A1 (en) 2014-09-18
JP2014183316A (ja) 2014-09-29
TW201445767A (zh) 2014-12-01
KR20140113588A (ko) 2014-09-24
US10510924B2 (en) 2019-12-17
EP2778122B1 (en) 2021-04-28
JP6487625B2 (ja) 2019-03-20
US8937294B2 (en) 2015-01-20
KR102212759B1 (ko) 2021-02-04

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