CN104046360B - 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 - Google Patents

多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 Download PDF

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CN104046360B
CN104046360B CN201410098121.4A CN201410098121A CN104046360B CN 104046360 B CN104046360 B CN 104046360B CN 201410098121 A CN201410098121 A CN 201410098121A CN 104046360 B CN104046360 B CN 104046360B
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semiconductor
nano particle
particle
nanometer
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CN104046360A (zh
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M·沈
N·吴
Y·翟
S·南
P·特雷福纳斯
K·德什潘德
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Dow Global Technologies LLC
University of Illinois System
DuPont Electronic Materials International LLC
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Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
University of Illinois System
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CN201410098121.4A 2013-03-15 2014-03-17 多异质结纳米颗粒、其制备方法以及包含该纳米颗粒的制品 Expired - Fee Related CN104046360B (zh)

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Application Number Priority Date Filing Date Title
US13/834,363 US8937294B2 (en) 2013-03-15 2013-03-15 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US13/834,363 2013-03-15

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CN104046360A CN104046360A (zh) 2014-09-17
CN104046360B true CN104046360B (zh) 2017-09-12

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US (2) US8937294B2 (enExample)
EP (1) EP2778122B1 (enExample)
JP (1) JP6487625B2 (enExample)
KR (1) KR102212759B1 (enExample)
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US8937294B2 (en) * 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
WO2016149043A1 (en) 2015-03-13 2016-09-22 Dow Global Technologies Llc Nanostructure material methods and devices
JP7018021B2 (ja) * 2015-12-31 2022-02-09 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の連続フロー合成
EP3188260B1 (en) 2015-12-31 2020-02-12 Dow Global Technologies Llc Nanostructure material structures and methods
TWI744296B (zh) * 2016-03-24 2021-11-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
TWI751144B (zh) * 2016-03-24 2022-01-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
US10544042B2 (en) * 2017-01-17 2020-01-28 International Business Machines Corporation Nanoparticle structure and process for manufacture
WO2018193445A1 (en) 2017-04-19 2018-10-25 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Semiconductor nanostructures and applications
CN110544746B (zh) * 2018-05-29 2021-03-16 Tcl科技集团股份有限公司 发光二极管及其制备方法
JP7072169B2 (ja) * 2018-06-22 2022-05-20 スタンレー電気株式会社 ナノ粒子集合体とその製造方法
US12209214B2 (en) * 2019-06-24 2025-01-28 Sharp Kabushiki Kaisha Light-emitting element having a hole transport layer containing LaNiO.sub.3 for luminous efficiency
CN110499489B (zh) * 2019-07-23 2021-06-01 电子科技大学 一种半导体/金属异质结纳米线阵列材料的制备工艺
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US8937294B2 (en) 2015-01-20
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US20150364645A1 (en) 2015-12-17
TW201445767A (zh) 2014-12-01
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